CY7C1297H

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Descriptions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Name

I/O

Description

 

 

 

 

 

 

 

A0, A1, A

Input-

Address Inputs used to select one of the 64K address locations. Sampled at the rising edge

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

feed the 2-bit counter.

 

 

 

 

 

A,

 

 

 

B

Input-

Byte Write Select Inputs, active LOW. Qualified with

 

to conduct Byte Writes to the SRAM.

 

 

BW

BW

BWE

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

Sampled on the rising edge of CLK.

 

 

 

 

 

 

 

 

 

 

 

Input-

Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global

 

 

GW

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

Write is conducted (ALL bytes are written, regardless of the values on BW[A:B] and BWE).

 

 

 

 

 

 

 

 

 

 

 

Input-

Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be

 

 

BWE

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

asserted LOW to conduct a Byte Write.

 

 

CLK

Input-

Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock

burst counter when ADV is asserted LOW, during a burst operation.

 

 

 

1

 

 

 

Input-

Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

when a new external address is loaded.

 

 

CE2

Input-

Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE3 to select/deselect the device. CE2 is sampled only when a new external address is

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

loaded.

 

 

 

3

 

 

 

Input-

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE2 to select/deselect the device. CE3 is sampled only when a new external address is

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

loaded.

 

 

 

 

 

 

 

 

Input-

Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

input data pins. OE is masked during the first clock of a Read cycle when emerging from a

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

deselected state.

 

 

 

 

 

 

 

 

 

 

Input-

Advance Input signal, sampled on the rising edge of CLK. When asserted, it automatically

 

 

ADV

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

increments the address in a burst cycle.

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When

 

 

ADSP

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

asserted LOW, addresses presented to the device are captured in the address registers. A[1:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

recognized. ASDP is ignored when CE1 is deasserted HIGH

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When

 

 

ADSC

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

asserted LOW, addresses presented to the device are captured in the address registers. A[1:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

recognized.

 

 

ZZ

Input-

ZZ “Sleep” Input, active HIGH. When asserted HIGH places the device in a non-time-critical

 

 

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

“sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

left floating. ZZ pin has an internal pull-down.

 

 

DQs

I/O-

Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered

 

 

DQPA, DQPB

Synchronous

by the rising edge of CLK. As outputs, they deliver the data contained in the memory location

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

specified by the addresses presented during the previous clock rise of the Read cycle. The

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

When HIGH, DQs and DQP[A:B] are placed in a tri-state condition.

 

 

VDD

Power Supply

Power supply inputs to the core of the device.

 

 

VSS

Ground

Ground for the device.

 

 

VDDQ

I/O Power

Power supply for the I/O circuitry.

 

 

 

 

 

 

 

 

 

 

 

 

 

Supply

 

 

 

 

 

 

MODE

Input-

Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left

 

 

 

 

 

 

 

 

 

 

 

 

 

Static

floating selects interleaved burst sequence. This is a strap pin and should remain static during

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

device operation. Mode Pin has an internal pull-up.

 

 

NC

 

 

 

No Connects. Not Internally connected to the die. 2M, 4M, 9M, 18M, 72M, 144M, 288M, 576M

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

and 1G are address expansion pins and are not internally connected to the die.

Document #: 38-05669 Rev. *B

 

 

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Cypress CY7C1297H Pin Descriptions, Name Description, Power supply inputs to the core of the device, Ground for the device

CY7C1297H specifications

The Cypress CY7C1297H is a high-performance synchronous static random-access memory (SRAM) that offers an optimal solution for various memory applications, particularly in communication and networking devices. Designed as a part of the Cypress family of SRAMs, the CY7C1297H encompasses advanced features that significantly enhance its performance and efficiency.

One of the standout features of the CY7C1297H is its high density, providing 128 megabits of storage capacity. This ample memory size allows it to support a wide range of applications, especially in complex systems where large data buffers are crucial. The architecture is built on advanced CMOS technology, ensuring low power consumption and high speed. The device operates at frequencies up to 166 MHz, enabling fast data access and processing, which is vital for high-speed networking applications.

The CY7C1297H SRAM also supports synchronous interface, ensuring that data transfers are synchronized with clock cycles, thus eliminating delays associated with asynchronous memory types. This synchronous operation enhances the performance of high-speed systems by reducing cycle time and increasing throughput. The device utilizes a burst mode feature, allowing for sequential data access without the need for repeated address inputs, which further boosts efficiency during data retrieval.

Additionally, the CY7C1297H comes with an advanced write operation capability, including features such as byte-write and latch control, enabling partial updates and reducing system overhead. This flexibility is especially beneficial for applications requiring dynamic memory updates such as packet processing and buffering in sophisticated communication environments.

In terms of power management, the CY7C1297H is designed with low standby and active power consumption characteristics. This not only contributes to lower energy costs but also extends the lifespan of the device, making it suitable for battery-operated systems.

The package options for the CY7C1297H are diverse, allowing for easy integration into various designs. It is available in both leaded and lead-free versions, catering to various environmental and regulatory requirements.

In summary, the Cypress CY7C1297H SRAM is a high-density, high-speed memory solution that excels in synchronous operation, low power consumption, and advanced features such as burst mode access and flexible write capabilities. Its robust performance makes it a top choice for applications in telecommunications, networking, and other data-intensive environments, paving the way for next-generation memory solutions.