CY7C1411JV18, CY7C1426JV18 CY7C1413JV18, CY7C1415JV18

includes forwarding data from a write cycle that was initiated on the previous K clock rise.

Read accesses and write access must be scheduled such that one transaction is initiated on any clock cycle. If both ports are selected on the same K clock rise, the arbitration depends on the previous state of the SRAM. If both ports were deselected, the read port takes priority. If a read was initiated on the previous cycle, the write port takes priority (as read operations can not be initiated on consecutive cycles). If a write was initiated on the previous cycle, the read port takes priority (as write operations can not be initiated on consecutive cycles). Therefore, asserting both port selects active from a deselected state results in alter- nating read or write operations being initiated, with the first access being a read.

Depth Expansion

The CY7C1413JV18 has a port select input for each port. This enables for easy depth expansion. Both port selects are sampled on the rising edge of the positive input clock only (K). Each port select input can deselect the specified port. Deselecting a port does not affect the other port. All pending transactions (read and write) completes prior to the device being deselected.

Programmable Impedance

An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5X the value of the intended line impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching with a tolerance

of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The output impedance is adjusted every 1024 cycles upon power up to account for drifts in supply voltage and temperature.

Echo Clocks

Echo clocks are provided on the QDR-II to simplify data capture on high speed systems. Two echo clocks are generated by the QDR-II. CQ is referenced with respect to C and CQ is referenced with respect to C. These are free running clocks and are synchro- nized to the output clock of the QDR-II. In the single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timings for the echo clocks are shown in the Switching Characteristics on page 23.

DLL

These chips use a Delay Lock Loop (DLL) that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the DLL gets locked after 1024 cycles of stable clock. The DLL can also be reset by slowing or stopping the input clock K and K for a minimum of 30 ns. However, it is not necessary to reset the DLL to lock to the desired frequency. The DLL automatically locks 1024 clock cycles after a stable clock is presented. The DLL may be disabled by applying ground to the DOFF pin. When the DLL is turned off, the device behaves in QDR-I mode (with one cycle latency and a longer access time). For information refer to the application note “DLL Considerations in QDRII/DDRII”.

Application Example

 

 

 

 

 

 

 

 

 

 

Figure 1 shows four QDR-II used in an application.

 

 

 

 

 

 

 

 

 

 

 

Figure 1. Application Example

 

 

 

 

 

 

 

 

SRAM #1

ZQ

R = 250ohms

 

SRAM #4

ZQ

R = 250ohms

 

Vt

 

R W B

 

CQ/CQ#

 

R W B

 

CQ/CQ#

 

 

 

D

P P W

 

Q

D

P

P W

 

Q

 

 

R

S S S

 

S

S S

 

 

 

A

# # #

C C# K K#

A

# # #

C C# K K#

 

 

DATA IN

 

 

 

 

 

 

 

 

 

 

 

DATA OUT

 

 

 

 

 

Vt

 

 

 

 

 

Address

 

 

 

 

 

Vt

 

 

 

 

BUS

RPS#

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WPS#

 

 

 

 

 

 

 

 

 

 

MASTER

 

 

 

 

 

 

 

 

 

 

BWS#

 

 

 

 

 

 

 

 

 

 

(CPU

 

 

 

 

 

 

 

 

 

 

CLKIN/CLKIN#

 

 

 

 

 

 

 

 

 

 

or

Source K

 

 

 

 

 

 

 

 

 

 

ASIC)

 

 

 

 

 

 

 

 

 

 

Source K#

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delayed K

 

 

 

 

 

 

 

 

 

 

 

Delayed K#

 

 

 

 

 

 

 

 

 

 

 

R

R = 50ohms

Vt = Vddq/2

 

 

 

 

 

 

 

Document Number: 001-12557 Rev. *C

Page 9 of 28

[+] Feedback

Page 9
Image 9
Cypress CY7C1411JV18, CY7C1426JV18 manual Application Example, Depth Expansion, Programmable Impedance, Echo Clocks, Sram #1

CY7C1413JV18, CY7C1426JV18, CY7C1411JV18, CY7C1415JV18 specifications

Cypress Semiconductor, known for its innovative memory solutions, offers a range of high-performance SRAM products suitable for a variety of applications. Among these are the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18, which feature advanced technologies and robust performance characteristics.

The CY7C1415JV18 is a 4-Mbit high-speed asynchronous SRAM. Designed for applications requiring fast data access, it boasts a maximum access time of just 10 ns. This product operates at a supply voltage of 1.8V, making it ideal for low-power systems. It supports a simple interface, allowing for easy integration into various digital systems. Enhanced data integrity is assured through support for write cycles and concurrent read operations, making it suitable for high-demand environments.

The CY7C1411JV18 is a 2-Mbit synchronous SRAM that offers high speed and low latency. Its access time is optimized for high-performance applications, reaching speeds of up to 10 ns as well. The device is designed with a flexible interface that accommodates both burst and non-burst operations, increasing data throughput for memory-intensive tasks. Like its counterparts, it operates on a low voltage, ensuring minimal power consumption.

Next, the CY7C1426JV18 also belongs to Cypress's high-performance SRAM family, providing 2-Mbit storage capacity with excellent read and write performance characteristics. This SRAM features an advanced design that supports pipelined operations, allowing multiple memory accesses to occur simultaneously. This feature effectively maximizes data transmission rates, making it particularly appealing for applications needing rapid data processing.

Finally, the CY7C1413JV18 offers 1-Mbit of SRAM capacity optimized for speed and efficiency. With an access time of 9 ns, it is among the fastest products in its category. The device features advanced functionalities enabling compatibility with various hardware configurations, thus facilitating its use in a wide array of embedded systems.

All these SRAM devices feature low power consumption, making them suitable for battery-operated devices and energy-efficient applications. Their ability to operate at lower voltages while maintaining high performance is a key characteristic that aligns with modern design requirements. The combination of speed, low power, and flexibility makes the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18 highly sought after in industries ranging from telecommunications to consumer electronics, solidifying Cypress's reputation as a leader in memory solutions.