Cypress CY62157CV30 manual Truth Table, Write Cycle No BHE/BLE Controlled, OE LOW19, Bhe Ble

Page 10

CY62157CV30/33

Switching Waveforms (continued)

Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[19]

 

 

tWC

 

ADDRESS

 

 

 

CE1

 

 

 

CE2

 

tSCE

 

 

 

 

 

tAW

 

tHA

BHE/BLE

 

tBW

 

 

 

 

 

tSA

 

 

WE

 

tPWE

 

 

 

tSD

tHD

DATA I/O

NOTE 20

DATAIN VALID

 

Truth Table

CE1

CE2

WE

OE

BHE

BLE

Inputs/Outputs

Mode

Power

H

X

X

X

X

X

High Z

Deselect/Power-Down

Standby (ISB)

X

L

X

X

X

X

High Z

Deselect/Power-Down

Standby (ISB)

X

X

X

X

H

H

High Z

Deselect/Power-Down

Standby (ISB)

L

H

H

L

L

L

Data Out (I/OO–I/O15)

Read

Active (ICC)

L

H

H

L

H

L

Data Out (I/OO–I/O7);

Read

Active (ICC)

 

 

 

 

 

 

I/O8–I/O15in High Z

 

 

L

H

H

L

L

H

Data Out (I/O8–I/O15);

Read

Active (ICC)

 

 

 

 

 

 

I/O0–I/O7in High Z

 

 

L

H

H

H

L

L

High Z

Output Disabled

Active (ICC)

L

H

H

H

H

L

High Z

Output Disabled

Active (ICC)

L

H

H

H

L

H

High Z

Output Disabled

Active (ICC)

L

H

L

X

L

L

Data In (I/OO–I/O15)

Write

Active (ICC)

L

H

L

X

H

L

Data In (I/OO–I/O7);

Write

Active (ICC)

 

 

 

 

 

 

I/O8–I/O15in High Z

 

 

L

H

L

X

L

H

Data In (I/O8–I/O15);

Write

Active (ICC)

 

 

 

 

 

 

I/O0–I/O7in High Z

 

 

Document #: 38-05014 Rev. *F

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Contents Functional Description1 FeaturesLogic Block Diagram Cypress Semiconductor CorporationProduct Portfolio Pin Configurations2, 3Pin Definitions Operating Range Electrical Characteristics Over the Operating RangeMaximum Ratings Ambient Device RangeParameter Description Test Conditions Thermal Resistance7Fbga AC Test Loads and Waveforms Data Retention Characteristics Over the Operating RangeCapacitance7 Data Retention Waveform970 ns Parameter Description Unit Min Max Read Cycle Switching Characteristics Over the Operating RangeWrite Cycle Read Cycle No Address Transition Controlled15 Switching WaveformsRead Cycle No OE Controlled16 Write Cycle No WE Controlled14, 18 Data I/O Data in ValidWrite Cycle No CE1 or CE2 Controlled 14, 18 Write Cycle No WE Controlled, OE LOW19Write Cycle No BHE/BLE Controlled, OE LOW19 Inputs/Outputs Mode PowerTruth Table BHE BLETypical DC and AC Characteristics Operating Current vs. Supply VoltageOrdering Information Package DiagramBall 6 mm x 10 mm x 1.2 mm Fbga Document History Issue Date Orig. Description of ChangeREV ECN no

CY62157CV33, CY62157CV30 specifications

The Cypress CY62157CV30 and CY62157CV33 are high-performance synchronous static RAMs (SRAMs) designed for a wide range of applications in data storage and processing. These devices are notable for their speed, low power consumption, and versatility, making them ideal for use in systems where quick data access and high reliability are essential.

One of the main features of the CY62157CV30 and CY62157CV33 is their advanced synchronous operation. These SRAMs support a clock frequency of up to 100 MHz, allowing for high-speed data access and efficient performance in time-critical applications. With a 16K x 8-bit memory organization, these devices provide ample storage capacity, suitable for various applications ranging from telecommunications to consumer electronics.

The CY62157CV30 and CY62157CV33 utilize a 3.0V to 3.6V operating voltage range, making them well-suited for low-voltage applications. This low-voltage operation contributes to reduced power consumption, allowing for longer battery life in portable devices. The SRAMs are also designed with a low standby current, further enhancing their efficiency and making them optimal for systems that require prolonged periods of inactivity without significant power drain.

Another significant characteristic of these SRAM devices is their compatibility with various standard bus protocols, including asynchronous and synchronous data transfer methods. This adaptability ensures that they can be seamlessly integrated into different system architectures, offering designers flexibility in their hardware configurations.

The CY62157CV30 and CY62157CV33 feature a simple interface that allows for easy control and management of memory operations. They support both read and write operations and can be utilized in a variety of configurations depending on the system requirements. Additionally, these SRAMs provide excellent data retention characteristics, ensuring reliable data storage even in the event of power loss.

In summary, the Cypress CY62157CV30 and CY62157CV33 synchronous SRAMs offer a compelling combination of high speed, low power consumption, and adaptability. Their advanced features and technologies make them suitable for diverse applications in industries such as automotive, telecommunications, and consumer electronics. With their impressive performance characteristics, these SRAMs continue to meet the growing demands for efficient and reliable memory solutions in modern electronic systems.