CY7C1411JV18, CY7C1426JV18

CY7C1413JV18, CY7C1415JV18

Pin Configuration

The pin configuration for CY7C1411JV18, CY7C1413JV18, and CY7C1415JV18 follows. [1] (continued)

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

CY7C1413JV18 (2M x 18)

 

 

1

 

 

2

3

4

 

 

5

 

6

 

 

7

 

8

 

9

10

11

A

 

 

 

 

 

NC/144M

A

 

 

 

 

 

1

 

 

 

 

 

NC/288M

 

 

 

A

NC/72M

CQ

 

CQ

WPS

BWS

K

RPS

B

 

 

NC

Q9

D9

 

A

 

NC

 

K

 

 

0

 

A

NC

NC

Q8

 

 

BWS

 

C

 

 

NC

NC

D10

 

VSS

 

A

NC

 

A

 

VSS

NC

Q7

D8

D

 

 

NC

D11

Q10

 

VSS

 

VSS

VSS

 

VSS

 

VSS

NC

NC

D7

E

 

 

NC

NC

Q11

VDDQ

 

VSS

VSS

 

VSS

VDDQ

NC

D6

Q6

F

 

 

NC

Q12

D12

VDDQ

 

VDD

VSS

 

VDD

VDDQ

NC

NC

Q5

G

 

 

NC

D13

Q13

VDDQ

 

VDD

VSS

 

VDD

VDDQ

NC

NC

D5

H

 

 

 

 

 

VREF

VDDQ

VDDQ

 

VDD

VSS

 

VDD

VDDQ

VDDQ

VREF

ZQ

DOFF

 

J

 

 

NC

NC

D14

VDDQ

 

VDD

VSS

 

VDD

VDDQ

NC

Q4

D4

K

 

 

NC

NC

Q14

VDDQ

 

VDD

VSS

 

VDD

VDDQ

NC

D3

Q3

L

 

 

NC

Q15

D15

VDDQ

 

VSS

VSS

 

VSS

VDDQ

NC

NC

Q2

M

 

 

NC

NC

D16

 

VSS

 

VSS

VSS

 

VSS

 

VSS

NC

Q1

D2

N

 

 

NC

D17

Q16

 

VSS

 

A

 

 

A

 

A

 

VSS

NC

NC

D1

P

 

 

NC

NC

Q17

 

A

 

A

 

C

 

A

 

A

NC

D0

Q0

R

 

TDO

TCK

A

 

A

 

A

 

 

 

 

 

 

A

 

A

A

TMS

TDI

 

 

 

C

 

 

CY7C1415JV18 (1M x 36)

 

 

1

 

 

2

3

4

 

5

 

6

 

 

 

7

 

8

 

9

10

11

A

 

 

 

 

 

NC/288M

NC/72M

 

 

 

 

 

2

 

 

 

 

 

 

 

1

 

 

 

A

NC/144M

CQ

 

CQ

WPS

BWS

K

BWS

RPS

B

 

Q27

Q18

D18

 

A

 

 

3

 

 

K

 

 

0

 

A

D17

Q17

Q8

 

BWS

 

 

BWS

 

C

 

D27

Q28

D19

 

VSS

 

A

NC

 

A

 

VSS

D16

Q7

D8

D

 

D28

D20

Q19

 

VSS

 

VSS

VSS

 

VSS

 

VSS

Q16

D15

D7

E

 

Q29

D29

Q20

VDDQ

 

VSS

VSS

 

VSS

VDDQ

Q15

D6

Q6

F

 

Q30

Q21

D21

VDDQ

 

VDD

VSS

 

VDD

VDDQ

D14

Q14

Q5

G

 

D30

D22

Q22

VDDQ

 

VDD

VSS

 

VDD

VDDQ

Q13

D13

D5

H

 

 

 

 

 

VREF

VDDQ

VDDQ

 

VDD

VSS

 

VDD

VDDQ

VDDQ

VREF

ZQ

DOFF

 

J

 

D31

Q31

D23

VDDQ

 

VDD

VSS

 

VDD

VDDQ

D12

Q4

D4

K

 

Q32

D32

Q23

VDDQ

 

VDD

VSS

 

VDD

VDDQ

Q12

D3

Q3

L

 

Q33

Q24

D24

VDDQ

 

VSS

VSS

 

VSS

VDDQ

D11

Q11

Q2

M

 

D33

Q34

D25

 

VSS

 

VSS

VSS

 

VSS

 

VSS

D10

Q1

D2

N

 

D34

D26

Q25

 

VSS

 

A

 

 

A

 

A

 

VSS

Q10

D9

D1

P

 

Q35

D35

Q26

 

A

 

A

 

C

 

A

 

A

Q9

D0

Q0

R

 

TDO

TCK

A

 

A

 

A

 

 

 

 

 

 

A

 

A

A

TMS

TDI

 

 

 

C

 

Document Number: 001-12557 Rev. *C

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Cypress CY7C1411JV18, CY7C1426JV18 manual CY7C1413JV18 2M x, Wps Bws, CY7C1415JV18 1M x

CY7C1413JV18, CY7C1426JV18, CY7C1411JV18, CY7C1415JV18 specifications

Cypress Semiconductor, known for its innovative memory solutions, offers a range of high-performance SRAM products suitable for a variety of applications. Among these are the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18, which feature advanced technologies and robust performance characteristics.

The CY7C1415JV18 is a 4-Mbit high-speed asynchronous SRAM. Designed for applications requiring fast data access, it boasts a maximum access time of just 10 ns. This product operates at a supply voltage of 1.8V, making it ideal for low-power systems. It supports a simple interface, allowing for easy integration into various digital systems. Enhanced data integrity is assured through support for write cycles and concurrent read operations, making it suitable for high-demand environments.

The CY7C1411JV18 is a 2-Mbit synchronous SRAM that offers high speed and low latency. Its access time is optimized for high-performance applications, reaching speeds of up to 10 ns as well. The device is designed with a flexible interface that accommodates both burst and non-burst operations, increasing data throughput for memory-intensive tasks. Like its counterparts, it operates on a low voltage, ensuring minimal power consumption.

Next, the CY7C1426JV18 also belongs to Cypress's high-performance SRAM family, providing 2-Mbit storage capacity with excellent read and write performance characteristics. This SRAM features an advanced design that supports pipelined operations, allowing multiple memory accesses to occur simultaneously. This feature effectively maximizes data transmission rates, making it particularly appealing for applications needing rapid data processing.

Finally, the CY7C1413JV18 offers 1-Mbit of SRAM capacity optimized for speed and efficiency. With an access time of 9 ns, it is among the fastest products in its category. The device features advanced functionalities enabling compatibility with various hardware configurations, thus facilitating its use in a wide array of embedded systems.

All these SRAM devices feature low power consumption, making them suitable for battery-operated devices and energy-efficient applications. Their ability to operate at lower voltages while maintaining high performance is a key characteristic that aligns with modern design requirements. The combination of speed, low power, and flexibility makes the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18 highly sought after in industries ranging from telecommunications to consumer electronics, solidifying Cypress's reputation as a leader in memory solutions.