Samsung M471B1G73AH0 specifications Electrical Characteristics and AC timing

Unbuffered SODIMM

datasheet

Rev. 1.0

DDR3 SDRAM

15. Electrical Characteristics and AC timing

(0 °C<TCASE ≤95 °C, VDDQ = 1.5V ± 0.075V; VDD = 1.5V ± 0.075V)

15.1 Refresh Parameters by Device Density

Parameter			Symbol	1Gb	2Gb	4Gb	8Gb	Units	NOTE
All Bank Refresh to active/refresh cmd time			tRFC	110	160	300	350	ns
Average periodic refresh interval	tREFI	0 °C ≤ TCASE ≤ 85°C		7.8	7.8	7.8	7.8	μs
		85	°C < TCASE ≤ 95°C	3.9	3.9	3.9	3.9	μs	1

NOTE :

1.Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or requirements referred to in this material.

15.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin

Speed	DDR3-800	DDR3-1066	DDR3-1333	DDR3-1600
Bin (CL - tRCD - tRP)	6-6-6	7-7-7	9-9-9	11-11-11	Units	NOTE
Parameter	min	min	min	min
CL	6	7	9	11	tCK
tRCD	15	13.13	13.5	13.75	ns
tRP	15	13.13	13.5	13.75	ns
tRAS	37.5	37.5	36	35	ns
tRC	52.5	50.63	49.5	48.75	ns
tRRD	10	7.5	6.0	6.0	ns
tFAW	40	37.5	30	30	ns

15.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin

DDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.

[ Table 13 ] DDR3-800 Speed Bins

Speed				DDR3-800
CL-nRCD-nRP				6 - 6 - 6		Units	NOTE
Parameter		Symbol	min		max
Internal read command to first data		tAA	15		20	ns
ACT to internal read or write delay time		tRCD	15		-	ns
PRE command period		tRP	15		-	ns
ACT to ACT or REF command period		tRC	52.5		-	ns
ACT to PRE command period		tRAS	37.5		9*tREFI	ns
CL = 5	CWL = 5	tCK(AVG)	3.0		3.3	ns	1,2,3,4,9,10
CL = 6	CWL = 5	tCK(AVG)	2.5		3.3	ns	1,2,3
Supported CL Settings				5, 6		nCK
Supported CWL Settings				5		nCK

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