Seiko Instruments G1216B1N000 tCYC, Pweh, Pwel, tDSW, tDDR, tDHW, tDHR, 2.0V, 0.8V, CS1, CS2

AN.No.G1216B1N000-3D0E

3.2 Timing Characteristics

Item	Symbol	Min.	Typ.	Max.	unit	Note
E cycle time	tCYC	1000			ns	1, 2
E pulse width (H)	PWEH	450		￿	ns	1, 2
E pulse width (L)	PWEL	450￿			ns	1, 2
E rise time	tr			25	ns	1, 2
E fall time	tf			25	ns	1, 2
Address setup time	tAS	140			ns	1, 2
Address hold time	tAH	10			ns	1, 2
Data setup time	tDSW	200￿			ns	1
Data delay time	tDDR			320￿	ns	2, 3
Data hold time during write	tDHW	10			ns	1
Data hold time during read	tDHR	20	￿		ns	2

Note 1: When the MPU writes: Note 2: When the MPU reads:

			tCYC
E	2.0V	PWEL		PWEH	tf	E	2.0V
	0.8V						0.8V
			tr	tAH
		2.0V	tAS			R / W
R / W
		0.8V
			tAS			tAH
CS1, CS2		2.0V		tDSW		CS1, CS2
D/I		0.8V				D/I

tDHW

tCYC

PWEL		PWEH
		tr
2.0V	tAS
0.8V		tAH
	tAS
		tAH
2.0V
0.8V

tDDR

tf

DB0	to DB7	2.0V	DB0	to DB7	2.4V
		0.8V			0.4V

tDHR

Note 3: Load circuits (DB0 to DB7)

D1 RL

Test point

C	R	D2
		D3

D4

RL = 2.4 k￿

R = 11 k￿

C= 130 pF (including jig capacity) Diodes D1 to D4 are 1S2074 H .

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