CY7C1316BV18, CY7C1916BV18

CY7C1318BV18, CY7C1320BV18

Capacitance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V

5

pF

CCLK

Clock Input Capacitance

 

6

pF

CO

Output Capacitance

 

7

pF

Thermal Resistance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

 

Test Conditions

165 FBGA

Unit

 

Package

 

 

 

 

 

ΘJA

Thermal Resistance

 

Test conditions follow standard test methods and

18.7

°C/W

 

(Junction to Ambient)

 

procedures for measuring thermal impedance, in

 

 

 

 

 

accordance with EIA/JESD51.

 

 

ΘJC

Thermal Resistance

 

4.5

°C/W

 

 

 

(Junction to Case)

 

 

 

 

 

 

Figure 4. AC Test Loads and Waveforms

 

 

VREF = 0.75V

VREF

 

 

 

 

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

Z0 = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

Device

 

 

 

 

 

 

 

 

 

Under

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test

 

 

 

 

 

 

 

 

 

 

 

 

 

ZQ

RQ =

250Ω

(a)

RL = 50Ω

VREF = 0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VREF

 

 

 

 

 

 

0.75V

 

 

 

 

 

R = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ALL INPUT PULSES[20]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Device

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF 0.25V

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Under

ZQ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Slew Rate = 2 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test

 

 

 

 

 

 

RQ =

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

250Ω

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

(b)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note

20.Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, VREF = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads and Waveforms.

Document Number: 38-05621 Rev. *D

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Cypress CY7C1316BV18, CY7C1318BV18 manual Capacitance, Thermal Resistance, Parameter Description Test Conditions Max Unit

CY7C1316BV18, CY7C1916BV18, CY7C1320BV18, CY7C1318BV18 specifications

The Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 are advanced synchronous static RAM (SRAM) devices designed to meet the high-performance requirements of modern computing systems. Offering a blend of high speed, low power consumption, and large storage capacities, these chips are widely utilized in applications such as networking equipment, telecommunications, and high-speed data processing.

The CY7C1318BV18 is a 2 Megabit SRAM that operates at a 2.5V supply voltage. It features a fast access time of 10ns, making it an excellent choice for systems that require rapid data retrieval. Its asynchronous interface simplifies integration into a wide range of devices. In terms of power efficiency, the CY7C1318BV18 has a low operating current, ensuring that it can be utilized in battery-powered applications without significantly draining power.

Similarly, the CY7C1320BV18 offers a larger 256 Kbit capacity while maintaining the same low-voltage operation and performance characteristics. This chip also features a synchronous interface, supporting high-speed data transfer rates that are ideal for networking and communication devices. The CY7C1320BV18's features include deep-write operation capabilities, enhancing its performance in write-intensive applications.

The CY7C1916BV18 takes performance a step further with its 32 Megabit capacity, suitable for applications requiring extensive memory resources. This device also supports advanced functions such as burst read modes, allowing for faster sequential data access. With its low-latency performance, the CY7C1916BV18 is an excellent choice for applications like digital signal processing and real-time data analysis.

Lastly, the CY7C1316BV18 is another variant offering 1 Megabit of storage. It combines high-speed functionality with low power usage, supporting a wide range of applications including consumer electronics and automotive systems. Its robust design ensures reliability under varying environmental conditions.

All of these SRAM devices incorporate Cypress’s advanced semiconductor technology, providing a combination of speed, efficiency, and reliability. They are available in various package options, which facilitate easy integration into diverse system designs. Overall, the Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 exemplify the company’s commitment to delivering high-quality memory solutions that cater to the evolving needs of the electronic industry.