CY7C1316BV18, CY7C1916BV18

CY7C1318BV18, CY7C1320BV18

TAP AC Switching Characteristics

Over the Operating Range [13, 14]

Parameter

Description

Min

Max

Unit

tTCYC

TCK Clock Cycle Time

50

 

ns

tTF

TCK Clock Frequency

 

20

MHz

tTH

TCK Clock HIGH

20

 

ns

tTL

TCK Clock LOW

20

 

ns

Setup Times

 

 

 

 

 

 

 

 

 

tTMSS

TMS Setup to TCK Clock Rise

5

 

ns

tTDIS

TDI Setup to TCK Clock Rise

5

 

ns

tCS

Capture Setup to TCK Rise

5

 

ns

Hold Times

 

 

 

 

tTMSH

TMS Hold after TCK Clock Rise

5

 

ns

tTDIH

TDI Hold after Clock Rise

5

 

ns

tCH

Capture Hold after Clock Rise

5

 

ns

Output Times

 

 

 

 

 

 

 

 

 

tTDOV

TCK Clock LOW to TDO Valid

 

10

ns

tTDOX

TCK Clock LOW to TDO Invalid

0

 

ns

TAP Timing and Test Conditions

Figure 2 shows the TAP timing and test conditions. [14]

Figure 2. TAP Timing and Test Conditions

 

 

 

0.9V

 

 

 

 

 

 

50Ω

 

 

 

 

 

 

 

 

 

 

 

 

TDO

 

 

 

 

 

 

Z0

= 50Ω

 

 

 

CL = 20 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ALL INPUT PULSES

1.8V

0.9V

0V

(a)GND

Test Clock

TCK

Test Mode Select

TMS

Test Data In

TDI

Test Data Out

TDO

tTH

tTMSS

tTDIS

tTL

tTCYC

tTMSH

tTDIH

tTDOV

 

 

 

t

 

 

 

 

 

 

 

 

TDOX

Notes

13.tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.

14.Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.

Document Number: 38-05621 Rev. *D

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Cypress CY7C1318BV18, CY7C1320BV18, CY7C1316BV18 manual TAP AC Switching Characteristics, TAP Timing and Test Conditions

CY7C1316BV18, CY7C1916BV18, CY7C1320BV18, CY7C1318BV18 specifications

The Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 are advanced synchronous static RAM (SRAM) devices designed to meet the high-performance requirements of modern computing systems. Offering a blend of high speed, low power consumption, and large storage capacities, these chips are widely utilized in applications such as networking equipment, telecommunications, and high-speed data processing.

The CY7C1318BV18 is a 2 Megabit SRAM that operates at a 2.5V supply voltage. It features a fast access time of 10ns, making it an excellent choice for systems that require rapid data retrieval. Its asynchronous interface simplifies integration into a wide range of devices. In terms of power efficiency, the CY7C1318BV18 has a low operating current, ensuring that it can be utilized in battery-powered applications without significantly draining power.

Similarly, the CY7C1320BV18 offers a larger 256 Kbit capacity while maintaining the same low-voltage operation and performance characteristics. This chip also features a synchronous interface, supporting high-speed data transfer rates that are ideal for networking and communication devices. The CY7C1320BV18's features include deep-write operation capabilities, enhancing its performance in write-intensive applications.

The CY7C1916BV18 takes performance a step further with its 32 Megabit capacity, suitable for applications requiring extensive memory resources. This device also supports advanced functions such as burst read modes, allowing for faster sequential data access. With its low-latency performance, the CY7C1916BV18 is an excellent choice for applications like digital signal processing and real-time data analysis.

Lastly, the CY7C1316BV18 is another variant offering 1 Megabit of storage. It combines high-speed functionality with low power usage, supporting a wide range of applications including consumer electronics and automotive systems. Its robust design ensures reliability under varying environmental conditions.

All of these SRAM devices incorporate Cypress’s advanced semiconductor technology, providing a combination of speed, efficiency, and reliability. They are available in various package options, which facilitate easy integration into diverse system designs. Overall, the Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 exemplify the company’s commitment to delivering high-quality memory solutions that cater to the evolving needs of the electronic industry.