Cypress CY62157CV30, CY62157CV33 manual Product Portfolio, Pin Configurations2, 3, Pin Definitions

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CY62157CV30/33

Product Portfolio

 

 

 

 

 

 

 

 

 

 

Power Dissipation

 

 

 

 

 

 

 

 

 

 

 

 

Operating

(ICC) mA

 

Standby (I )

 

 

V

CC

Range

 

f = 1 MHz

f = f

max

∝A

SB2

 

 

 

 

 

 

 

 

 

 

 

 

 

Product

Range

Min.

 

Typ.[2]

 

Max.

Typ.[2]

Max.

Typ.[2]

Max.

Typ.[2]

 

Max.

CY62157CV30

Automotive-E

2.7V

 

3.0V

 

3.3V

1.5

3

7

15

8

 

70

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY62157CV33

Automotive-A

3.0V

 

3.3V

 

3.6V

1.5

3

5.5

12

10

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Automotive-E

 

 

 

 

 

 

1.5

3

7

15

10

 

80

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Configurations[2, 3, 4]

FBGA (Top View)

1

2

3

4

5

6

 

BLE

OE

A0

A1

A2

CE2

A

I/O8

BHE

A3

A4

CE1

I/O0

B

I/O9

I/O10

A5

A6

I/O1

I/O2

C

V

I/O

A17

A

I/O

VCC

D

SS

11

7

3

 

VCC

I/O

DNU

A16

I/O

VSS

E

 

12

 

 

4

 

 

I/O14

I/O13

A14

A15

I/O5

I/O6

F

I/O

NC

A

A13

WE

I/O

G

15

 

12

 

 

7

 

A18

A8

A9

A10

A11

NC

H

Pin Definitions

Name

 

 

 

 

Definition

 

 

 

Input

 

A0-A18. Address Inputs

Input/Output

 

I/O0-I/O15. Data lines. Used as input or output lines depending on operation

Input/Control

 

 

 

 

. Write Enable, Active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is

 

WE

 

 

conducted.

Input/Control

 

 

1. Chip Enable 1, Active LOW.

 

CE

Input/Control

 

CE2. Chip Enable 2, Active HIGH.

Input/Control

 

 

 

. Output Enable, Active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as

 

OE

 

 

outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins

Ground

 

Vss. Ground for the device

 

 

 

Power Supply

 

Vcc. Power supply for the device

 

 

 

 

 

 

Notes:

2.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.

3.NC pins are not connected on the die.

4.E3 (DNU) can be left as NC or VSS to ensure proper application.

Document #: 38-05014 Rev. *F

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Contents Functional Description1 FeaturesLogic Block Diagram Cypress Semiconductor CorporationPin Definitions Pin Configurations2, 3Product Portfolio Operating Range Electrical Characteristics Over the Operating RangeMaximum Ratings Ambient Device RangeFbga Thermal Resistance7Parameter Description Test Conditions AC Test Loads and Waveforms Data Retention Characteristics Over the Operating RangeCapacitance7 Data Retention Waveform9Write Cycle Switching Characteristics Over the Operating Range70 ns Parameter Description Unit Min Max Read Cycle Read Cycle No OE Controlled16 Switching WaveformsRead Cycle No Address Transition Controlled15 Write Cycle No WE Controlled14, 18 Data I/O Data in ValidWrite Cycle No CE1 or CE2 Controlled 14, 18 Write Cycle No WE Controlled, OE LOW19Write Cycle No BHE/BLE Controlled, OE LOW19 Inputs/Outputs Mode PowerTruth Table BHE BLETypical DC and AC Characteristics Operating Current vs. Supply VoltageBall 6 mm x 10 mm x 1.2 mm Fbga Package DiagramOrdering Information REV ECN no Issue Date Orig. Description of ChangeDocument History

CY62157CV33, CY62157CV30 specifications

The Cypress CY62157CV30 and CY62157CV33 are high-performance synchronous static RAMs (SRAMs) designed for a wide range of applications in data storage and processing. These devices are notable for their speed, low power consumption, and versatility, making them ideal for use in systems where quick data access and high reliability are essential.

One of the main features of the CY62157CV30 and CY62157CV33 is their advanced synchronous operation. These SRAMs support a clock frequency of up to 100 MHz, allowing for high-speed data access and efficient performance in time-critical applications. With a 16K x 8-bit memory organization, these devices provide ample storage capacity, suitable for various applications ranging from telecommunications to consumer electronics.

The CY62157CV30 and CY62157CV33 utilize a 3.0V to 3.6V operating voltage range, making them well-suited for low-voltage applications. This low-voltage operation contributes to reduced power consumption, allowing for longer battery life in portable devices. The SRAMs are also designed with a low standby current, further enhancing their efficiency and making them optimal for systems that require prolonged periods of inactivity without significant power drain.

Another significant characteristic of these SRAM devices is their compatibility with various standard bus protocols, including asynchronous and synchronous data transfer methods. This adaptability ensures that they can be seamlessly integrated into different system architectures, offering designers flexibility in their hardware configurations.

The CY62157CV30 and CY62157CV33 feature a simple interface that allows for easy control and management of memory operations. They support both read and write operations and can be utilized in a variety of configurations depending on the system requirements. Additionally, these SRAMs provide excellent data retention characteristics, ensuring reliable data storage even in the event of power loss.

In summary, the Cypress CY62157CV30 and CY62157CV33 synchronous SRAMs offer a compelling combination of high speed, low power consumption, and adaptability. Their advanced features and technologies make them suitable for diverse applications in industries such as automotive, telecommunications, and consumer electronics. With their impressive performance characteristics, these SRAMs continue to meet the growing demands for efficient and reliable memory solutions in modern electronic systems.
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