NXP Semiconductors LPC2919 user manual Overview, Description, DLPC2917/19

NXP Semiconductors

DRAFT	D	D		AFT
	RAFT	RAFT AFT
			DR	DR

DLPC2917/19

ARM9 microcontrollerRAFT withDRAFTCANDRAFTand LINDRAFT

T	DRAFT	T
DRA		DRA		DR
F		F
cannot be performed at full speed (i.e. with zero wait-states at the AHB bus)DRAFTif speculativeDRAFT			DRAF
Remark: If the programmed number of wait-states is more than three, flash-data reading
reading is active.	DRAFT DRAFT
8.2 External static memory controller		DRAFT		D

8.2.1Overview

The LPC2917/19 contains an external Static Memory Controller (SMC) which provides an interface for external (off-chip) memory devices.

Key features are:

DRA

•Supports static memory-mapped devices including RAM, ROM, flash, burst ROM and external I/O devices

•Asynchronous page-mode read operation in non-clocked memory subsystems

•Asynchronous burst-mode read access to burst-mode ROM devices

•Independent configuration for up to eight banks, each up to 16 MB

•Programmable bus-turnaround (idle) cycles (one to 16)

•Programmable read and write wait states (up to 32), for static RAM devices

•Programmable initial and subsequent burst-read wait state for burst-ROM devices

•Programmable write protection

•Programmable burst-mode operation

•Programmable external data width: 8-bit, 16-bit or 32-bit

•Programmable read-byte lane enable control

8.2.2Description

The SMC simultaneously supports up to eight independently configurable memory banks. Each memory bank can be 8, 16 or 32 bits wide and is capable of supporting SRAM, ROM, burst-ROM memory or external I/O devices.

A separate chip-select output is available for each bank. The chip-select lines are configurable to be active HIGH or LOW. Memory-bank selection is controlled by memory addressing. Table 10 shows how the 32-bit system address is mapped to the external bus memory base addresses, chip selects and bank internal addresses.

Table 10. External memory-bank address bit description

	32 bit	Symbol	Description
	System
	Address Bit
	field
	31 to 29	BA[2:0]	external static-memory base address (three most significant bits);
			the base address can be found in the memory map; see Ref. 1. This
			field contains ’010’ when addressing an external memory bank.
	28 to 26	CS[2:0]	chip-select address space for eight memory banks; see [1]
	25 and 24	-	always ’00’; other values are ’mirrors’ of the 16 MByte bank address
	23 to 0	A[23:0]	16-MByte memory banks address space
LPC2917_19_1			© NXP B.V. 2007. All rights reserved.

Preliminary data sheet Rev. 1.01 — 15 November 2007 18 of 68