Unbuffered SODIMM

datasheet

Rev. 1.0

DDR3 SDRAM

10. AC & DC Input Measurement Levels

10.1 AC & DC Logic Input Levels for Single-ended Signals

[ Table 1 ] Single-ended AC & DC input levels for Command and Address

Symbol

Parameter

 

DDR3-800/1066/1333/1600

Unit

NOTE

Min.

 

Max.

 

 

 

 

 

VIH.CA(DC100)

DC input logic high

VREF + 100

 

VDD

mV

1,5

VIL.CA(DC100)

DC input logic low

VSS

 

VREF - 100

mV

1,6

VIH.CA(AC175)

AC input logic high

VREF + 175

 

-

mV

1,2,7

VIL.CA(AC175)

AC input logic low

-

 

VREF - 175

mV

1,2,8

VIH.CA(AC150)

AC input logic high

VREF+150

 

-

mV

1,2,7

VIL.CA(AC150)

AC input logic low

-

 

VREF-150

mV

1,2,8

VREFCA(DC)

Reference Voltage for ADD,

0.49*VDD

 

0.51*VDD

V

3,4

CMD inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOTE :

1.For input only pins except RESET, VREF = VREFCA(DC)

2.See ’Overshoot/Undershoot Specification’ on page 18.

3.The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)

4.For reference : approx. VDD/2 ± 15mV

5.VIH(dc) is used as a simplified symbol for VIH.CA(DC100)

6.VIL(dc) is used as a simplified symbol for VIL.CA(DC100)

7.VIH(ac) is used as a simplified symbol for VIH.CA(AC175) and VIH.CA(AC150); VIH.CA(AC175) value is used when VREF + 175mV is referenced and VIH.CA(AC150) value is used when VREF + 150mV is referenced.

8.VIL(ac) is used as a simplified symbol for VIL.CA(AC175) and VIL.CA(AC150); VIL.CA(AC175) value is used when VREF - 175mV is referenced and VIL.CA(AC150) value is used when VREF - 150mV is referenced.

[ Table 2 ] Single-ended AC & DC input levels for DQ and DM

Symbol

Parameter

DDR3-800/1066

DDR3-1333/1600

Unit

NOTE

Min.

Max.

Min.

Max.

 

 

 

 

VIH.DQ(DC100)

DC input logic high

VREF + 100

VDD

VREF + 100

VDD

mV

1,5

VIL.DQ(DC100)

DC input logic low

VSS

VREF - 100

VSS

VREF - 100

mV

1,6

VIH.DQ(AC175)

AC input logic high

VREF + 175

-

-

-

mV

1,2,7

VIL.DQ(AC175)

AC input logic low

-

VREF - 175

-

-

mV

1,2,8

VIH.DQ(AC150)

AC input logic high

VREF + 150

NOTE 2

VREF + 150

NOTE 2

mV

1,2,7

VIL.DQ(AC150)

AC input logic low

NOTE 2

VREF - 150

NOTE 2

VREF - 150

mV

1,2,8

VREFDQ(DC)

Reference Voltage for DQ,

0.49*VDD

0.51*VDD

0.49*VDD

0.51*VDD

V

3,4

DM inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOTE :

1.For input only pins except RESET, VREF = VREFDQ(DC)

2.See ’Overshoot/Undershoot Specification’ on page 18.

3.The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)

4.For reference : approx. VDD/2 ± 15mV

5.VIH(dc) is used as a simplified symbol for VIH.DQ(DC100)

6.VIL(dc) is used as a simplified symbol for VIL.DQ(DC100)

7.VIH(ac) is used as a simplified symbol for VIH.DQ(AC175), VIH.DQ(AC150) ; VIH.DQ(AC175) value is used when VREF + 175mV is referenced, VIH.DQ(AC150) value is used when VREF + 150mV is referenced.

8.VIL(ac) is used as a simplified symbol for VIL.DQ(AC175), VIL.DQ(AC150) ; VIL.DQ(AC175) value is used when VREF - 175mV is referenced, VIL.DQ(AC150) value is used when VREF - 150mV is referenced.

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Samsung M471B1G73AH0 AC & DC Input Measurement Levels, 10.1 AC & DC Logic Input Levels for Single-ended Signals

M471B1G73AH0 specifications

The Samsung M471B1G73AH0 is a high-performance DDR4 SO-DIMM memory module designed for laptops and compact systems. This specific RAM chip showcases a balance of speed, efficiency, and reliability, making it an ideal choice for both everyday users and professionals seeking enhanced system performance.

One of the main features of the M471B1G73AH0 is its capacity. With 8GB of memory, it provides ample space for multitasking, allowing users to run multiple applications simultaneously without experiencing slowdowns. This is particularly beneficial for users who require a robust performance for tasks such as video editing, gaming, or running virtual machines.

The module operates at a frequency of 2400 MHz, tapping into the capabilities of DDR4 technology. This frequency ensures that data can be transferred quickly, enhancing overall system responsiveness. The DDR4 specification also brings improvements in power efficiency compared to its predecessor, DDR3, resulting in lower energy consumption and prolonged battery life in portable devices.

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