CY7C1316BV18, CY7C1916BV18

CY7C1318BV18, CY7C1320BV18

Switching Waveforms

Figure 5. Read/Write/Deselect Sequence [26, 27, 28]

NOP

 

READ

READ

1

 

2

3

K

 

 

 

tKH

tKL

tCYC

tKHKH

K

 

 

 

LD

 

 

 

 

 

t

 

R/W

 

 

 

NOP

NOP

WRITE

WRITE

READ

 

 

 

4

5

6

7

8

9

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

A0

A1

tSA

 

tHA

DQ

tKHCH tCLZ tCO

C

 

A3

 

tHD

 

tSD

Q00 Q01 Q10 Q11

D20

tCQDOH

 

tDOH

tCHZ

tCQD

 

A4

tHD

tSD

D21

D30

D31

Q40 Q41

t KHCH

C#

tKH tKL

 

tCYC

tKHKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CQ

tCQOH

CQ#

tCQOH

tCCQO

tCCQO

DON’T CARE

UNDEFINED

Notes

26.Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.

27.Outputs are disabled (High-Z) one clock cycle after a NOP.

28.In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram.

Document Number: 38-05621 Rev. *D

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Cypress CY7C1320BV18, CY7C1318BV18, CY7C1316BV18, CY7C1916BV18 manual Switching Waveforms, DON’T Care Undefined

CY7C1316BV18, CY7C1916BV18, CY7C1320BV18, CY7C1318BV18 specifications

The Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 are advanced synchronous static RAM (SRAM) devices designed to meet the high-performance requirements of modern computing systems. Offering a blend of high speed, low power consumption, and large storage capacities, these chips are widely utilized in applications such as networking equipment, telecommunications, and high-speed data processing.

The CY7C1318BV18 is a 2 Megabit SRAM that operates at a 2.5V supply voltage. It features a fast access time of 10ns, making it an excellent choice for systems that require rapid data retrieval. Its asynchronous interface simplifies integration into a wide range of devices. In terms of power efficiency, the CY7C1318BV18 has a low operating current, ensuring that it can be utilized in battery-powered applications without significantly draining power.

Similarly, the CY7C1320BV18 offers a larger 256 Kbit capacity while maintaining the same low-voltage operation and performance characteristics. This chip also features a synchronous interface, supporting high-speed data transfer rates that are ideal for networking and communication devices. The CY7C1320BV18's features include deep-write operation capabilities, enhancing its performance in write-intensive applications.

The CY7C1916BV18 takes performance a step further with its 32 Megabit capacity, suitable for applications requiring extensive memory resources. This device also supports advanced functions such as burst read modes, allowing for faster sequential data access. With its low-latency performance, the CY7C1916BV18 is an excellent choice for applications like digital signal processing and real-time data analysis.

Lastly, the CY7C1316BV18 is another variant offering 1 Megabit of storage. It combines high-speed functionality with low power usage, supporting a wide range of applications including consumer electronics and automotive systems. Its robust design ensures reliability under varying environmental conditions.

All of these SRAM devices incorporate Cypress’s advanced semiconductor technology, providing a combination of speed, efficiency, and reliability. They are available in various package options, which facilitate easy integration into diverse system designs. Overall, the Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 exemplify the company’s commitment to delivering high-quality memory solutions that cater to the evolving needs of the electronic industry.