PRELIMINARY

CY7C1336H

 

 

 

 

 

 

 

 

 

 

 

Document History Page

 

 

 

 

 

 

 

 

 

 

 

Document Title: CY7C1336H 2-Mbit (64K x 32) Flow-Through Sync SRAM

 

 

Document Number: 001-00210

 

 

 

 

REV.

 

ECN NO.

Issue Date

Orig. of

Description of Change

 

 

Change

 

**

 

347377

 

See ECN

PCI

New Data Sheet

 

 

 

 

 

 

 

 

 

 

*A

 

428408

 

See ECN

NXR

Changed address of Cypress Semiconductor Corporation on Page# 1 from

 

 

 

 

 

 

 

 

“3901 North First Street” to “198 Champion Court”

 

 

 

 

 

 

 

 

Changed Three-State to Tri-State.

 

 

 

 

 

 

 

 

Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the

 

 

 

 

 

 

 

 

Electrical Characteristics Table.

 

 

 

 

 

 

 

 

 

Modified test condition from VIH

< VDD to VIH < VDD

 

 

 

 

 

 

 

 

Replaced Package Name column with Package Diagram in the Ordering

 

 

 

 

 

 

 

 

Information table.

 

 

 

 

 

 

 

 

 

Replaced Package Diagram of 51-85050 from *A to *B

 

Document #: 001-00210 Rev. *A

Page 15 of 15

[+] Feedback

Page 15
Image 15
Cypress CY7C1336H manual Document History, REV ECN no, Issue Date Orig. Description of Change

CY7C1336H specifications

The Cypress CY7C1336H is a high-performance static random-access memory (SRAM) device that has gained recognition for its outstanding speed and reliability. This component is widely used in various high-performance applications including networking, telecommunications, and industrial control systems, where fast data storage and retrieval are critical.

One of the main features of the CY7C1336H is its high-speed operation, offering access times of as low as 10 nanoseconds. This makes it ideal for applications that require quick response times and efficient processing. The device operates with a supply voltage of 2.5V, which not only helps in reducing power consumption but also enables its use in newer low-voltage systems.

The CY7C1336H boasts a capacity of 1 megabit, organized in a configuration of 128K words by 8 bits. This allows it to store a significant amount of data while maintaining a compact footprint. In addition to its size, the device supports a burst mode, which enhances its efficiency in handling data transfer operations. This feature is particularly useful in applications requiring continuous data streaming, such as video processing or high-speed networking.

The memory technology employed in the CY7C1336H is known for its robustness and durability. Unlike DRAM, SRAM does not require periodic refreshing, which simplifies system design and improves overall performance. The device also features fast output enable and chip enable options, providing greater flexibility in controlling memory access and improving overall system response time.

In terms of packaging, the CY7C1336H is available in various forms including 32-pin SOJ and 44-pin TSOP packages, catering to diverse design requirements. Its compact packaging and low thermal characteristics make it suitable for space-constrained applications.

Another noteworthy characteristic of this SRAM is its inherent data integrity and reliability. With features such as on-chip parity generation and error checking capabilities, the CY7C1336H ensures that the data stored remains accurate and consistent over time.

Overall, the Cypress CY7C1336H delivers a blend of high speed, low power consumption, and reliability, making it an excellent choice for designers looking to implement high-performance memory solutions in their applications. Its combination of lasting performance and advanced features secures its place in both current and future electronic designs.