Cypress CY62157CV33 manual Switching Waveforms, Read Cycle No Address Transition Controlled15

Page 7

CY62157CV30/33

Switching Waveforms

Read Cycle No. 1 (Address Transition Controlled)[15, 16]

ADDRESS

tOHA

tRC

tAA

DATA OUT

PREVIOUS DATA VALID

DATA VALID

Read Cycle No. 2 (OE Controlled)[16, 17]

ADDRESS

 

 

 

 

 

tRC

 

CE1

 

 

 

CE2

tACE

 

 

 

 

 

OE

 

tHZBE

 

 

 

 

BHE/BLE

 

 

 

 

tLZBE

tHZOE

 

 

tDOE

tHZCE

 

 

tLZOE

HIGH

DATA OUT

HIGH IMPEDANCE

DATA VALID

IMPEDANCE

 

 

 

tLZCE

tPD

 

VCC

tPU

ICC

SUPPLY

50%

 

50%

CURRENT

 

 

ISB

Notes:

15.Device is continuously selected. OE, CE1 = VIL, BHE and/or BLE = VIL, CE2 = VIH.

16.WE is HIGH for Read cycle.

17.Address valid prior to or coincident with CE1, BHE, BLE transition LOW and CE2 transition HIGH.

Document #: 38-05014 Rev. *F

Page 7 of 13

[+] Feedback

Image 7
Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Functional Description1Product Portfolio Pin Configurations2, 3Pin Definitions Ambient Device Range Electrical Characteristics Over the Operating RangeMaximum Ratings Operating RangeParameter Description Test Conditions Thermal Resistance7Fbga Data Retention Waveform9 Data Retention Characteristics Over the Operating RangeCapacitance7 AC Test Loads and Waveforms70 ns Parameter Description Unit Min Max Read Cycle Switching Characteristics Over the Operating RangeWrite Cycle Read Cycle No Address Transition Controlled15 Switching WaveformsRead Cycle No OE Controlled16 Data I/O Data in Valid Write Cycle No WE Controlled14, 18Write Cycle No WE Controlled, OE LOW19 Write Cycle No CE1 or CE2 Controlled 14, 18BHE BLE Inputs/Outputs Mode PowerTruth Table Write Cycle No BHE/BLE Controlled, OE LOW19Operating Current vs. Supply Voltage Typical DC and AC CharacteristicsOrdering Information Package DiagramBall 6 mm x 10 mm x 1.2 mm Fbga Document History Issue Date Orig. Description of ChangeREV ECN no

CY62157CV33, CY62157CV30 specifications

The Cypress CY62157CV30 and CY62157CV33 are high-performance synchronous static RAMs (SRAMs) designed for a wide range of applications in data storage and processing. These devices are notable for their speed, low power consumption, and versatility, making them ideal for use in systems where quick data access and high reliability are essential.

One of the main features of the CY62157CV30 and CY62157CV33 is their advanced synchronous operation. These SRAMs support a clock frequency of up to 100 MHz, allowing for high-speed data access and efficient performance in time-critical applications. With a 16K x 8-bit memory organization, these devices provide ample storage capacity, suitable for various applications ranging from telecommunications to consumer electronics.

The CY62157CV30 and CY62157CV33 utilize a 3.0V to 3.6V operating voltage range, making them well-suited for low-voltage applications. This low-voltage operation contributes to reduced power consumption, allowing for longer battery life in portable devices. The SRAMs are also designed with a low standby current, further enhancing their efficiency and making them optimal for systems that require prolonged periods of inactivity without significant power drain.

Another significant characteristic of these SRAM devices is their compatibility with various standard bus protocols, including asynchronous and synchronous data transfer methods. This adaptability ensures that they can be seamlessly integrated into different system architectures, offering designers flexibility in their hardware configurations.

The CY62157CV30 and CY62157CV33 feature a simple interface that allows for easy control and management of memory operations. They support both read and write operations and can be utilized in a variety of configurations depending on the system requirements. Additionally, these SRAMs provide excellent data retention characteristics, ensuring reliable data storage even in the event of power loss.

In summary, the Cypress CY62157CV30 and CY62157CV33 synchronous SRAMs offer a compelling combination of high speed, low power consumption, and adaptability. Their advanced features and technologies make them suitable for diverse applications in industries such as automotive, telecommunications, and consumer electronics. With their impressive performance characteristics, these SRAMs continue to meet the growing demands for efficient and reliable memory solutions in modern electronic systems.