NXP Semiconductors
DRAFT | D | D |
| AFT |
RAFT | RAFT AFT | |||
|
|
| DR | DR |
DLPC2917/19
ARM9 microcontrollerRAFT withDRAFTCANDRAFTand LINDRAFT
Table 11. External static-memory controller banks
CS[2:0] | Bank |
000 | bank 0 |
001 | bank 1 |
010 | bank 2 |
T DRAFT | T |
|
DRA | DRA DR | |
F | F |
|
DRAFT DRAFT DRAF | ||
DRAFT DRAFT | ||
| DRAFT | D |
|
|
011 | bank 3 |
100bank 4
101bank 5
110bank 6
111bank 7
DRA
8.2.3External static-memory controller pin description
The external
Table 12. External memory controller pins
Symbol | Direction | Description |
EXTBUS CSx | out | |
|
|
|
EXTBUS BLSy | out | |
|
|
|
EXTBUS WE_N | out | write enable (active LOW) |
|
|
|
EXTBUS OE_N | out | output enable (active LOW) |
|
|
|
EXTBUS A[23:0] | out | address bus |
|
|
|
EXTBUS D[31:0] | in/out | data bus |
|
|
|
8.2.4External static-memory controller clock description
The External
8.2.5External memory timing diagrams
A timing diagram for reading from external memory is shown in Figure 4. The relationship between the
LPC2917_19_1 | © NXP B.V. 2007. All rights reserved. |
Preliminary data sheet | Rev. 1.01 — 15 November 2007 | 19 of 68 |