Unbuffered SODIMM

datasheet

Rev. 1.0

DDR3 SDRAM

8. Absolute Maximum Ratings

8.1 Absolute Maximum DC Ratings

Symbol

Parameter

Rating

Units

NOTE

VDD

Voltage on VDD pin relative to VSS

-0.4 V ~ 1.975 V

V

1,3

VDDQ

Voltage on VDDQ pin relative to VSS

-0.4 V ~ 1.975 V

V

1,3

VIN, VOUT

Voltage on any pin relative to VSS

-0.4 V ~ 1.975 V

V

1

TSTG

Storage Temperature

-55 to +100

°C

1, 2

NOTE :

1.Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2.Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.

3.VDD and VDDQ must be within 300mV of each other at all times;and VREF must be not greater than 0.6 x VDDQ, When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.

8.2 DRAM Component Operating Temperature Range

Symbol

Parameter

rating

Unit

NOTE

TOPER

Operating Temperature Range

0 to 95

°C

1, 2, 3

NOTE :

1.Operating Temperature TOPER is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the JEDEC document JESD51-2.

2.The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main- tained between 0-85°C under all operating conditions

3.Some applications require operation of the Extended Temperature Range between 85°C and 95°C case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:

a)Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us. It is also possible to specify a component with 1X refresh (tREFI to 7.8us) in the Extended Temperature Range.

b)If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b), in this case IDD6 current can be increased around 10~20% than normal Temperature range.

9. AC & DC Operating Conditions

9.1 Recommended DC Operating Conditions (SSTL-15)

Symbol

Parameter

 

Rating

 

Units

NOTE

Min.

Typ.

Max.

 

 

 

 

VDD

Supply Voltage

1.425

1.5

1.575

V

1,2

VDDQ

Supply Voltage for Output

1.425

1.5

1.575

V

1,2

NOTE:

1.Under all conditions VDDQ must be less than or equal to VDD.

2.VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

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Samsung M471B1G73AH0 specifications Absolute Maximum Ratings, AC & DC Operating Conditions, Absolute Maximum DC Ratings
Page 8 Page 10

M471B1G73AH0 specifications

The Samsung M471B1G73AH0 is a high-performance DDR4 SO-DIMM memory module designed for laptops and compact systems. This specific RAM chip showcases a balance of speed, efficiency, and reliability, making it an ideal choice for both everyday users and professionals seeking enhanced system performance.

One of the main features of the M471B1G73AH0 is its capacity. With 8GB of memory, it provides ample space for multitasking, allowing users to run multiple applications simultaneously without experiencing slowdowns. This is particularly beneficial for users who require a robust performance for tasks such as video editing, gaming, or running virtual machines.

The module operates at a frequency of 2400 MHz, tapping into the capabilities of DDR4 technology. This frequency ensures that data can be transferred quickly, enhancing overall system responsiveness. The DDR4 specification also brings improvements in power efficiency compared to its predecessor, DDR3, resulting in lower energy consumption and prolonged battery life in portable devices.

Another notable aspect of the M471B1G73AH0 is its latency. With a CAS latency of CL17, this module strikes a good balance between speed and response time, ensuring that data retrieval and execution are efficient, which is crucial for both applications and system processes.

Samsung’s advanced manufacturing technology is evident in this module, which employs 20nm process technology to produce high-density chips. This not only contributes to lower power consumption but also results in a smaller physical footprint, allowing for increased memory density in compact devices.

In terms of compatibility, the M471B1G73AH0 is designed to support a wide range of platforms. It adheres to the standard SO-DIMM form factor, making it compatible with most laptops and all-in-one systems. This versatility allows users to easily upgrade their existing systems for enhanced performance.

Additionally, the module includes features such as ECC (Error-Correcting Code) capabilities for certain variants, which helps in identifying and correcting memory errors, thereby increasing system reliability—an essential aspect for critical applications.

In conclusion, the Samsung M471B1G73AH0 is a robust DDR4 memory solution that delivers solid performance and reliability. With its 8GB capacity, 2400 MHz frequency, and energy-efficient design, it is suitable for a wide range of computing needs, making it a popular choice among users looking to upgrade their systems for improved efficiency and responsiveness.
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