PRELIMINARY

CY14B102L, CY14B102N

Document History Page

Document Title: CY14B102L/CY14B102N 2 Mbit (256K x 8/128K x 16) nvSRAM

Document Number: 001-45754

Rev.

ECN No.

Submission

Orig. of Change

 

Description of Change

Date

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

**

2470086

GVCH

 

New Data Sheet

 

 

 

 

 

*A

2522209

GVCH/AESA

06/27/2008

Added Automotive temperature Range and 20 ns access speed information

 

 

 

 

in “Features”.

 

 

 

 

Added ICC1 for automotive temperature range.

 

 

 

 

Added ICC1 for tRC=20 ns for both industrial and Commercial temperature

 

 

 

 

Grade.

 

 

 

 

Updated Thermal resistance values for 48-FBGA, 44-TSOP II and 54-TSOP

 

 

 

 

II Packages.

 

 

 

 

Added AC Switching Characteristics specs for 20 ns access speed.

 

 

 

 

Added software controlled STORE/RECALL cycle specs for 20 ns access

 

 

 

 

speed.

 

 

 

 

Updated ordering information and part numbering nomenclature.

 

 

 

 

Updated data sheet template.

 

 

 

 

 

*B

2606696

GVCH/PYRS

11/13/08

Removed 15 ns access speed

 

 

 

 

Updated Logic block diagram

 

 

 

 

Updated footnote 1

 

 

 

 

Added footnote 2 and 7

 

 

 

 

Pin definition: Updated

WE,

 

HSB

and NC pin description

 

 

 

 

Page 4:Updated SRAM READ, SRAM WRITE, Autostore operation descrip-

 

 

 

 

tion

 

 

 

 

Page 4: Updated Hardware store operation

 

 

 

 

Page 5: Hardware RECALL (Power-up) description

 

 

 

 

Page 6:updated Data protection description

 

 

 

 

Maximum Ratings: Added Max. Accumulated storage time

 

 

 

 

Changed ICC2 from 6mA to 10mA

 

 

 

 

Changed ICC4 from 6mA to 5mA

 

 

 

 

Changed ISB from 3mA to 5mA

 

 

 

 

Updated ICC1, ICC3 , ISBand IOZ Test conditions

 

 

 

 

Changed VCAP max value from 82uf to 180uF

 

 

 

 

Updated footnote 11and 12

 

 

 

 

Added footnote 13

 

 

 

 

Added Data retention and Endurance Table

 

 

 

 

Updated Input Rise and Fall time in AC test Conditions

 

 

 

 

Referenced footnote 16 to tOHA parameter

 

 

 

 

Updated All switching waveforms

 

 

 

 

 

 

 

 

Added Figure 10 (SRAM WRITE CYCLE:BHE

and BLE controlled)

 

 

 

 

Changed tDELAY to 20ns, 25ns, 25ns for 20ns, 25ns, 45ns part respectively

 

 

 

 

Changed tSTORE from 15ms to 8ms

 

 

 

 

Added VHDIS, tHHHD and tLZHSB parameters

 

 

 

 

Updated footnote 22 and 23

 

 

 

 

Added footnote 25

 

 

 

 

Software controlled STORE/RECALL cycle table: Changed tAS to tSA

 

 

 

 

Changed tGHAX to tHA

 

 

 

 

Added tDHSB parameter

 

 

 

 

Changed tHLHX to tPHSB

 

 

 

 

Updated tSS from 70us to 100us

 

 

 

 

Added Truth table for SRAM operations

 

 

 

 

Updated ordering information and part numbering nomenclature

 

 

 

 

 

 

 

 

 

 

 

 

 

Document #: 001-45754 Rev. *B

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Cypress CY14B102L, nvSRAM manual Document History, Gvch/Aesa, Gvch/Pyrs

CY14B102L, nvSRAM specifications

Cypress nvSRAM CY14B102L is a sophisticated memory solution designed to bridge the gap between volatile and non-volatile memory technologies. This device offers a unique blend of SRAM speed with the non-volatility of Flash memory, making it an ideal choice for applications that require data retention without the need for continuous power.

One of the standout features of the CY14B102L is its ability to retain data for over 20 years without power, thanks to its innovative non-volatile SRAM technology. This means that critical information can be stored safely during power outages or system failures, ensuring data integrity in mission-critical applications. The device uses a reliable, self-timed write process, which simplifies the write operation and enhances system efficiency by eliminating the need for complex write management processes.

With a capacity of 1 megabit (128 K x 8), the CY14B102L offers ample storage for a wide variety of applications. Its fast access times, typically around 45 ns, make it suitable for high-speed operations typically associated with SRAMs. This rapid access is paramount for real-time applications where delays can lead to critical failures or data corruption.

The CY14B102L utilizes a CMOS process technology that not only contributes to its low power consumption but also ensures high reliability and durability. Operating in the wide temperature range of -40°C to +125°C, this nvSRAM is well-suited for automotive, industrial, and telecommunications applications.

In terms of connectivity, the CY14B102L supports a standard SRAM interface, simplifying integration into existing systems. Additionally, its ease of use is further enhanced by being available in a variety of package options, allowing designers to select the best fit for their needs without compromising on performance.

In conclusion, the Cypress nvSRAM CY14B102L is a powerful memory device that combines the speed of SRAM with non-volatile storage capabilities. With its extended data retention, fast access times, efficient write processes, and robust design, it is an excellent choice for applications that demand both speed and reliability, making it an invaluable asset for engineers looking to optimize system performance while maintaining data integrity.