Cypress CY62157CV33 manual Maximum Ratings, Electrical Characteristics Over the Operating Range

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CY62157CV30/33

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground Potential ...

–0.5V to Vccmax + 0.5V

DC Voltage Applied to Outputs

 

 

 

in High-Z State[5]

–0.5V to V

CC

+ 0.3V

DC Input Voltage[5]

 

CC

+ 0.3V

 

 

 

Output Current into Outputs (LOW)

 

20 mA

Electrical Characteristics Over the Operating Range

Static Discharge Voltage

> 2001V

(per MIL-STD-883, Method 3015)

 

 

Latch-up Current

...................................................

> 200 mA

Operating Range

 

 

 

 

 

 

 

 

 

 

Ambient

 

 

Device

Range

Temperature

V

 

[T ][6]

CC

 

 

A

 

CY62157CV30 Automotive-E –40°C to +125°C 2.7V – 3.3V

CY62157CV33 Automotive-A –40°C to +85°C 3.0V – 3.6V

Automotive-E –40°C to +125°C

 

 

 

 

 

 

 

 

CY62157CV30-70

 

Parameter

Description

 

 

 

Test Conditions

 

 

 

Unit

 

 

 

Min.

Typ.[2]

Max.

VOH

Output HIGH Voltage

 

IOH = –1.0 mA

 

VCC = 2.7V

2.4

 

 

V

VOL

Output LOW Voltage

IOL = 2.1 mA

 

VCC = 2.7V

 

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

 

 

 

2.2

 

VCC + 0.3V

V

VIL

Input LOW Voltage

 

 

 

 

 

 

–0.3

 

0.8

V

IIX

Input Leakage

 

GND < VI < VCC

 

 

–10

 

+10

A

 

Current

 

 

 

 

 

 

 

 

 

 

IOZ

Output Leakage

 

GND < VO < VCC, Output Disabled

–10

 

+10

A

 

Current

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

 

f = fMAX = 1/tRC

 

VCC = 3.3V

 

7

15

mA

 

Supply

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

f = 1 MHz

 

 

 

1.5

3

 

 

Current

 

 

 

 

 

CMOS Levels

 

 

 

 

ISB1

Automatic CE

 

 

1 > VCC – 0.2V or CE2

< 0.2V

 

8

70

A

 

CE

 

 

Power-Down

 

VIN > VCC

– 0.2V or VIN < 0.2V,

 

 

 

 

 

Current— CMOS

 

f = fmax (Address and Data Only),

 

 

 

 

 

Inputs

 

f = 0 (OE, WE, BHE and BLE)

 

 

 

 

ISB2

Automatic CE

 

 

1 > VCC – 0.2V or CE2

< 0.2V

 

8

70

A

 

CE

 

 

Power-Down

 

VIN > VCC

– 0.2V or VIN < 0.2V,

 

 

 

 

 

Current—CMOS

 

f = 0, VCC

= 3.3V

 

 

 

 

 

 

 

Inputs

 

 

 

 

 

 

 

 

 

 

Notes:

5.VIL(min.) = –2.0V for pulse durations less than 20 ns.

6.TA is the “Instant-On” case temperature.

Document #: 38-05014 Rev. *F

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional Description1Pin Configurations2, 3 Product PortfolioPin Definitions Ambient Device Range Electrical Characteristics Over the Operating RangeMaximum Ratings Operating RangeThermal Resistance7 Parameter Description Test ConditionsFbga Data Retention Waveform9 Data Retention Characteristics Over the Operating RangeCapacitance7 AC Test Loads and WaveformsSwitching Characteristics Over the Operating Range 70 ns Parameter Description Unit Min Max Read CycleWrite Cycle Switching Waveforms Read Cycle No Address Transition Controlled15Read Cycle No OE Controlled16 Data I/O Data in Valid Write Cycle No WE Controlled14, 18Write Cycle No WE Controlled, OE LOW19 Write Cycle No CE1 or CE2 Controlled 14, 18BHE BLE Inputs/Outputs Mode PowerTruth Table Write Cycle No BHE/BLE Controlled, OE LOW19Operating Current vs. Supply Voltage Typical DC and AC CharacteristicsPackage Diagram Ordering InformationBall 6 mm x 10 mm x 1.2 mm Fbga Issue Date Orig. Description of Change Document HistoryREV ECN no

CY62157CV33, CY62157CV30 specifications

The Cypress CY62157CV30 and CY62157CV33 are high-performance synchronous static RAMs (SRAMs) designed for a wide range of applications in data storage and processing. These devices are notable for their speed, low power consumption, and versatility, making them ideal for use in systems where quick data access and high reliability are essential.

One of the main features of the CY62157CV30 and CY62157CV33 is their advanced synchronous operation. These SRAMs support a clock frequency of up to 100 MHz, allowing for high-speed data access and efficient performance in time-critical applications. With a 16K x 8-bit memory organization, these devices provide ample storage capacity, suitable for various applications ranging from telecommunications to consumer electronics.

The CY62157CV30 and CY62157CV33 utilize a 3.0V to 3.6V operating voltage range, making them well-suited for low-voltage applications. This low-voltage operation contributes to reduced power consumption, allowing for longer battery life in portable devices. The SRAMs are also designed with a low standby current, further enhancing their efficiency and making them optimal for systems that require prolonged periods of inactivity without significant power drain.

Another significant characteristic of these SRAM devices is their compatibility with various standard bus protocols, including asynchronous and synchronous data transfer methods. This adaptability ensures that they can be seamlessly integrated into different system architectures, offering designers flexibility in their hardware configurations.

The CY62157CV30 and CY62157CV33 feature a simple interface that allows for easy control and management of memory operations. They support both read and write operations and can be utilized in a variety of configurations depending on the system requirements. Additionally, these SRAMs provide excellent data retention characteristics, ensuring reliable data storage even in the event of power loss.

In summary, the Cypress CY62157CV30 and CY62157CV33 synchronous SRAMs offer a compelling combination of high speed, low power consumption, and adaptability. Their advanced features and technologies make them suitable for diverse applications in industries such as automotive, telecommunications, and consumer electronics. With their impressive performance characteristics, these SRAMs continue to meet the growing demands for efficient and reliable memory solutions in modern electronic systems.