NXP Semiconductors

DRAFT

D

D

 

AFT

RAFT

RAFT AFT

 

 

 

DR

DR

DLPC2917/19

ARM9 microcontrollerRAFT withDRAFTCANDRAFTand LINDRAFT

 

 

DRA

 

DRA

DR

 

 

F

 

 

F

 

2.4 On-chip static RAM

T DRAFT

 

 

T

 

DRAFT

DRAFT DRAF

 

 

 

In addition to the two 16 kB TCMs the LPC2917/19 includes two static RAM memories:

DRAFT

 

one of 32 kB and one of 16 kB. Both may be used for code and/or data storage. Each

 

 

DRAFT

 

internal SRAM has its own controller, so both memories can be accessed simultaneously

D

 

from different AHB system bus layers.

 

 

DRAFT

 

 

 

 

 

 

3. Features

 

 

 

 

 

DRA

 

 

 

 

 

 

 

3.1

General

 

 

 

 

 

 

 

„ ARM968E-S processor at 80 MHz maximum

 

 

 

 

 

 

 

„ Multi-layer AHB system bus at 80 MHz with three separate layers

 

 

 

 

 

 

„ On-chip memory:

 

 

 

 

 

 

 

‹ Two Tightly Coupled Memories (TCM), 16 kB Instruction (ITCM), 16 kB Data TCM

 

 

(DTCM)

 

 

 

 

 

 

 

‹ Two separate internal Static RAM (SRAM) instances; 32 kB SRAM and 16 kB

 

 

 

 

 

SRAM

 

 

 

 

 

 

 

‹ Up to 768 kB flash-program memory

 

 

 

 

 

 

 

„ Two-channel CAN controller supporting Full-CAN and extensive message filtering

 

 

 

 

 

„ Two LIN master controllers with full hardware support for LIN communication

 

 

 

 

 

 

„ Two 550 UARTs with 16-byte Tx and Rx FIFO depths

 

 

 

 

 

 

 

„ Three full-duplex Q-SPIs with four slave-select lines; 16 bits wide; 8 locations deep; Tx

 

 

FIFO and Rx FIFO

 

 

 

 

 

 

 

„ Four 32-bit timers each containing four capture-and-compare registers linked to I/Os

 

 

 

 

„ 32-bit watchdog with timer change protection, running on safe clock.

 

 

 

 

 

 

„ Up to 108 general-purpose I/O pins with programmable pull-up, pull-down or bus

 

 

 

 

 

keeper

 

 

 

 

 

 

 

„ Vectored Interrupt Controller (VIC) with 16 priority levels

 

 

 

 

 

 

 

„ Two 8-channel 10-bit ADCs provide a total of up to 16 analog inputs, with conversion

 

 

 

 

times as low as 2.44 μs per channel. Each channel provides a compare function to

 

 

 

 

minimize interrupts

 

 

 

 

 

 

 

„ Up to 24 level-sensitive external interrupt pins, including CAN and LIN wake- up

 

 

 

 

 

features

 

 

 

 

 

 

 

„ External Static Memory Controller (SMC) with eight memory banks; up to 32-bit data

 

 

 

 

bus; up to 24-bit address bus

 

 

 

 

 

 

 

„ Processor wake-up from power-down via external interrupt pins; CAN or LIN activity

 

 

 

 

„ Flexible Reset Generator Unit (RGU) able to control resets of individual modules

 

 

 

 

 

„ Flexible Clock-Generation Unit (CGU) able to control clock frequency of individual

 

 

 

 

modules

 

 

 

 

 

 

 

‹ On-chip very low-power ring oscillator; fixed frequency of 0.4 MHz; always on to

 

 

 

 

provide a Safe_Clock source for system monitoring

 

 

 

 

 

 

 

‹ On-chip crystal oscillator with operating range from 10 MHz to 50 MHz - max. PLL

 

 

input 15 MHz

 

 

 

 

 

 

 

‹ On-chip PLL allows CPU operation up to a maximum CPU rate of 80 MHz

 

 

 

 

 

 

‹ Generation of up to 10 base clocks

 

 

 

 

 

 

 

‹ Seven fractional dividers

 

 

 

 

 

 

LPC2917_19_1

 

© NXP B.V. 2007. All rights reserved.

 

 

Preliminary data sheet

Rev. 1.01 — 15 November 2007

3 of 68

Page 3
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NXP Semiconductors LPC2917, LPC2919 user manual Features, On-chip static RAM, General