Cypress CY62157CV30, CY62157CV33 manual Write Cycle No WE Controlled14, 18, Data I/O Data in Valid

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CY62157CV30/33

Switching Waveforms (continued)

Write Cycle No. 1 (WE Controlled)[14, 18, 19]

 

 

tWC

 

ADDRESS

 

 

 

 

 

tSCE

 

CE1

 

 

 

CE2

 

 

 

 

tAW

 

tHA

 

tSA

tPWE

 

WE

 

 

 

BHE/BLE

 

tBW

 

OE

 

 

 

 

 

tSD

t

 

 

 

HD

DATA I/O

NOTE 20

DATAIN VALID

 

 

tHZOE

 

 

Notes:

 

 

 

18.Data I/O is high-impedance if OE = VIH.

19.If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in a high-impedance state.

20.During this period, the I/Os are in output state and input signals should not be applied.

Document #: 38-05014 Rev. *F

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationPin Definitions Pin Configurations2, 3Product Portfolio Electrical Characteristics Over the Operating Range Maximum RatingsOperating Range Ambient Device RangeFbga Thermal Resistance7Parameter Description Test Conditions Data Retention Characteristics Over the Operating Range Capacitance7AC Test Loads and Waveforms Data Retention Waveform9Write Cycle Switching Characteristics Over the Operating Range70 ns Parameter Description Unit Min Max Read Cycle Read Cycle No OE Controlled16 Switching WaveformsRead Cycle No Address Transition Controlled15 Write Cycle No WE Controlled14, 18 Data I/O Data in ValidWrite Cycle No CE1 or CE2 Controlled 14, 18 Write Cycle No WE Controlled, OE LOW19Inputs/Outputs Mode Power Truth TableWrite Cycle No BHE/BLE Controlled, OE LOW19 BHE BLETypical DC and AC Characteristics Operating Current vs. Supply VoltageBall 6 mm x 10 mm x 1.2 mm Fbga Package DiagramOrdering Information REV ECN no Issue Date Orig. Description of ChangeDocument History

CY62157CV33, CY62157CV30 specifications

The Cypress CY62157CV30 and CY62157CV33 are high-performance synchronous static RAMs (SRAMs) designed for a wide range of applications in data storage and processing. These devices are notable for their speed, low power consumption, and versatility, making them ideal for use in systems where quick data access and high reliability are essential.

One of the main features of the CY62157CV30 and CY62157CV33 is their advanced synchronous operation. These SRAMs support a clock frequency of up to 100 MHz, allowing for high-speed data access and efficient performance in time-critical applications. With a 16K x 8-bit memory organization, these devices provide ample storage capacity, suitable for various applications ranging from telecommunications to consumer electronics.

The CY62157CV30 and CY62157CV33 utilize a 3.0V to 3.6V operating voltage range, making them well-suited for low-voltage applications. This low-voltage operation contributes to reduced power consumption, allowing for longer battery life in portable devices. The SRAMs are also designed with a low standby current, further enhancing their efficiency and making them optimal for systems that require prolonged periods of inactivity without significant power drain.

Another significant characteristic of these SRAM devices is their compatibility with various standard bus protocols, including asynchronous and synchronous data transfer methods. This adaptability ensures that they can be seamlessly integrated into different system architectures, offering designers flexibility in their hardware configurations.

The CY62157CV30 and CY62157CV33 feature a simple interface that allows for easy control and management of memory operations. They support both read and write operations and can be utilized in a variety of configurations depending on the system requirements. Additionally, these SRAMs provide excellent data retention characteristics, ensuring reliable data storage even in the event of power loss.

In summary, the Cypress CY62157CV30 and CY62157CV33 synchronous SRAMs offer a compelling combination of high speed, low power consumption, and adaptability. Their advanced features and technologies make them suitable for diverse applications in industries such as automotive, telecommunications, and consumer electronics. With their impressive performance characteristics, these SRAMs continue to meet the growing demands for efficient and reliable memory solutions in modern electronic systems.
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