CY7C1297H

Selection Guide

 

133 MHz

100 MHz

Unit

 

 

 

 

Maximum Access Time

6.5

8.0

ns

 

 

 

 

Maximum Operating Current

225

205

mA

 

 

 

 

Maximum Standby Current

40

40

mA

 

 

 

 

Pin Configuration

100-Pin TQFP

A A CE

CE

NC NC BW

BW CE

V V CLK

GW

 

BWE OE

ADSC

 

ADSP

ADV

A A

 

 

 

1

2

 

B

A

3

DD SS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BYTE B

NC

NC

NC

VDDQ

VSS

NC NC

DQB

DQB

VSS VDDQ

DQB DQB

NC

VDD

NC

VSS

DQB

DQB

VDDQ

VSS

DQB

DQB

DQPB

NC

VSS VDDQ

NC

NC

NC

100

99

98

97

96

95

94

93

92

91

90

89

88

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15CY7C1297H

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

87

86

85

84

83

82

81

80

79

78

77

76

75

74

73

72

71

70

69

68

67

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

51

44

45

46

47

48

49

50

A

NC

NC

VDDQ

VSS

NC DQPA

DQA DQA

VSS

VDDQ

DQA DQA

VSS

NC

VDD

ZZ

DQA DQA

VDDQ

VSS

DQA DQA NC

NC

VSS

VDDQ

NC

NC

NC

BYTE A

MODE A A A A A A

NC/72M NC/36M

V

V

NC/18M NC/9M A A A A A NC/2M NC/4M

1 0

 

SS

DD

 

Document #: 38-05669 Rev. *B

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Cypress manual Selection Guide, Pin Configuration Pin Tqfp, 15CY7C1297H, MHz 100 MHz Unit

CY7C1297H specifications

The Cypress CY7C1297H is a high-performance synchronous static random-access memory (SRAM) that offers an optimal solution for various memory applications, particularly in communication and networking devices. Designed as a part of the Cypress family of SRAMs, the CY7C1297H encompasses advanced features that significantly enhance its performance and efficiency.

One of the standout features of the CY7C1297H is its high density, providing 128 megabits of storage capacity. This ample memory size allows it to support a wide range of applications, especially in complex systems where large data buffers are crucial. The architecture is built on advanced CMOS technology, ensuring low power consumption and high speed. The device operates at frequencies up to 166 MHz, enabling fast data access and processing, which is vital for high-speed networking applications.

The CY7C1297H SRAM also supports synchronous interface, ensuring that data transfers are synchronized with clock cycles, thus eliminating delays associated with asynchronous memory types. This synchronous operation enhances the performance of high-speed systems by reducing cycle time and increasing throughput. The device utilizes a burst mode feature, allowing for sequential data access without the need for repeated address inputs, which further boosts efficiency during data retrieval.

Additionally, the CY7C1297H comes with an advanced write operation capability, including features such as byte-write and latch control, enabling partial updates and reducing system overhead. This flexibility is especially beneficial for applications requiring dynamic memory updates such as packet processing and buffering in sophisticated communication environments.

In terms of power management, the CY7C1297H is designed with low standby and active power consumption characteristics. This not only contributes to lower energy costs but also extends the lifespan of the device, making it suitable for battery-operated systems.

The package options for the CY7C1297H are diverse, allowing for easy integration into various designs. It is available in both leaded and lead-free versions, catering to various environmental and regulatory requirements.

In summary, the Cypress CY7C1297H SRAM is a high-density, high-speed memory solution that excels in synchronous operation, low power consumption, and advanced features such as burst mode access and flexible write capabilities. Its robust performance makes it a top choice for applications in telecommunications, networking, and other data-intensive environments, paving the way for next-generation memory solutions.