NXP Semiconductors

DRAFT

D

D

 

AFT

RAFT

RAFT AFT

 

 

 

DR

DR

DLPC2917/19

ARM9 microcontrollerRAFT withDRAFTCANDRAFTand LINDRAFT

Table 28. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

T DRAFT

T

DRA

DRA DR

F

F

DRAFT DRAFT DRAF

IOHS

HIGH-state short-circuit

Drive HIGH, output shorted

[9]

 

-

33

DRAFTmA

DRAFT

Symbol

Parameter

Conditions

 

 

Min

Max

Unit

 

 

IOLS

LOW-state short-circuit

Drive LOW, output shorted

[9]

 

-

+38

mA DRAFT

D

 

output current.

to VSS(IO).

 

 

 

 

 

 

 

 

output current.

to VDD(IO).

 

 

 

 

 

DRA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

General

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tstg

Storage temperature.

 

 

 

40

+150

°C

 

 

Tamb

Ambient temperature.

 

 

 

40

+85

°C

 

 

Tvj

Virtual junction temperature.

 

 

[6]

40

+125

°C

 

 

Memory

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

nendu(fl)

Endurance of flash memory.

 

 

 

-

100 000

cycle

 

 

tret(fl)

Flash memory retention

 

 

 

-

20

year

 

 

 

time.

 

 

 

 

 

 

 

 

Electrostatic discharge

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vesd

Electrostatic discharge

On all pins.

 

 

 

 

 

 

 

 

voltage.

 

 

 

 

 

 

 

 

 

Human body model.

 

[7]

2000

+2000

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Machine model.

 

[8]

200

+200

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Charged device model.

 

 

500

+500

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

On corner pins.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Charged device model.

 

 

-750

+750

V

 

 

 

 

 

 

 

 

 

 

 

 

[1]Based on package heat transfer, not device power consumption.

[2]Peak current must be limited at 25 times average current.

[3]For I/O Port 0, the maximum input voltage is defined by VI(ADC).

[4]Only when VDD(IO) is present.

[5]Note that pull-up should be off. With pull-up do not exceed 3.6 V.

[6]In accordance with IEC 60747-1. An alternative definition of the virtual junction temperature is: Tvj = Tamb + Ptot R a fixed value; see Section 10. The rating for Tvj limits the allowable combinations of power dissipation and ambient

[7]Human-body model: discharging a 100 pF capacitor via a 10 kΩ series resistor.

[8]Machine model: discharging a 200 pF capacitor via a 0.75 μH series inductance and 10 Ω resistor.

[9]112 mA per VDD(IO) or VSS(IO) should not be exceeded.

th(j-a) where Rth(j-a) is

temperature.

10. Thermal characteristics

Table 29.

Thermal characteristics

 

 

 

Symbol

Parameter

Conditions

Value

Unit

Rth(j-a)

thermal resistance from

in free air

 

 

 

junction to ambient

 

 

 

 

package;

 

 

 

 

 

 

 

 

 

 

 

 

 

LQFP144

62

K/W

 

 

 

 

 

LPC2917_19_1

© NXP B.V. 2007. All rights reserved.

Preliminary data sheet

Rev. 1.01 — 15 November 2007

52 of 68

Page 52
Image 52
NXP Semiconductors LPC2919, LPC2917 user manual Thermal characteristics