CY7C1218H

Switching Characteristics Over the Operating Range [11, 12]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

166 MHz

133 MHz

 

Parameter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Description

 

 

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

tPOWER

 

VDD(Typical) to the First Access[13]

1

 

1

 

ms

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

6.0

 

7.5

 

ns

tCH

 

Clock HIGH

2.5

 

3.0

 

ns

tCL

 

Clock LOW

2.5

 

3.0

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

tCO

 

Data Output Valid after CLK Rise

 

3.5

 

4.0

ns

tDOH

 

Data Output Hold after CLK Rise

1.5

 

1.5

 

ns

t

 

Clock to Low-Z[14, 15, 16]

0

 

0

 

ns

CLZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

 

Clock to High-Z[14, 15, 16]

 

3.5

 

4.0

ns

CHZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tOEV

 

 

 

LOW to Output Valid

 

3.5

 

4.5

ns

OE

 

 

tOELZ

 

 

 

LOW to Output Low-Z[14, 15, 16]

0

 

0

 

ns

OE

 

 

tOEHZ

 

 

 

HIGH to Output High-Z[14, 15, 16]

 

3.5

 

4.0

ns

OE

 

 

Set-up Times

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Set-up before CLK Rise

1.5

 

1.5

 

ns

tADS

 

 

 

 

 

 

 

 

 

 

 

 

 

Set-up before CLK Rise

1.5

 

1.5

 

ns

ADSC,

ADSP

 

 

tADVS

 

 

 

 

 

Set-up before CLK Rise

1.5

 

1.5

 

ns

ADV

 

 

tWES

 

 

 

 

 

 

 

 

 

 

 

 

 

[A:D] Set-up before CLK Rise

1.5

 

1.5

 

ns

GW,

BWE,

BW

 

 

tDS

 

Data Input Set-up before CLK Rise

1.5

 

1.5

 

ns

tCES

 

Chip Enable Set-Up before CLK Rise

1.5

 

1.5

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold after CLK Rise

0.5

 

0.5

 

ns

tADH

 

 

 

 

 

 

 

 

 

 

 

Hold after CLK Rise

0.5

 

0.5

 

ns

ADSP,

ADSC

 

 

tADVH

 

 

 

 

Hold after CLK Rise

0.5

 

0.5

 

ns

ADV

 

 

tWEH

 

 

 

 

 

 

 

 

 

 

 

 

 

[A:D] Hold after CLK Rise

0.5

 

0.5

 

ns

GW,

BWE,

BW

 

 

tDH

 

Data Input Hold after CLK Rise

0.5

 

0.5

 

ns

tCEH

 

Chip Enable Hold after CLK Rise

0.5

 

0.5

 

ns

Notes:

11.Timing references level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.

12.Test conditions shown in (a) of AC Test Loads unless otherwise noted.

13.This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a Read or Write operation can be initiated.

14.tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

15.At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions.

16.This parameter is sampled and not 100% tested.

Document #: 38-05667 Rev. *B

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Cypress CY7C1218H manual Switching Characteristics Over the Operating Range 11
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CY7C1218H specifications

The Cypress CY7C1218H is a high-performance synchronous static random-access memory (SRAM) device designed to meet the demanding requirements of advanced memory applications. This SRAM boasts a density of 2 Mbits, making it suitable for a variety of uses, including telecommunications, industrial, and consumer electronics.

One of the main features of the CY7C1218H is its fast access time, which ranges from 10 ns to 15 ns, depending on the specific configuration. This high-speed access allows for efficient read/write operations and ensures that the memory can keep pace with the needs of high-speed processors and data buses. The device operates with a single 3.3V supply, enhancing its compatibility with modern digital circuits and reducing power consumption.

The CY7C1218H employs a synchronous interface that simplifies the control signaling process and increases data transfer rates. This synchronous nature means that the operation of the chip is synchronized with an external clock, facilitating faster and more reliable data transfer between the memory and the host system. This is particularly beneficial in high-performance applications where latency and throughput are critical.

In addition to its speed and efficiency, the CY7C1218H features a low standby power mode. This is an essential characteristic for battery-powered and energy-efficient systems, as it significantly reduces power consumption when the device is not actively in use. The SRAM design also includes a write protect feature, enhancing data integrity and security in sensitive applications.

The device is packaged in a 44-pin TSOP (Thin Small Outline Package) and has a compact footprint, making it suitable for space-constrained designs. The CY7C1218H uses advanced CMOS technology to support reliable performance and long data retention, ensuring that stored data remains intact even during power-down cycles.

Overall, the Cypress CY7C1218H represents a robust solution for engineers looking to integrate high-speed, low-power SRAM into their designs. Its blend of speed, reliability, and efficiency makes it an excellent choice for applications requiring fast access and secure data storage, making it a staple in various electronic systems across different industries.
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