Cypress CY62157E manual Write Cycle 3 WE Controlled, OE LOW20

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CY62157E MoBL®

Write Cycle 3 (WE Controlled, OE LOW)[20, 21]

Document #: 38-05695 Rev. *C

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationProduct Portfolio Tsop VfbgaElectrical Characteristics Over the Operating Range Maximum RatingsOperating Range Capacitance9Data Retention Characteristics Over the Operating Range Thermal Resistance9AC Test Loads and Waveforms Data Retention Waveform11Switching Characteristics Over the Operating Range 45 ns 55 ns Parameter Description MinMin Max Unit Read Cycle Write CycleSwitching Waveforms Read Cycle 1 Address Transition Controlled16Read Cycle 2 OE Controlled17 50%Write Cycle 1 WE Controlled 15, 19, 20 Write Cycle 2 CE 1 or CE 2 Controlled 15, 19, 20Write Cycle 3 WE Controlled, OE LOW20 Write Cycle 4 BHE/BLE Controlled, OE LOW20Inputs/Outputs Mode Power Truth TableOrdering Information BHE BLEPackage Diagrams Pin Tsop IIBall Vfbga 6 x 8 x 1 mm REV ECN no Issue Date Orig. Description of ChangeDocument History