Unbuffered SODIMM

datasheet

Rev. 1.0

DDR3 SDRAM

[ Table 16 ] DDR3-1600 Speed Bins

Speed

 

 

DDR3-1600

 

 

CL-nRCD-nRP

 

 

11-11-11

Units

NOTE

Parameter

 

Symbol

min

 

max

 

 

Internal read command to first data

 

tAA

13.75

 

20

ns

 

 

(13.125)8

 

 

 

 

 

 

 

 

 

 

ACT to internal read or write delay time

tRCD

13.75

 

-

ns

 

(13.125)8

 

 

 

 

 

 

 

 

 

 

PRE command period

 

tRP

13.75

 

-

ns

 

 

(13.125)8

 

 

 

 

 

 

 

 

 

 

ACT to ACT or REF command period

tRC

48.75

 

-

ns

 

(48.125)8

 

 

 

 

 

 

 

 

 

 

ACT to PRE command period

 

tRAS

35

 

9*tREFI

ns

 

 

 

 

 

 

 

 

 

 

CL = 5

 

CWL = 5

tCK(AVG)

3.0

 

3.3

ns

1,2,3,4,7,9,10

 

 

 

 

 

 

 

 

 

CWL = 6,7,8

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CWL = 5

tCK(AVG)

2.5

 

3.3

ns

1,2,3,7

 

 

 

 

 

 

 

 

 

CL = 6

 

CWL = 6

tCK(AVG)

 

Reserved

ns

1,2,3,4,7

 

 

 

 

 

 

 

 

 

 

CWL = 7, 8

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

 

 

 

CWL = 5

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

 

 

CL = 7

 

CWL = 6

tCK(AVG)

1.875

 

<2.5

ns

1,2,3,4,7

 

 

 

 

 

 

 

 

 

CWL = 7

tCK(AVG)

 

Reserved

ns

1,2,3,4,7

 

 

 

 

 

 

 

 

 

 

 

 

 

CWL = 8

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

 

 

 

CWL = 5

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

 

 

CL = 8

 

CWL = 6

tCK(AVG)

1.875

 

<2.5

ns

1,2,3,7

 

 

 

 

 

 

 

 

 

CWL = 7

tCK(AVG)

 

Reserved

ns

1,2,3,4,7

 

 

 

 

 

 

 

 

 

 

 

 

 

CWL = 8

tCK(AVG)

 

Reserved

ns

1,2,3,4

 

 

 

 

 

 

 

 

 

 

CWL = 5,6

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

 

 

CL = 9

 

CWL = 7

tCK(AVG)

1.5

 

<1.875

ns

1,2,3,4,7

 

 

 

 

 

 

 

 

 

 

 

CWL = 8

tCK(AVG)

 

Reserved

ns

1,2,3,4

 

 

 

 

 

 

 

 

 

 

CWL = 5,6

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

 

 

CL = 10

 

CWL = 7

tCK(AVG)

1.5

 

<1.875

ns

1,2,3,7

 

 

 

 

 

 

 

 

 

 

 

CWL = 8

tCK(AVG)

 

Reserved

ns

1,2,3,4

 

 

 

 

 

 

 

 

CL = 11

 

CWL = 5,6,7

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

 

 

CWL = 8

tCK(AVG)

1.25

 

<1.5

ns

1,2,3,8

 

 

 

 

 

 

 

 

 

 

 

 

Supported CL Settings

 

 

 

5,6,7,8,9,10,11

nCK

 

 

 

 

 

 

 

 

 

 

Supported CWL Settings

 

 

 

5,6,7,8

nCK

 

 

 

 

 

 

 

 

 

 

- 24 -

Page 24
Image 24
Samsung M471B1G73AH0 specifications DDR3-1600 Speed Bins CL-nRCD-nRP

M471B1G73AH0 specifications

The Samsung M471B1G73AH0 is a high-performance DDR4 SO-DIMM memory module designed for laptops and compact systems. This specific RAM chip showcases a balance of speed, efficiency, and reliability, making it an ideal choice for both everyday users and professionals seeking enhanced system performance.

One of the main features of the M471B1G73AH0 is its capacity. With 8GB of memory, it provides ample space for multitasking, allowing users to run multiple applications simultaneously without experiencing slowdowns. This is particularly beneficial for users who require a robust performance for tasks such as video editing, gaming, or running virtual machines.

The module operates at a frequency of 2400 MHz, tapping into the capabilities of DDR4 technology. This frequency ensures that data can be transferred quickly, enhancing overall system responsiveness. The DDR4 specification also brings improvements in power efficiency compared to its predecessor, DDR3, resulting in lower energy consumption and prolonged battery life in portable devices.

Another notable aspect of the M471B1G73AH0 is its latency. With a CAS latency of CL17, this module strikes a good balance between speed and response time, ensuring that data retrieval and execution are efficient, which is crucial for both applications and system processes.

Samsung’s advanced manufacturing technology is evident in this module, which employs 20nm process technology to produce high-density chips. This not only contributes to lower power consumption but also results in a smaller physical footprint, allowing for increased memory density in compact devices.

In terms of compatibility, the M471B1G73AH0 is designed to support a wide range of platforms. It adheres to the standard SO-DIMM form factor, making it compatible with most laptops and all-in-one systems. This versatility allows users to easily upgrade their existing systems for enhanced performance.

Additionally, the module includes features such as ECC (Error-Correcting Code) capabilities for certain variants, which helps in identifying and correcting memory errors, thereby increasing system reliability—an essential aspect for critical applications.

In conclusion, the Samsung M471B1G73AH0 is a robust DDR4 memory solution that delivers solid performance and reliability. With its 8GB capacity, 2400 MHz frequency, and energy-efficient design, it is suitable for a wide range of computing needs, making it a popular choice among users looking to upgrade their systems for improved efficiency and responsiveness.