Cypress CY7C138, CY7C139 manual Capacitance8, Parameter Description Test Conditions Max Unit

Page 4

CY7C138, CY7C139

Electrical Characteristics Over the Operating Range (continued)

 

 

 

 

 

 

 

 

7C138-35

7C138-55

 

Parameter

Description

 

 

 

 

Test Conditions

7C139-35

7C139-55

Unit

 

 

 

 

 

 

 

 

Min

Max

Min

Max

 

VOH

Output HIGH Voltage

 

VCC = Min., IOH = –4.0 mA

 

2.4

 

2.4

 

V

VOL

Output LOW Voltage

 

VCC = Min., IOL = 4.0 mA

 

 

0.4

 

0.4

V

VIH

 

 

 

 

 

 

 

2.2

 

2.2

 

V

VIL

Input LOW Voltage

 

 

 

 

 

 

 

0.8

 

0.8

V

IIX

Input Leakage Current

 

GND < VI < VCC

 

–10

+10

–10

+10

μA

IOZ

Output Leakage Current

 

Output Disabled, GND < VO < VCC

–10

+10

–10

+10

μA

ICC

Operating Current

 

VCC = Max.,

Commercial

 

160

 

160

mA

 

 

 

IOUT = 0 mA,

 

 

 

 

 

 

 

 

 

Industrial

 

180

 

180

 

 

 

 

Outputs Disabled

 

 

 

 

 

 

ISB1

Standby Current

 

CE

L and

CE

R > VIH,

Commercial

 

30

 

30

mA

 

(Both Ports TTL Levels)

 

f = fMAX[7]

 

 

 

 

 

 

 

 

Industrial

 

40

 

40

 

ISB2

Standby Current

 

CE

L and

CE

R > VIH,

Commercial

 

100

 

100

mA

 

(One Port TTL Level)

 

f = fMAX[7]

 

 

 

 

 

 

 

 

Industrial

 

110

 

110

 

ISB3

Standby Current

 

Both Ports

Commercial

 

15

 

15

mA

 

(Both Ports CMOS Levels)

 

CE and CER > VCC – 0.2V,

 

 

 

 

 

 

 

 

Industrial

 

30

 

30

 

 

 

 

VIN > VCC – 0.2V

 

 

 

 

 

 

 

 

 

or VIN < 0.2V, f = 0[7]

 

 

 

 

 

 

ISB4

Standby Current

 

One Port

Commercial

 

90

 

90

mA

 

(One Port CMOS Level)

 

CEL or CER > VCC – 0.2V,

 

 

 

 

 

 

 

 

Industrial

 

100

 

100

 

 

 

 

VIN > VCC – 0.2V or

 

 

 

 

 

 

 

 

 

VIN < 0.2V, Active

 

 

 

 

 

 

 

 

 

Port Outputs, f = fMAX[7]

 

 

 

 

 

 

Capacitance[8]

 

 

 

 

 

 

 

 

 

 

Parameter

Description

Test Conditions

Max

Unit

 

 

 

 

 

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = 5.0V

 

 

COUT

Output Capacitance

15

pF

 

Document #: 38-06037 Rev. *D

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Contents Features Logic Block DiagramFunctional Description Cypress Semiconductor Corporation 198 Champion CourtPin Configurations Pin Definitions Left Port Right Port DescriptionSelection Guide Description UnitElectrical Characteristics Over the Operating Range TemperatureMaximum Ratings Operating RangeCapacitance8 Parameter Description Test Conditions Max UnitSwitching Characteristics Over the Operating Range9 OutputGND ALL Input PulsesSwitching Waveforms TimingBusy Data OUTData OUT Data Valid Address R MatchData INR Valid Address L Match Data Outl ValidAddress SEM or CE Data Data ValidHigh Impedance AddressValid Address SEMDataout Valid Write Cycle Read CycleAddressr Match Data INR ValidAddressl Match BusylAddress L,R Address Match CEL CER Busyr ADDRESSL,R CER CEL Busy LAddress L Addressr Busyr Address Match Address MismatchRight Side Sets Intl Right Side Clears INT RLeft Side Clears Intl Architecture Write OperationInterrupt Operation Example assumes Non-Contending Read/Write Inputs Outputs OperationRight Port Function Supply Voltage Ambient Temperature C Output Voltage Normalized Supply CurrentOutput Source Current NormalizedPackage Diagram Ordering InformationSpeed Ordering Code Package Type OperatingSales, Solutions and Legal Information Document History

CY7C138, CY7C139 specifications

The Cypress CY7C139 and CY7C138 are advanced static random-access memory (SRAM) components that have garnered attention in the field of digital electronics due to their high performance and reliability. These SRAMs are designed to meet the demanding needs of a variety of applications, ranging from telecommunications to automotive systems and consumer electronics.

The CY7C139 is a 128K x 8 bit static RAM, while the CY7C138 is a 256K x 8 bit SRAM, offering flexible memory solutions for designers. Both devices utilize a fast access time, typically around 10 to 15 nanoseconds, allowing quick data retrieval essential for high-speed applications. This remarkable speed is complemented by low power consumption, making them suitable for battery-operated devices and other applications where efficiency is paramount.

One of the key features of the CY7C139 and CY7C138 is their asynchronous operation, which enables them to provide high-speed data access without the need for a clock signal. This characteristic simplifies system design and enhances performance, as users can write to and read from the memory without waiting for synchronization. The devices support standard CMOS interface levels, which facilitate integration into a diverse range of digital systems.

Additionally, these SRAMs have been designed with a low standby current, making them particularly effective for low-power applications. The devices also include a robust input/output structure that ensures reliable signal integrity under various operating conditions. Their built-in data retention capability allows the SRAMs to retain stored data even during power failures, a critical feature in many systems that require data preservation.

Both CY7C139 and CY7C138 SRAMs support a wide range of temperature and voltage ranges, making them suitable for industrial and automotive environments. They are packaged in industry-standard configurations, allowing for easy integration into existing designs.

In summary, the Cypress CY7C139 and CY7C138 SRAMs provide high-speed, low-power memory solutions suitable for various applications. Their asynchronous operation, low standby current, and robust performance characteristics make them a preferred choice for engineers looking to enhance system efficiency and reliability. These features make the CY7C139 and CY7C138 indispensable components in modern digital electronic designs.