CY7C1411JV18, CY7C1426JV18

CY7C1413JV18, CY7C1415JV18

Switching Characteristics

Over the Operating Range [22]

 

Cypress

Consortium

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Description

300 MHz

250 MHz

200 MHz

Unit

 

Parameter

Parameter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

Max

Min

Max

Min

Max

t

POWER

 

 

V (Typical) to the First Access [23]

1

 

1

 

1

 

ms

 

 

 

DD

 

 

 

 

 

 

 

tCYC

tKHKH

K Clock and C Clock Cycle Time

3.3

8.4

4.0

8.4

5.0

8.4

ns

tKH

tKHKL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.32

1.6

2.0

ns

Input Clock (K/K;

 

C/C) HIGH

tKL

tKLKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.32

1.6

2.0

ns

Input Clock (K/K;

 

C/C) LOW

tKHKH

tKHKH

K Clock Rise to

 

 

 

Clock Rise and C to

 

 

Rise

1.49

1.8

2.2

ns

K

C

 

 

 

 

 

(rising edge to rising edge)

 

 

 

 

 

 

 

tKHCH

tKHCH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

1.45

0

1.8

0

2.2

ns

K/K

 

Clock Rise to C/C Clock Rise (rising edge to rising edge)

Setup Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSA

tAVKH

Address Setup to K Clock Rise

0.4

0.5

0.6

ns

tSC

tIVKH

Control Setup to Clock (K,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

0.5

0.6

ns

K) Rise (RPS, WPS)

tSCDDR

tIVKH

Double Data Rate Control Setup to Clock (K, K) Rise

0.3

0.35

0.4

ns

 

 

 

 

 

(BWS0, BWS1, BWS2, BWS3)

 

 

 

 

 

 

 

tSD

tDVKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

0.35

0.4

ns

D[X:0] Setup to Clock (K/K)

 

 

Rise

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHA

tKHAX

Address Hold after Clock (K/K

) Rise

0.4

0.5

0.6

ns

tHC

tKHIX

Control Hold after Clock (K /K) Rise

(RPS,

 

WPS)

 

0.4

0.5

0.6

ns

tHCDDR

tKHIX

Double Data Rate Control Hold after Clock (K/K)

Rise

0.3

0.35

0.4

ns

 

 

 

 

 

(BWS0, BWS1, BWS2, BWS3)

 

 

 

 

 

 

 

tHD

tKHDX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise

0.3

0.35

0.4

ns

D[X:0] Hold after Clock (K/K)

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

tCHQV

C/C

Clock Rise (or K/K

in single clock mode) to Data Valid

0.45

0.45

0.45

ns

tDOH

tCHQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock Rise

–0.45

–0.45

–0.45

ns

Data Output Hold after Output C/C

 

 

 

 

 

(Active to Active)

 

 

 

 

 

 

 

tCCQO

tCHCQV

 

 

 

 

Clock Rise to Echo Clock Valid

0.45

0.45

0.45

ns

C/C

tCQOH

tCHCQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock Rise

–0.45

–0.45

–0.45

ns

Echo Clock Hold after C/C

tCQD

tCQHQV

Echo Clock High to Data Valid

 

0.27

 

0.3

 

0.35

ns

tCQDOH

tCQHQX

Echo Clock High to Data Invalid

–0.27

–0.3

–0.35

ns

t

CQH

t

Output Clock (CQ/CQ)

HIGH [24]

1.24

1.55

1.95

ns

 

CQHCQL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCQHCQH

 

tCQHCQH

 

CQ Clock Rise to

CQ

Clock Rise

1.24

1.55

1.95

ns

 

 

 

 

 

(rising edge to rising edge) [24]

 

 

 

 

 

 

 

tCHZ

tCHQZ

Clock (C and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.45

0.45

0.45

ns

C) Rise to High-Z (Active to High-Z) [25, 26]

tCLZ

tCHQX1

Clock (C and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

–0.45

–0.45

–0.45

ns

C) Rise to Low-Z [25, 26]

DLL Timing

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKC Var

tKC Var

Clock Phase Jitter

0.20

0.20

0.20

ns

tKC lock

tKC lock

DLL Lock Time (K, C)

1024

1024

1024

Cycles

tKC Reset

tKC Reset

K Static to DLL Reset

30

 

30

 

30

 

ns

Notes

23.This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD minimum initially before a read or write operation can be initiated.

24.These parameters are extrapolated from the input timing parameters (tKHKH - 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (tKC Var) ia already included in the tKHKH). These parameters are only guaranteed by design and are not tested in production

25.tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms. Transition is measured ± 100 mV from steady-state voltage.

26.At any given voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.

Document Number: 001-12557 Rev. *C

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Cypress CY7C1413JV18, CY7C1426JV18, CY7C1411JV18, CY7C1415JV18 manual Switching Characteristics, High, Low, DLL Timing

CY7C1413JV18, CY7C1426JV18, CY7C1411JV18, CY7C1415JV18 specifications

Cypress Semiconductor, known for its innovative memory solutions, offers a range of high-performance SRAM products suitable for a variety of applications. Among these are the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18, which feature advanced technologies and robust performance characteristics.

The CY7C1415JV18 is a 4-Mbit high-speed asynchronous SRAM. Designed for applications requiring fast data access, it boasts a maximum access time of just 10 ns. This product operates at a supply voltage of 1.8V, making it ideal for low-power systems. It supports a simple interface, allowing for easy integration into various digital systems. Enhanced data integrity is assured through support for write cycles and concurrent read operations, making it suitable for high-demand environments.

The CY7C1411JV18 is a 2-Mbit synchronous SRAM that offers high speed and low latency. Its access time is optimized for high-performance applications, reaching speeds of up to 10 ns as well. The device is designed with a flexible interface that accommodates both burst and non-burst operations, increasing data throughput for memory-intensive tasks. Like its counterparts, it operates on a low voltage, ensuring minimal power consumption.

Next, the CY7C1426JV18 also belongs to Cypress's high-performance SRAM family, providing 2-Mbit storage capacity with excellent read and write performance characteristics. This SRAM features an advanced design that supports pipelined operations, allowing multiple memory accesses to occur simultaneously. This feature effectively maximizes data transmission rates, making it particularly appealing for applications needing rapid data processing.

Finally, the CY7C1413JV18 offers 1-Mbit of SRAM capacity optimized for speed and efficiency. With an access time of 9 ns, it is among the fastest products in its category. The device features advanced functionalities enabling compatibility with various hardware configurations, thus facilitating its use in a wide array of embedded systems.

All these SRAM devices feature low power consumption, making them suitable for battery-operated devices and energy-efficient applications. Their ability to operate at lower voltages while maintaining high performance is a key characteristic that aligns with modern design requirements. The combination of speed, low power, and flexibility makes the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18 highly sought after in industries ranging from telecommunications to consumer electronics, solidifying Cypress's reputation as a leader in memory solutions.