CY7C1297H

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

 

Power Applied

–55°C to + 125°C

Supply Voltage on VDD Relative to GND

–0.5V to + 4.6V

Supply Voltage on VDDQ Relative to GND

–0.5V to + VDD

DC Voltage Applied to Outputs

 

 

in Tri-State

–0.5V to VDDQ + 0.5V

Electrical Characteristics Over the Operating Range [7, 8]

DC Input Voltage

...................................

–0.5V to VDD + 0.5V

Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage

 

>2001V

(per MIL-STD-883, Method 3015)

 

 

Latch-up Current

 

 

>200 mA

Operating Range

 

 

 

Ambient

 

 

Range

Temperature

VDD

VDDQ

Commercial

0°C to +70°C

3.3V

2.5V –5%

 

 

5%/+10%

to VDD

Industrial

–40°C to +85°C

Parameter

Description

Test Conditions

Min.

Max.

Unit

VDD

Power Supply Voltage

 

 

3.135

3.6

V

VDDQ

I/O Supply Voltage

for 3.3V I/O

 

3.135

VDD

V

 

 

for 2.5V I/O

 

2.375

2.625

V

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

for 3.3V I/O, IOH = –4.0 mA

 

2.4

 

V

 

 

for 2.5V I/O, IOH = –1.0 mA

 

2.0

 

V

VOL

Output LOW Voltage

for 3.3V I/O, IOL = 8.0 mA

 

 

0.4

V

 

 

for 2.5V I/O, IOL = 1.0 mA

 

 

0.4

V

VIH

Input HIGH Voltage[7]

for 3.3V I/O

 

2.0

VDD + 0.3V

V

 

 

for 2.5V I/O

 

1.7

VDD + 0.3V

V

VIL

Input LOW Voltage[7]

for 3.3V I/O

 

–0.3

0.8

V

 

 

for 2.5V I/O

 

–0.3

0.7

V

 

 

 

 

 

 

 

IX

Input Leakage Current

GND VI VDDQ

 

5

5

A

 

except ZZ and MODE

 

 

 

 

 

 

Input Current of MODE

Input = VSS

 

–30

 

A

 

 

Input = VDD

 

 

5

A

 

Input Current of ZZ

Input = VSS

 

–5

 

A

 

 

Input = VDD

 

 

30

A

IOZ

Output Leakage Current

GND VI VDDQ, Output Disabled

–5

5

A

IDD

VDD Operating Supply

VDD = Max., IOUT = 0 mA,

7.5-ns cycle, 133 MHz

 

225

mA

 

Current

f = fMAX= 1/tCYC

 

 

 

 

 

10.0-ns cycle, 100 MHz

 

205

mA

ISB1

Automatic CE

Max. VDD, Device Deselected,

7.5-ns cycle, 133 MHz

 

90

mA

 

Power-Down

VIN VIH or VIN VIL, f = fMAX,

 

 

 

 

 

10.0-ns cycle, 100 MHz

 

80

mA

 

Current—TTL Inputs

inputs switching

 

 

 

 

ISB2

Automatic CE

Max. VDD, Device Deselected,

All speeds

 

40

mA

 

Power-Down

VIN VDD – 0.3V or VIN 0.3V,

 

 

 

 

 

Current—CMOS Inputs

f = 0, inputs static

 

 

 

 

ISB3

Automatic CE

Max. VDD, Device Deselected,

7.5-ns cycle, 133 MHz

 

75

mA

 

Power-Down

VIN VDDQ – 0.3V or VIN 0.3V,

 

 

 

 

 

10.0-ns cycle, 100 MHz

 

65

mA

 

Current—CMOS Inputs

f = fMAX, inputs switching

 

 

 

 

ISB4

Automatic CE

Max. VDD, Device Deselected,

All speeds

 

45

mA

 

Power-Down

VIN VDD – 0.3V or VIN 0.3V,

 

 

 

 

 

Current—TTL Inputs

f = 0, inputs static

 

 

 

 

Notes:

7.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).

8.TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05669 Rev. *B

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Cypress CY7C1297H manual Maximum Ratings, Operating Range, Ambient Range, Description Test Conditions Min Max Unit

CY7C1297H specifications

The Cypress CY7C1297H is a high-performance synchronous static random-access memory (SRAM) that offers an optimal solution for various memory applications, particularly in communication and networking devices. Designed as a part of the Cypress family of SRAMs, the CY7C1297H encompasses advanced features that significantly enhance its performance and efficiency.

One of the standout features of the CY7C1297H is its high density, providing 128 megabits of storage capacity. This ample memory size allows it to support a wide range of applications, especially in complex systems where large data buffers are crucial. The architecture is built on advanced CMOS technology, ensuring low power consumption and high speed. The device operates at frequencies up to 166 MHz, enabling fast data access and processing, which is vital for high-speed networking applications.

The CY7C1297H SRAM also supports synchronous interface, ensuring that data transfers are synchronized with clock cycles, thus eliminating delays associated with asynchronous memory types. This synchronous operation enhances the performance of high-speed systems by reducing cycle time and increasing throughput. The device utilizes a burst mode feature, allowing for sequential data access without the need for repeated address inputs, which further boosts efficiency during data retrieval.

Additionally, the CY7C1297H comes with an advanced write operation capability, including features such as byte-write and latch control, enabling partial updates and reducing system overhead. This flexibility is especially beneficial for applications requiring dynamic memory updates such as packet processing and buffering in sophisticated communication environments.

In terms of power management, the CY7C1297H is designed with low standby and active power consumption characteristics. This not only contributes to lower energy costs but also extends the lifespan of the device, making it suitable for battery-operated systems.

The package options for the CY7C1297H are diverse, allowing for easy integration into various designs. It is available in both leaded and lead-free versions, catering to various environmental and regulatory requirements.

In summary, the Cypress CY7C1297H SRAM is a high-density, high-speed memory solution that excels in synchronous operation, low power consumption, and advanced features such as burst mode access and flexible write capabilities. Its robust performance makes it a top choice for applications in telecommunications, networking, and other data-intensive environments, paving the way for next-generation memory solutions.