Cypress nvSRAM Data Retention and Endurance, Capacitance, Thermal Resistance, AC Test Conditions

PRELIMINARY

CY14B102L, CY14B102N

Data Retention and Endurance

Parameter	Description	Min	Unit
DATAR	Data Retention	20	Years
NVC	Nonvolatile STORE Operations	200	K

Capacitance

In the following table, the capacitance parameters are listed.[14]

Parameter	Description	Test Conditions	Max	Unit
CIN	Input Capacitance	TA = 25°C, f = 1 MHz,	7	pF
		VCC = 0 to 3.0V
COUT	Output Capacitance		7	pF

Thermal Resistance

In the following table, the thermal resistance parameters are listed. [14]

Parameter	Description	Test Conditions	48-FBGA	44-TSOP II	54-TSOP II	Unit
ΘJA	Thermal Resistance	Test conditions follow standard test methods	28.82	31.11	30.73	°C/W
	(Junction to Ambient)	and procedures for measuring thermal
		impedance, in accordance with EIA/JESD51.
ΘJC	Thermal Resistance		7.84	5.56	6.08	°C/W
	(Junction to Case)
		Figure 5. AC Test Loads

3.0V	577Ω
	R1
OUTPUT

30 pF

577Ω for tri-state specs

3.0V

R1

OUTPUT

R2	5 pF	R2
789Ω		789Ω

AC Test Conditions

Input Pulse Levels	0V to 3V
Input Rise and Fall Times (10% - 90%)	<3 ns
Input and Output Timing Reference Levels	1.5V

Note

14. These parameters are guaranteed but not tested.

Document #: 001-45754 Rev. *B Page 8 of 24

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