CY7C1297H

Switching Characteristics Over the Operating Range [10, 11]

 

 

 

 

 

 

 

 

 

 

 

 

 

133 MHz

100 MHz

 

Parameter

 

 

 

 

 

 

 

 

 

 

 

Description

 

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

t

 

V (Typical) to the First Access[12]

1

 

1

 

ms

POWER

 

DD

 

 

 

 

 

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

7.5

 

10.0

 

ns

tCH

 

Clock HIGH

2.5

 

4.0

 

ns

tCL

 

Clock LOW

2.5

 

4.0

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCDV

 

Data Output Valid after CLK Rise

 

6.5

 

8.0

ns

tDOH

 

Data Output Hold after CLK Rise

2.0

 

2.0

 

ns

tCLZ

 

Clock to Low-Z[13, 14, 15]

0

 

0

 

ns

tCHZ

 

Clock to High-Z[13, 14, 15]

 

3.5

 

3.5

ns

tOEV

 

 

 

LOW to Output Valid

 

3.5

 

3.5

ns

 

OE

 

 

tOELZ

 

 

 

LOW to Output Low-Z[13, 14, 15]

0

 

0

 

ns

 

OE

 

 

tOEHZ

 

 

 

HIGH to Output High-Z[13, 14, 15]

 

3.5

 

3.5

ns

 

OE

 

 

Set-up Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Set-up before CLK Rise

1.5

 

2.0

 

ns

tADS

 

 

 

 

 

 

 

 

 

 

Set-up before CLK Rise

1.5

 

2.0

 

ns

 

ADSP,

ADSC

 

 

tADVS

 

 

 

 

 

Set-up before CLK Rise

1.5

 

2.0

 

ns

 

ADV

 

 

tWES

 

 

 

 

 

 

 

 

 

 

[A:B] Set-up before CLK Rise

1.5

 

2.0

 

ns

GW,

BWE,

BW

tDS

 

Data Input Set-up before CLK Rise

1.5

 

2.0

 

ns

tCES

 

Chip Enable Set-up

1.5

 

2.0

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold after CLK Rise

0.5

 

0.5

 

ns

tADH

 

 

 

 

 

 

 

 

 

 

Hold after CLK Rise

0.5

 

0.5

 

ns

 

ADSP,

ADSC

 

 

tWEH

 

 

 

 

 

 

 

 

 

 

[A:B] Hold after CLK Rise

0.5

 

0.5

 

ns

GW,

BWE,

BW

tADVH

 

 

 

 

Hold after CLK Rise

0.5

 

0.5

 

ns

 

ADV

 

 

tDH

 

Data Input Hold after CLK Rise

0.5

 

0.5

 

ns

tCEH

 

Chip Enable Hold after CLK Rise

0.5

 

0.5

 

ns

Notes:

10.Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.

11.Test conditions shown in (a) of AC Test Loads unless otherwise noted.

12.This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a Read or Write operation can be initiated.

13.tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in (a) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

14.At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions.

15.This parameter is sampled and not 100% tested.

Document #: 38-05669 Rev. *B

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Cypress CY7C1297H manual Switching Characteristics Over the Operating Range 10
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CY7C1297H specifications

The Cypress CY7C1297H is a high-performance synchronous static random-access memory (SRAM) that offers an optimal solution for various memory applications, particularly in communication and networking devices. Designed as a part of the Cypress family of SRAMs, the CY7C1297H encompasses advanced features that significantly enhance its performance and efficiency.

One of the standout features of the CY7C1297H is its high density, providing 128 megabits of storage capacity. This ample memory size allows it to support a wide range of applications, especially in complex systems where large data buffers are crucial. The architecture is built on advanced CMOS technology, ensuring low power consumption and high speed. The device operates at frequencies up to 166 MHz, enabling fast data access and processing, which is vital for high-speed networking applications.

The CY7C1297H SRAM also supports synchronous interface, ensuring that data transfers are synchronized with clock cycles, thus eliminating delays associated with asynchronous memory types. This synchronous operation enhances the performance of high-speed systems by reducing cycle time and increasing throughput. The device utilizes a burst mode feature, allowing for sequential data access without the need for repeated address inputs, which further boosts efficiency during data retrieval.

Additionally, the CY7C1297H comes with an advanced write operation capability, including features such as byte-write and latch control, enabling partial updates and reducing system overhead. This flexibility is especially beneficial for applications requiring dynamic memory updates such as packet processing and buffering in sophisticated communication environments.

In terms of power management, the CY7C1297H is designed with low standby and active power consumption characteristics. This not only contributes to lower energy costs but also extends the lifespan of the device, making it suitable for battery-operated systems.

The package options for the CY7C1297H are diverse, allowing for easy integration into various designs. It is available in both leaded and lead-free versions, catering to various environmental and regulatory requirements.

In summary, the Cypress CY7C1297H SRAM is a high-density, high-speed memory solution that excels in synchronous operation, low power consumption, and advanced features such as burst mode access and flexible write capabilities. Its robust performance makes it a top choice for applications in telecommunications, networking, and other data-intensive environments, paving the way for next-generation memory solutions.
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