PRELIMINARYCY7C1336H

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

–55°C to +125°C

Supply Voltage on VDD Relative to GND

........ –0.5V to +4.6V

DC Voltage Applied to Outputs

 

 

in Tri-State

–0.5V to VDDQ + 0.5V

DC Input Voltage

–0.5V to VDD + 0.5V

Electrical Characteristics Over the Operating Range [7, 8]

Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage

 

>2001V

(per MIL-STD-883, Method 3015)

 

 

Latch-up Current

 

>200 mA

Operating Range

 

 

 

 

 

 

 

 

 

Ambient

]

VDD

VDDQ

Range

Temperature

 

Commercial

0°C to +70°C

3.3V

3.3V –5%

 

 

5%/+10%

to VDD

Industrial

–40°C to +85°C

Parameter

Description

Test Conditions

Min.

Max.

Unit

VDD

Power Supply Voltage

 

 

3.135

3.6

V

VDDQ

I/O Supply Voltage

 

 

3.135

3.6

V

VOH

Output HIGH Voltage

for 3.3V I/O, IOH = –4.0 mA

 

2.4

 

V

VOL

Output LOW Voltage

for 3.3V I/O, IOL = 8.0 mA

 

 

0.4

V

VIH

Input HIGH Voltage

for 3.3V I/O

 

2.0

VDD + 0.3V

V

VIL

Input LOW Voltage[7]

for 3.3V I/O

 

–0.3

0.8

V

IX

Input Leakage Current

GND VI VDDQ

 

5

5

A

 

except ZZ and MODE

 

 

 

 

 

 

Input Current of MODE

Input = VSS

 

–30

 

A

 

 

Input = VDD

 

 

5

A

 

Input Current of ZZ

Input = VSS

 

–5

 

A

 

 

Input = VDD

 

 

30

A

IOZ

Output Leakage Current

GND VI VDDQ, Output Disabled

–5

5

A

IDD

VDD Operating Supply

VDD = Max., IOUT = 0 mA,

7.5-ns cycle, 133 MHz

 

225

mA

 

Current

f = fMAX= 1/tCYC

 

 

 

 

 

10-ns cycle, 100 MHz

 

205

mA

ISB1

Automatic CE Power-Down

Max. VDD, Device Deselected,

7.5-ns cycle, 133 MHz

 

90

mA

 

Current—TTL Inputs

VIN VIH or VIN VIL, f = fMAX,

 

 

 

 

 

10-ns cycle, 100 MHz

 

80

mA

 

 

inputs switching

 

 

 

 

ISB2

Automatic CE Power-Down

Max. VDD, Device Deselected,

All speeds

 

40

mA

 

Current—CMOS Inputs

VIN VDD – 0.3V or VIN 0.3V,

 

 

 

 

 

 

f = 0, inputs static

 

 

 

 

ISB3

Automatic CE Power-Down

Max. VDD, Device Deselected,

7.5-ns cycle, 133 MHz

 

75

mA

 

Current—CMOS Inputs

VIN VDDQ – 0.3V or VIN 0.3V,

 

 

 

 

 

10-ns cycle, 100 MHz

 

65

mA

 

 

f = fMAX, inputs switching

 

 

 

 

ISB4

Automatic CE Power-Down

Max. VDD, Device Deselected,

All speeds

 

45

mA

 

Current—TTL Inputs

VIN VDD – 0.3V or VIN 0.3V,

 

 

 

 

 

 

f = 0, inputs static

 

 

 

 

Notes:

 

 

 

 

 

 

7.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).

8.TPower-up: Assumes a linear ramp from 0v to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 001-00210 Rev. *A

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Cypress CY7C1336H manual Maximum Ratings, Operating Range, Ambient

CY7C1336H specifications

The Cypress CY7C1336H is a high-performance static random-access memory (SRAM) device that has gained recognition for its outstanding speed and reliability. This component is widely used in various high-performance applications including networking, telecommunications, and industrial control systems, where fast data storage and retrieval are critical.

One of the main features of the CY7C1336H is its high-speed operation, offering access times of as low as 10 nanoseconds. This makes it ideal for applications that require quick response times and efficient processing. The device operates with a supply voltage of 2.5V, which not only helps in reducing power consumption but also enables its use in newer low-voltage systems.

The CY7C1336H boasts a capacity of 1 megabit, organized in a configuration of 128K words by 8 bits. This allows it to store a significant amount of data while maintaining a compact footprint. In addition to its size, the device supports a burst mode, which enhances its efficiency in handling data transfer operations. This feature is particularly useful in applications requiring continuous data streaming, such as video processing or high-speed networking.

The memory technology employed in the CY7C1336H is known for its robustness and durability. Unlike DRAM, SRAM does not require periodic refreshing, which simplifies system design and improves overall performance. The device also features fast output enable and chip enable options, providing greater flexibility in controlling memory access and improving overall system response time.

In terms of packaging, the CY7C1336H is available in various forms including 32-pin SOJ and 44-pin TSOP packages, catering to diverse design requirements. Its compact packaging and low thermal characteristics make it suitable for space-constrained applications.

Another noteworthy characteristic of this SRAM is its inherent data integrity and reliability. With features such as on-chip parity generation and error checking capabilities, the CY7C1336H ensures that the data stored remains accurate and consistent over time.

Overall, the Cypress CY7C1336H delivers a blend of high speed, low power consumption, and reliability, making it an excellent choice for designers looking to implement high-performance memory solutions in their applications. Its combination of lasting performance and advanced features secures its place in both current and future electronic designs.