PRELIMINARY

CY7C1336H

 

 

Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Name

 

I/O

 

 

 

 

Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A0, A1,

 

Input-

Address Inputs used to select one of the 64K address locations. Sampled at the rising edge of the

 

 

A

Synchronous

CLK if ADSP or ADSC is active LOW, and

CE

1, CE2, and CE3 are sampled active. A[1:0] feed the 2-bit

 

 

 

 

 

 

 

 

 

 

 

 

 

counter.

 

 

 

 

 

 

 

 

 

 

 

 

A,

 

Input-

Byte Write Select Inputs, active LOW. Qualified with

 

to conduct Byte Writes to the SRAM.

 

 

BW

 

BWE

 

 

BWB

Synchronous

Sampled on the rising edge of CLK.

 

 

 

 

 

 

 

 

 

BWC,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BWD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global

 

 

GW

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

Write is conducted (ALL bytes are written, regardless of the values on BW[A:D] and BWE).

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be

 

 

BWE

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

asserted LOW to conduct a Byte Write.

 

 

 

 

 

 

 

 

 

CLK

Input-Clock

Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst

 

 

 

 

 

 

 

 

 

 

 

 

 

counter when ADV is asserted LOW, during a burst operation.

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

Input-

Chip

Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a

 

 

 

 

 

 

 

 

 

 

 

 

 

new external address is loaded.

 

 

 

 

 

 

 

 

 

CE2

 

Input-

Chip

Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with

 

 

1

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

Synchronous

and CE3 to select/deselect the device. CE2 is sampled only when a new external address is loaded.

 

 

 

3

 

 

 

 

Input-

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

 

1

 

 

CE

 

CE

 

 

 

 

 

 

 

 

 

 

 

Synchronous

and CE2 to select/deselect the device. CE3 is sampled only when a new external address is loaded.

 

 

 

 

 

 

 

 

 

Input-

Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When LOW,

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data

 

 

 

 

 

 

 

 

 

 

 

 

 

pins. OE is masked during the first clock of a Read cycle when emerging from a deselected state.

 

 

 

 

 

 

 

 

 

 

 

Input-

Advance Input signal, sampled on the rising edge of CLK. When asserted, it automatically incre-

 

 

ADV

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

ments the address in a burst cycle.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When asserted

 

 

ADSP

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

LOW, addresses presented to the device are captured in the address registers. A[1:0]

are also loaded

 

 

 

 

 

 

 

 

 

 

 

 

 

into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is

 

 

 

 

 

 

 

 

 

 

 

 

 

ignored when CE1 is deasserted HIGH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When asserted

 

 

ADSC

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

LOW, addresses presented to the device are captured in the address registers. A[1:0]

are also loaded

 

 

 

 

 

 

 

 

 

 

 

 

 

into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized.

 

 

ZZ

 

Input-

ZZ “sleep” Input, active HIGH. When asserted HIGH places the device in a non-time-critical “sleep”

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating.

 

 

 

 

 

 

 

 

 

 

 

 

 

ZZ pin has an internal pull-down.

 

 

 

 

 

 

 

 

 

DQs

 

I/O-

Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the

 

 

 

 

 

 

 

 

 

 

 

Synchronous

rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the

 

 

 

 

 

 

 

 

 

 

 

 

 

addresses presented during the previous clock rise of the Read cycle. The direction of the pins is

 

 

 

 

 

 

 

 

 

 

 

 

 

controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs are placed

 

 

 

 

 

 

 

 

 

 

 

 

 

in a tri-state condition.

 

 

 

 

 

 

 

 

 

VDD

 

Power

Power supply inputs to the core of the device.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Supply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VSS

 

Ground

Ground for the core of the device.

 

 

 

 

 

 

 

 

 

VDDQ

I/O Power

Power supply for the I/O circuitry.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Supply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VSSQ

I/O Ground

Ground for the I/O circuitry.

 

 

 

 

 

 

 

 

 

MODE

 

Input-

Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating

 

 

 

 

 

 

 

 

 

 

 

 

Static

selects interleaved burst sequence. This is a strap pin and should remain static during device operation.

 

 

 

 

 

 

 

 

 

 

 

 

 

Mode Pin has an internal pull-up.

 

 

 

 

 

 

 

 

 

NC

 

 

No Connects. Not Internally connected to the die. 4M, 9M, 18M, 72M, 144M, 288M, 576M, and 1G are

 

 

 

 

 

 

 

 

 

 

 

 

 

address expansion pins and are not internally connected to the die.

 

 

 

 

 

 

 

Document #: 001-00210 Rev. *A

 

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Cypress CY7C1336H manual Pin Definitions

CY7C1336H specifications

The Cypress CY7C1336H is a high-performance static random-access memory (SRAM) device that has gained recognition for its outstanding speed and reliability. This component is widely used in various high-performance applications including networking, telecommunications, and industrial control systems, where fast data storage and retrieval are critical.

One of the main features of the CY7C1336H is its high-speed operation, offering access times of as low as 10 nanoseconds. This makes it ideal for applications that require quick response times and efficient processing. The device operates with a supply voltage of 2.5V, which not only helps in reducing power consumption but also enables its use in newer low-voltage systems.

The CY7C1336H boasts a capacity of 1 megabit, organized in a configuration of 128K words by 8 bits. This allows it to store a significant amount of data while maintaining a compact footprint. In addition to its size, the device supports a burst mode, which enhances its efficiency in handling data transfer operations. This feature is particularly useful in applications requiring continuous data streaming, such as video processing or high-speed networking.

The memory technology employed in the CY7C1336H is known for its robustness and durability. Unlike DRAM, SRAM does not require periodic refreshing, which simplifies system design and improves overall performance. The device also features fast output enable and chip enable options, providing greater flexibility in controlling memory access and improving overall system response time.

In terms of packaging, the CY7C1336H is available in various forms including 32-pin SOJ and 44-pin TSOP packages, catering to diverse design requirements. Its compact packaging and low thermal characteristics make it suitable for space-constrained applications.

Another noteworthy characteristic of this SRAM is its inherent data integrity and reliability. With features such as on-chip parity generation and error checking capabilities, the CY7C1336H ensures that the data stored remains accurate and consistent over time.

Overall, the Cypress CY7C1336H delivers a blend of high speed, low power consumption, and reliability, making it an excellent choice for designers looking to implement high-performance memory solutions in their applications. Its combination of lasting performance and advanced features secures its place in both current and future electronic designs.