Cypress CY7C1297H manual ZZ Mode Electrical Characteristics

CY7C1297H

ZZ Mode Electrical Characteristics

Parameter	Description	Test Conditions	Min.	Max.	Unit
IDDZZ	Sleep mode standby current	ZZ > VDD – 0.2V		40	mA
tZZS	Device operation to ZZ	ZZ > VDD – 0.2V		2tCYC	ns
tZZREC	ZZ recovery time	ZZ < 0.2V	2tCYC		ns
tZZI	ZZ Active to sleep current	This parameter is sampled		2tCYC	ns
tRZZI	ZZ Inactive to exit sleep current	This parameter is sampled	0		ns

Truth Table[2, 3, 4, 5, 6]

Cycle Description

Address Used

CE1

CE2

CE3

ZZ

ADSP

ADSC

ADV

WRITE

OE

CLK

DQ

Deselected Cycle,

None

H

X

X

L

X

L

X

X

X

L-H

Tri-State

Power-down

Deselected Cycle,

None

L

L

X

L

L

X

X

X

X

L-H

Tri-State

Power-down

Deselected Cycle,

None

L

X

H

L

L

X

X

X

X

L-H

Tri-State

Power-down

Deselected Cycle,

None

L

L

X

L

H

L

X

X

X

L-H

Tri-State

Power-down

Deselected Cycle,

None

X

X

X

L

H

L

X

X

X

L-H

Tri-State

Power-down

Sleep Mode, Power-down

None

X

X

X

H

X

X

X

X

X

X

Tri-State

Read Cycle, Begin Burst

External

L

H

L

L

L

X

X

X

L

L-H

Q

Read Cycle, Begin Burst

External

L

H

L

L

L

X

X

X

H

L-H

Tri-State

Write Cycle, Begin Burst

External

L

H

L

L

H

L

X

L

X

L-H

D

Read Cycle, Begin Burst

External

L

H

L

L

H

L

X

H

L

L-H

Q

Read Cycle, Begin Burst

External

L

H

L

L

H

L

X

H

H

L-H

Tri-State

Read Cycle, Continue Burst

Next

X

X

X

L

H

H

L

H

L

L-H

Q

Read Cycle, Continue Burst

Next

X

X

X

L

H

H

L

H

H

L-H

Tri-State

Read Cycle, Continue Burst

Next

H

X

X

L

X

H

L

H

L

L-H

Q

Read Cycle, Continue Burst

Next

H

X

X

L

X

H

L

H

H

L-H

Tri-State

Write Cycle, Continue Burst

Next

X

X

X

L

H

H

L

L

X

L-H

D

Write Cycle, Continue Burst

Next

H

X

X

L

X

H

L

L

X

L-H

D

Read Cycle, Suspend Burst

Current

X

X

X

L

H

H

H

H

L

L-H

Q

Read Cycle, Suspend Burst

Current

X

X

X

L

H

H

H

H

H

L-H

Tri-State

Read Cycle, Suspend Burst

Current

H

X

X

L

X

H

H

H

L

L-H

Q

Read Cycle, Suspend Burst

Current

H

X

X

L

X

H

H

H

H

L-H

Tri-State

Write Cycle, Suspend Burst

Current

X

X

X

L

H

H

H

L

X

L-H

D

Write Cycle, Suspend Burst

Current

H

X

X

L

X

H

H

L

X

L-H

D

Notes:

2.X = “Don't Care.” H = Logic HIGH, L = Logic LOW.

3.WRITE = L when any one or more Byte Write Enable signals (BWA, BWB) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals (BWA, BWB), BWE, GW = H.

4.The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.

5.The SRAM always initiates a Read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW[A: B]. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to tri-state. OE is a don't care for the remainder of the Write cycle.

6.OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle all data bits are tri-state when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).

Document #: 38-05669 Rev. *B Page 5 of 15

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