PRELIMINARY

 

CY7C1336H

 

Capacitance[9]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

Description

 

Test Conditions

100 TQFP

 

Unit

 

 

 

Max.

 

 

CIN

 

 

Input Capacitance

 

TA = 25°C, f = 1 MHz,

5

 

pF

 

 

 

 

 

 

VDD = 3.3V, VDDQ = 3.3V

 

 

 

 

CCLK

 

 

Clock Input Capacitance

5

 

pF

 

CI/O

 

 

Input/Output Capacitance

 

5

 

pF

 

Thermal Resistance[9]

 

 

 

 

 

 

 

 

Parameter

 

 

Description

 

Test Conditions

100 TQFP

 

Unit

 

 

 

 

Package

 

 

ΘJA

Thermal Resistance

Test conditions follow standard test

30.32

 

°C/W

 

 

 

(Junction to Ambient)

methods and procedures for

 

 

 

 

 

 

 

 

 

 

measuring thermal impedance, per

 

 

 

 

ΘJC

Thermal Resistance

6.85

 

°C/W

 

EIA/JESD51

 

 

 

 

(Junction to Case)

 

 

 

 

 

 

AC Test Loads and Waveforms

3.3V I/O Test Load

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.3V

 

 

 

 

 

 

 

R = 317

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ

 

 

 

 

 

 

 

 

 

 

 

Z0

= 50

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL

= 50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10%

 

 

 

 

 

 

90%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

R = 351

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

1 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VL = 1.5V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a)

SCOPE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(c)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(b)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

9. Tested initially and after any design or process change that may affect these parameters.

90%

10%

1 ns

Document #: 001-00210 Rev. *A

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Cypress CY7C1336H manual Capacitance9, Thermal Resistance9, AC Test Loads and Waveforms, 3V I/O Test Load

CY7C1336H specifications

The Cypress CY7C1336H is a high-performance static random-access memory (SRAM) device that has gained recognition for its outstanding speed and reliability. This component is widely used in various high-performance applications including networking, telecommunications, and industrial control systems, where fast data storage and retrieval are critical.

One of the main features of the CY7C1336H is its high-speed operation, offering access times of as low as 10 nanoseconds. This makes it ideal for applications that require quick response times and efficient processing. The device operates with a supply voltage of 2.5V, which not only helps in reducing power consumption but also enables its use in newer low-voltage systems.

The CY7C1336H boasts a capacity of 1 megabit, organized in a configuration of 128K words by 8 bits. This allows it to store a significant amount of data while maintaining a compact footprint. In addition to its size, the device supports a burst mode, which enhances its efficiency in handling data transfer operations. This feature is particularly useful in applications requiring continuous data streaming, such as video processing or high-speed networking.

The memory technology employed in the CY7C1336H is known for its robustness and durability. Unlike DRAM, SRAM does not require periodic refreshing, which simplifies system design and improves overall performance. The device also features fast output enable and chip enable options, providing greater flexibility in controlling memory access and improving overall system response time.

In terms of packaging, the CY7C1336H is available in various forms including 32-pin SOJ and 44-pin TSOP packages, catering to diverse design requirements. Its compact packaging and low thermal characteristics make it suitable for space-constrained applications.

Another noteworthy characteristic of this SRAM is its inherent data integrity and reliability. With features such as on-chip parity generation and error checking capabilities, the CY7C1336H ensures that the data stored remains accurate and consistent over time.

Overall, the Cypress CY7C1336H delivers a blend of high speed, low power consumption, and reliability, making it an excellent choice for designers looking to implement high-performance memory solutions in their applications. Its combination of lasting performance and advanced features secures its place in both current and future electronic designs.