NXP Semiconductors

DRAFT

D

D

 

AFT

RAFT

RAFT AFT

 

 

 

DR

DR

DLPC2917/19

ARM9 microcontrollerRAFT withDRAFTCANDRAFTand LINDRAFT

 

T

DRAFT

 

 

T

 

 

DRA

 

DRA

 

DR

 

F

 

 

F

 

The flash memory has a 128-bit wide data interface and the flash controller offers two

 

 

DRAF

128-bit buffer lines to improve system performance. The flash has to be programmedDRAFT DRAFT

 

 

initially via JTAG. In-system programming must be supported by the boot loader.

 

DRAFT

In-application programming is possible. Flash memory contents can be protectedDRAFTby

disabling JTAG access. Suspension of burning or erasing is not supported.

 

DRAFT

D

 

 

The key features are:

 

 

 

 

 

 

DRA

Programming by CPU via AHB

 

 

 

 

 

 

 

 

 

 

Programming by external programmer via JTAG

 

 

 

 

 

 

JTAG access protection

 

 

 

 

 

 

Burn-finished and erase-finished interrupt

 

 

 

 

 

 

8.1.2 Description

 

 

 

 

 

 

After reset flash initialization is started, which takes tinit time, see Section 12. During this

 

 

 

 

initialization flash access is not possible and AHB transfers to flash are stalled, blocking

 

 

 

 

the AHB bus.

 

 

 

 

 

 

During flash initialization the index sector is read to identify the status of the JTAG access

 

 

protection and sector security. If JTAG access protection is active the flash is not

 

 

 

 

 

accessible via JTAG. ARM debug facilities are disabled to protect the flash-memory

 

 

 

 

 

contents against unwanted reading out externally. If sector security is active only the

 

 

 

 

 

concerned sections are read.

 

 

 

 

 

 

Flash can be read synchronously or asynchronously to the system clock. In synchronous

 

 

operation the flash goes into standby after returning the read data. Started reads cannot

 

 

 

 

be stopped, and speculative reading and dual buffering are therefore not supported.

 

 

 

 

 

With asynchronous reading, transfer of the address to the flash and of read data from the

 

 

flash is done asynchronously, giving the fastest possible response time. Started reads can

 

 

be stopped, so speculative reading and dual buffering are supported.

 

 

 

 

 

 

Buffering is offered because the flash has a 128-bit wide data interface while the AHB

 

 

 

 

interface has only 32 bits. With buffering a buffer line holds the complete 128-bit flash

 

 

 

 

word, from which four words can be read. Without buffering every AHB data port read

 

 

 

 

starts a flash read. A flash read is a slow process compared to the minimum AHB cycle

 

 

 

 

time, so with buffering the average read time is reduced. This can improve system

 

 

 

 

 

performance.

 

 

 

 

 

 

With single buffering the most recently read flash word remains available until the next

 

 

 

 

flash read. When an AHB data-port read transfer requires data from the same flash word

 

 

as the previous read transfer, no new flash read is done and the read data is given without

 

 

wait cycles.

 

 

 

 

 

 

When an AHB data-port read transfer requires data from a different flash word to that

 

 

 

 

 

involved in the previous read transfer, a new flash read is done and wait states are given

 

 

 

 

until the new read data is available.

 

 

 

 

 

 

With dual buffering a secondary buffer line is used, the output of the flash being

 

 

 

 

 

considered as the primary buffer. On a primary buffer hit data can be copied to the

 

 

 

 

 

secondary buffer line, which allows the flash to start a speculative read of the next flash

 

 

 

 

word.

 

 

 

 

 

 

LPC2917_19_1

© NXP B.V. 2007. All rights reserved.

 

 

 

Preliminary data sheet

Rev. 1.01 — 15 November 2007

15 of 68

Page 15
Image 15
NXP Semiconductors LPC2917, LPC2919 user manual Dra, Description