Cypress STK14C88-5 manual Maximum Ratings, Operating Range, DC Electrical Characteristics

Models: STK14C88-5

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STK14C88-5

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Temperature under Bias

–55°C to +125°C

Voltage on Input Relative to GND

–0.5V to 7.0V

Voltage on Input Relative to Vss

–0.6V to VCC + 0.5V

 

 

 

Voltage on DQ0-7or HSB

.......................–0.5V to Vcc + 0.5V

Power Dissipation

1.0W

DC output Current (1 output at a time, 1s duration) .... 15 mA

Operating Range

Range

Ambient Temperature

VCC

Military

-55°C to +125°C

4.5V to 5.5V

 

 

 

DC Electrical Characteristics

Over the operating range (VCC = 4.5V to 5.5V) [6]

Parameter

Description

 

 

 

 

 

Test Conditions

Min

Max

Unit

ICC1

Average VCC Current

tRC = 35 ns

 

85

mA

 

 

 

 

 

 

tRC = 45 ns

 

70

mA

 

 

 

 

 

 

Dependent on output loading and cycle rate. Values obtained

 

 

 

 

 

 

 

 

 

without output loads.

 

 

 

 

 

 

 

 

 

IOUT = 0 mA.

 

 

 

ICC2

Average VCC Current

 

All Inputs Do Not Care, VCC = Max

 

3

mA

 

 

during STORE

 

Average current for duration tSTORE

 

 

 

ICC3

Average VCC Current at

 

WE

> (VCC – 0.2V). All other inputs cycling.

 

10

mA

 

 

tRC= 200 ns, 5V, 25°C

 

Dependent on output loading and cycle rate. Values obtained

 

 

 

 

 

Typical

 

without output loads.

 

 

 

ICC4

Average VCAP Current

 

All Inputs Do Not Care, VCC = Max

 

2

mA

 

 

during AutoStore Cycle

 

Average current for duration tSTORE

 

 

 

I

[7]

VCC Standby Current

 

tRC = 35 ns,

CE

> VIH

 

26

mA

SB1

 

(Standby, Cycling TTL

 

tRC = 45 ns, CE > VIH

 

23

mA

 

 

 

 

 

 

Input Levels)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

[7]

VCC Standby Current

 

CE

> (VCC – 0.2V). All others VIN < 0.2V or > (VCC – 0.2V).

 

1.5

mA

SB2

 

 

 

 

 

Standby current level after nonvolatile cycle is complete.

 

 

 

 

 

 

 

 

 

Inputs are static. f = 0 MHz.

 

 

 

 

 

 

 

 

 

 

IIX

 

Input Leakage Current

VCC = Max, VSS < VIN < VCC

-1

+1

μA

IOZ

 

Off State Output Leakage

 

VCC = Max, VSS < VIN < VCC,

CE

or

OE

> VIH or

WE

< VIL

-5

+5

μA

 

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

 

Input HIGH Voltage

 

 

 

 

 

 

 

 

 

 

 

 

2.2

VCC +

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

VIL

 

Input LOW Voltage

 

 

 

 

 

 

 

 

 

 

 

 

VSS

0.8

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

VOH

Output HIGH Voltage

IOUT = –4 mA

2.4

 

V

VOL

 

Output LOW Voltage

IOUT = 8 mA

 

0.4

V

VBL

 

Logic ‘0’ Voltage on

HSB

 

 

IOUT = 3 mA

 

0.4

V

 

 

Output

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCAP

Storage Capacitor

Between VCAP pin and Vss, 6V rated. 68 µF +20% nom.

54

260

uF

Data Retention and Endurance

 

 

 

Parameter

Description

Min

Unit

DATAR

Data Retention

100

Years

NVC

Nonvolatile STORE Operations

1,000

K

Notes

6.VCC reference levels throughout this data sheet refer to VCC if that is where the power supply connection is made, or VCAP if VCC is connected to ground.

7.CE > VIH does not produce standby current levels until any nonvolatile cycle in progress has timed out.

Document Number: 001-51038 Rev. **

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Cypress STK14C88-5 manual Maximum Ratings, Operating Range, DC Electrical Characteristics, Data Retention and Endurance

STK14C88-5 specifications

The Cypress STK14C88-5 is a high-performance, non-volatile static random-access memory (SRAM) solution that caters to a wide range of applications. This device seamlessly combines the benefits of SRAM technology with non-volatile memory, making it a compelling option for embedded systems requiring fast access speeds alongside persistent data storage.

One of the key features of the STK14C88-5 is its memory density. This chip comes with an 88 Kbit storage capacity, which is ample for various applications, including configuration storage and data logging in industrial systems, telecommunications, and consumer electronics. The memory is organized in a way that supports both byte-wise and word-wise access, ensuring flexibility to accommodate different data structures.

Speed is another attractive characteristic of the STK14C88-5. It operates at access speeds of up to 55 nanoseconds, providing quick read and write capabilities. This rapid performance is crucial for time-sensitive applications, enabling the device to handle real-time data processing effectively. The SRAM also supports a wide operating voltage range from 2.7V to 5.5V, making it versatile for different power supply configurations.

The device utilizes advanced technology to enhance reliability and endurance. The STK14C88-5 features built-in EEPROM technology, which allows it to retain data even when power is lost. This non-volatility is ideal for critical applications where data integrity is paramount.

In terms of interface, the STK14C88-5 provides a simple parallel interface, ensuring compatibility with various microcontrollers and processors. It also has control signals that support straightforward data read and write operations, allowing designers to integrate it easily into their existing architectures.

Moreover, the Cypress STK14C88-5 incorporates low-power consumption features, making it suitable for battery-operated devices. Its efficient power management ensures minimal energy usage without compromising performance, which is crucial in today’s energy-conscious environment.

Overall, the Cypress STK14C88-5 stands out with its combination of non-volatile storage, high-speed access, flexibility of operation, and power efficiency. These features make it an ideal choice for applications that demand reliable memory solutions with fast data processing capabilities, solidifying its position as a valuable component in the semiconductor industry.