PRELIMINARY

CY14B102L, CY14B102N

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Maximum Accumulated Storage Time

 

............At 150°C Ambient Temperature

1000h

............At 85°C Ambient Temperature

20 Years

Ambient Temperature with

 

Power Applied

–55°C to +150°C

Supply Voltage on VCC Relative to GND

..........–0.5V to 4.1V

Voltage Applied to Outputs

–0.5V to VCC + 0.5V

in High-Z State

Input Voltage

–0.5V to Vcc + 0.5V

Transient Voltage (<20 ns) on

 

Any Pin to Ground Potential

–2.0V to VCC + 2.0V

Package Power Dissipation

 

Capability (TA = 25°C)

1.0W

Surface Mount Pb Soldering

 

Temperature (3 Seconds)

+260°C

DC Output Current (1 output at a time, 1s duration).... 15 mA

Static Discharge Voltage

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch Up Current

...................................................

> 200 mA

Operating Range

 

 

 

 

 

Range

 

Ambient Temperature

VCC

Commercial

 

0°C to +70°C

2.7V to 3.6V

 

 

 

 

Industrial

 

–40°C to +85°C

2.7V to 3.6V

 

 

 

 

Automotive

 

–40°C to +125°C

2.7V to 3.6V

 

 

 

 

DC Electrical Characteristics

Over the Operating Range (VCC = 2.7V to 3.6V)

Parameter

Description

 

 

 

 

 

 

 

Test Conditions

Min

Max

Unit

ICC1

Average VCC Current

tRC = 20 ns

 

 

 

 

 

 

 

 

 

 

Commercial

 

65

mA

 

 

tRC = 25 ns

 

 

 

 

 

 

 

 

 

 

 

 

65

mA

 

 

tRC = 45 ns

 

 

 

 

 

 

 

 

 

 

 

 

50

mA

 

 

Values obtained without output loads (IOUT = 0 mA)

Industrial

 

70

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

52

mA

 

 

tRC = 25 ns

 

 

 

 

 

 

 

 

 

 

Automotive

 

90

mA

 

 

tRC = 45 ns

 

 

 

 

 

 

 

 

 

 

 

 

75

mA

 

 

Values obtained without output loads (IOUT = 0 mA)

 

 

 

 

ICC2

Average VCC Current

All Inputs Don’t Care, VCC = Max

 

 

10

mA

 

during STORE

Average current for duration tSTORE

 

 

 

ICC3[11]

Average VCC Current at

All I/P cycling at CMOS levels.

 

35

mA

 

tRC= 200 ns, 3V, 25°C

Values obtained without output loads (IOUT = 0 mA).

 

 

 

 

typical

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC4

Average VCAP Current

All Inputs Don’t Care, VCC = Max

 

5

mA

 

during AutoStore Cycle

Average current for duration tSTORE

 

 

 

ISB

VCC Standby Current

CE > (VCC – 0.2). All others VIN < 0.2V or > (VCC – 0.2V). Standby

 

5

mA

 

 

current level after nonvolatile cycle is complete.

 

 

 

I [12]

 

Inputs are static. f = 0 MHz.

 

 

 

Input Leakage Current

V

CC

= Max, V

SS

< V

IN

< V

CC

–1

+1

μA

IX

(except HSB)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Leakage Current

VCC = Max, VSS < VIN < VCC

–100

+1

μA

 

(for HSB)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Off-State Output

VCC

=

Max, VSS < VOUT < VCC,

CE

or

OE

> VIH or

BHE/BLE > VIH

–1

+1

μA

 

Leakage Current

or WE < VIL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

VCC +

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

VIL

Input LOW Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vss – 0.5

0.8

V

VOH

Output HIGH Voltage

IOUT = –2 mA

 

 

 

 

 

 

 

 

 

 

 

2.4

 

V

VOL

Output LOW Voltage

IOUT = 4 mA

 

 

 

 

 

 

 

 

 

 

 

 

0.4

V

VCAP[13]

Storage Capacitor

Between VCAP pin and VSS, 5V Rated

61

180

μF

Notes

11.Typical conditions for the active current shown on the DC Electrical characteristics are average values at 25°C (room temperature), and VCC = 3V. Not 100% tested.

12.The HSB pin has IOUT = -2 uA for VOH of 2.4V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This parameter is characterized but not tested.

13.VCAP (Storage capacitor) nominal value is 68uF.

Document #: 001-45754 Rev. *B

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Cypress CY14B102L, nvSRAM manual Maximum Ratings, Operating Range, DC Electrical Characteristics

CY14B102L, nvSRAM specifications

Cypress nvSRAM CY14B102L is a sophisticated memory solution designed to bridge the gap between volatile and non-volatile memory technologies. This device offers a unique blend of SRAM speed with the non-volatility of Flash memory, making it an ideal choice for applications that require data retention without the need for continuous power.

One of the standout features of the CY14B102L is its ability to retain data for over 20 years without power, thanks to its innovative non-volatile SRAM technology. This means that critical information can be stored safely during power outages or system failures, ensuring data integrity in mission-critical applications. The device uses a reliable, self-timed write process, which simplifies the write operation and enhances system efficiency by eliminating the need for complex write management processes.

With a capacity of 1 megabit (128 K x 8), the CY14B102L offers ample storage for a wide variety of applications. Its fast access times, typically around 45 ns, make it suitable for high-speed operations typically associated with SRAMs. This rapid access is paramount for real-time applications where delays can lead to critical failures or data corruption.

The CY14B102L utilizes a CMOS process technology that not only contributes to its low power consumption but also ensures high reliability and durability. Operating in the wide temperature range of -40°C to +125°C, this nvSRAM is well-suited for automotive, industrial, and telecommunications applications.

In terms of connectivity, the CY14B102L supports a standard SRAM interface, simplifying integration into existing systems. Additionally, its ease of use is further enhanced by being available in a variety of package options, allowing designers to select the best fit for their needs without compromising on performance.

In conclusion, the Cypress nvSRAM CY14B102L is a powerful memory device that combines the speed of SRAM with non-volatile storage capabilities. With its extended data retention, fast access times, efficient write processes, and robust design, it is an excellent choice for applications that demand both speed and reliability, making it an invaluable asset for engineers looking to optimize system performance while maintaining data integrity.