Cypress CY62167EV18 manual Thermal Resistance, Data Retention Characteristics, Vfbga

CY62167EV18 MoBL®

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter	Description	Test Conditions	VFBGA	VFBGA	Unit
			(6 x 7 x 1mm)	(6 x 8 x 1mm)
ΘJA	Thermal Resistance	Still air, soldered on a 3 × 4.5 inch,	27.74	55	°C/W
	(Junction to Ambient)	two-layer printed circuit board
ΘJC	Thermal Resistance		9.84	16	°C/W
	(Junction to Case)

R1

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

	Figure 2. AC Test Loads and Waveforms
	VCC	ALL INPUT PULSES
			90%
	10%	90%		10%
R2	GND			Fall Time = 1 V/ns
	Rise Time = 1 V/ns

Equivalent to: THÉVENIN EQUIVALENT

RTH

OUTPUT V

Parameters	1.8V	Unit
R1	13500	Ω
R2	10800	Ω
RTH	6000	Ω
VTH	0.80	V

Data Retention Characteristics

Over the Operating Range

Parameter

Description

Conditions

Min

Typ[4]

Max

Unit

VDR

VCC for Data Retention

1.0

V

ICCDR[9]

Data Retention Current

VCC = 1.0V,

CE

1 > VCC – 0.2V, CE2 < 0.2V,

10

μA

VIN > VCC – 0.2V or VIN < 0.2V

tCDR[10]

Chip Deselect to Data

0

ns

Retention Time

tR[11]

Operation Recovery Time

tRC

ns

Figure 3. Data Retention Waveform

DATA RETENTION MODE

VCC(min)

VCC

V (min)

V

> 1.0 V

CC

DR

tCDR

tR

1 or

CE

.

[12]

BHE

BLE

or

CE2

Notes

10.Tested initially and after any design or process changes that may affect these parameters.

11.Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.

12.BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling both BHE and BLE.

Document #: 38-05447 Rev. *G Page 4 of 13

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