Samsung M471B1G73AH0 specifications DDR3-1333 Speed Bins, DDR3-1333 CL-nRCD-nRP

Unbuffered SODIMM

datasheet

Rev. 1.0

DDR3 SDRAM

[ Table 15 ] DDR3-1333 Speed Bins

Speed				DDR3-1333
CL-nRCD-nRP				9 -9 - 9		Units	NOTE
Parameter		Symbol	min		max
Internal read command to first data		tAA	13.5		20	ns
			(13.125)8
ACT to internal read or write delay time		tRCD	13.5		-	ns
			(13.125)8
PRE command period		tRP	13.5		-	ns
			(13.125)8
ACT to ACT or REF command period		tRC	49.5		-	ns
			(49.125)8
ACT to PRE command period		tRAS	36		9*tREFI	ns
CL = 5	CWL = 5	tCK(AVG)	3.0		3.3	ns	1,2,3,4,6,9,10
	CWL = 6,7	tCK(AVG)		Reserved		ns	4
	CWL = 5	tCK(AVG)	2.5		3.3	ns	1,2,3,6
CL = 6	CWL = 6	tCK(AVG)		Reserved		ns	1,2,3,4,6
	CWL = 7	tCK(AVG)		Reserved		ns	4
	CWL = 5	tCK(AVG)		Reserved		ns	4
CL = 7	CWL = 6	tCK(AVG)	1.875		<2.5	ns	1,2,3,4,6
	CWL = 7	tCK(AVG)		Reserved		ns	1,2,3,4
	CWL = 5	tCK(AVG)		Reserved		ns	4
CL = 8	CWL = 6	tCK(AVG)	1.875		<2.5	ns	1,2,3,6
	CWL = 7	tCK(AVG)		Reserved		ns	1,2,3,4
CL = 9	CWL = 5,6	tCK(AVG)		Reserved		ns	4
	CWL = 7	tCK(AVG)	1.5		<1.875	ns	1,2,3,4,8
CL = 10	CWL = 5,6	tCK(AVG)		Reserved		ns	4
	CWL = 7	tCK(AVG)		Reserved		ns	1,2,3
Supported CL Settings				5,6,7,8,9		nCK
Supported CWL Settings				5,6,7		nCK

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