Cypress CY62157E manual Document History, REV ECN no, Issue Date Orig. Description of Change

Page 12

CY62157E MoBL®

Document History Page

Document Title: CY62157E MoBL®, 8-Mbit (512K x 16) Static RAM

Document Number: 38-05695

REV.

ECN NO.

Issue Date

Orig. of

Description of Change

Change

 

 

 

 

 

**

291273

See ECN

PCI

New data sheet

 

 

 

 

 

*A

457689

See ECN

NXR

Added Automotive Product

 

 

 

 

Removed Industrial Product

 

 

 

 

Removed 35 ns and 45 ns speed bins

 

 

 

 

Removed “L” bin

 

 

 

 

Updated AC Test Loads table

 

 

 

 

Corrected tR in Data Retention Characteristics from 100 s to tRC ns

 

 

 

 

Updated the Ordering Information and replaced the Package Name column

 

 

 

 

with Package Diagram

*B

467033

See ECN

NXR

Added Industrial Product (Final Information)

 

 

 

 

Removed 48 ball VFBGA package and its relevant information

 

 

 

 

Changed the ICC(typ) value of Automotive from 2 mA to 1.8 mA for f = 1MHz

 

 

 

 

Changed the ISB2(typ) value of Automotive from 5 A to 1.8 A

 

 

 

 

Modified footnote #4 to include current limit

 

 

 

 

Updated the Ordering Information table

*C

569114

See ECN

VKN

Added 48 ball VFBGA package

 

 

 

 

Updated Logic Block Diagram

 

 

 

 

Added footnote #3

 

 

 

 

Updated the Ordering Information table

Document #: 38-05695 Rev. *C

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationProduct Portfolio Tsop VfbgaElectrical Characteristics Over the Operating Range Maximum RatingsOperating Range Capacitance9Data Retention Characteristics Over the Operating Range Thermal Resistance9AC Test Loads and Waveforms Data Retention Waveform11Switching Characteristics Over the Operating Range 45 ns 55 ns Parameter Description MinMin Max Unit Read Cycle Write CycleSwitching Waveforms Read Cycle 1 Address Transition Controlled16Read Cycle 2 OE Controlled17 50%Write Cycle 1 WE Controlled 15, 19, 20 Write Cycle 2 CE 1 or CE 2 Controlled 15, 19, 20Write Cycle 3 WE Controlled, OE LOW20 Write Cycle 4 BHE/BLE Controlled, OE LOW20Inputs/Outputs Mode Power Truth TableOrdering Information BHE BLEPackage Diagrams Pin Tsop IIBall Vfbga 6 x 8 x 1 mm Issue Date Orig. Description of Change Document HistoryREV ECN no