NXP Semiconductors

DRAFT

D

D

 

AFT

RAFT

RAFT AFT

 

 

 

DR

DR

DLPC2917/19

ARM9 microcontrollerRAFT withDRAFTCANDRAFTand LINDRAFT

T DRAFT

T

DRA

 

DRA

DR

F

 

F

are added between a read and a write cycle in the same external memory DRAFTdevice.

DRAFT

DRAF

Usage of the idle/turn-around time (IDCY) is demonstrated In Figure 6. Extra wait states

 

 

 

DRAFT DRAFT

 

 

DRAFT

D

CLK(SYS)

 

 

 

DRA

 

 

CS

 

 

 

WE_N / BLS

 

 

 

OE_N

 

 

 

ADDR

 

 

 

DATA

 

 

 

WSTOEN

 

WSTWEN

 

WST1

IDCY

WST2

 

WSTOEN=5, WSTWEN=5, WST1=7, WST2=6, IDCY=5

 

 

Fig 6. Reading/writing external memory

 

 

 

Address pins on the device are shared with other functions. When connecting external memories, check that the I/O pin is programmed for the correct function. Control of these settings is handled by the SCU.

LPC2917_19_1

© NXP B.V. 2007. All rights reserved.

Preliminary data sheet

Rev. 1.01 — 15 November 2007

21 of 68

Page 21
Image 21
NXP Semiconductors LPC2917, LPC2919 user manual Reading/writing external memory