Cypress CY62157CV30, CY62157CV33 Thermal Resistance7, Parameter Description Test Conditions, Fbga

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CY62157CV30/33

Electrical Characteristics Over the Operating Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY62157CV33-70

 

Parameter

Description

 

 

 

 

 

 

 

 

Test Conditions

 

 

 

 

Unit

 

 

 

 

 

 

 

 

 

Min.

Typ.[2]

Max.

VOH

Output HIGH

 

IOH = –1.0 mA

 

 

2.4

 

 

V

 

Voltage

 

VCC = 3.0V

 

 

 

 

 

 

VOL

Output LOW

 

IOL = 2.1 mA

 

 

 

 

0.4

V

 

Voltage

 

VCC = 3.0V

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.2

 

VCC + 0.3V

V

VIL

Input LOW Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

–0.3

 

0.8

V

IIX

Input Leakage

 

GND < VI < VCC

 

Auto-A

–1

 

+1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Auto-E

–10

 

+10

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Output Leakage

 

GND < VO < VCC, Output Disabled

Auto-A

–1

 

+1

A

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Auto-E

–10

 

+10

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

 

f = fMAX = 1/tRC

VCC = 3.6V

Auto-A

 

5.5

12

mA

 

Supply

 

 

 

 

 

 

 

 

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Auto-E

 

7

15

 

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

CMOS Levels

 

 

 

 

 

f = 1 MHz

 

Auto-A/

 

1.5

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Auto-E

 

 

 

 

ISB1

Automatic CE

 

 

1

> VCC – 0.2V or

 

Auto-A

 

10

30

A

CE

 

 

 

Power-Down

 

CE2

< 0.2V

 

 

 

 

 

 

 

 

 

Auto-E

 

10

80

A

 

Current—CMOS

 

VIN > VCC – 0.2V or

 

 

 

 

 

 

 

Inputs

 

VIN < 0.2V,

 

 

 

 

 

 

 

 

 

f = fmax (Address and Data

 

 

 

 

 

 

 

 

 

Only),

 

 

 

 

 

 

 

 

 

f = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(OE,WE,BHE,and BLE)

 

 

 

 

 

 

ISB2

Automatic CE

 

 

1

> VCC – 0.2V or

 

Auto-A

 

10

30

A

CE

 

 

 

Power-Down

 

CE2

< 0.2V

 

 

 

 

 

 

 

 

 

Auto-E

 

10

80

A

 

Current—CMOS

 

VIN > VCC – 0.2V or

 

 

 

 

 

 

 

Inputs

 

VIN < 0.2V,

 

 

 

 

 

 

 

 

 

f = 0, VCC = 3.6V

 

 

 

 

 

 

Thermal Resistance[7]

Parameter

Description

Test Conditions

FBGA

Unit

ΘJA

Thermal Resistance

Still Air, soldered on a 3 x 4.5 inch, two-layer printed

55

°C/W

 

(Junction to Ambient)

circuit board

 

 

ΘJC

Thermal Resistance

 

16

°C/W

 

(Junction to Case)

 

 

 

Note:

7. Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05014 Rev. *F

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Contents Features Logic Block DiagramFunctional Description1 Cypress Semiconductor CorporationProduct Portfolio Pin Configurations2, 3Pin Definitions Electrical Characteristics Over the Operating Range Maximum RatingsOperating Range Ambient Device RangeParameter Description Test Conditions Thermal Resistance7Fbga Data Retention Characteristics Over the Operating Range Capacitance7AC Test Loads and Waveforms Data Retention Waveform970 ns Parameter Description Unit Min Max Read Cycle Switching Characteristics Over the Operating RangeWrite Cycle Read Cycle No Address Transition Controlled15 Switching WaveformsRead Cycle No OE Controlled16 Write Cycle No WE Controlled14, 18 Data I/O Data in ValidWrite Cycle No CE1 or CE2 Controlled 14, 18 Write Cycle No WE Controlled, OE LOW19Inputs/Outputs Mode Power Truth TableWrite Cycle No BHE/BLE Controlled, OE LOW19 BHE BLETypical DC and AC Characteristics Operating Current vs. Supply VoltageOrdering Information Package DiagramBall 6 mm x 10 mm x 1.2 mm Fbga Document History Issue Date Orig. Description of ChangeREV ECN no

CY62157CV33, CY62157CV30 specifications

The Cypress CY62157CV30 and CY62157CV33 are high-performance synchronous static RAMs (SRAMs) designed for a wide range of applications in data storage and processing. These devices are notable for their speed, low power consumption, and versatility, making them ideal for use in systems where quick data access and high reliability are essential.

One of the main features of the CY62157CV30 and CY62157CV33 is their advanced synchronous operation. These SRAMs support a clock frequency of up to 100 MHz, allowing for high-speed data access and efficient performance in time-critical applications. With a 16K x 8-bit memory organization, these devices provide ample storage capacity, suitable for various applications ranging from telecommunications to consumer electronics.

The CY62157CV30 and CY62157CV33 utilize a 3.0V to 3.6V operating voltage range, making them well-suited for low-voltage applications. This low-voltage operation contributes to reduced power consumption, allowing for longer battery life in portable devices. The SRAMs are also designed with a low standby current, further enhancing their efficiency and making them optimal for systems that require prolonged periods of inactivity without significant power drain.

Another significant characteristic of these SRAM devices is their compatibility with various standard bus protocols, including asynchronous and synchronous data transfer methods. This adaptability ensures that they can be seamlessly integrated into different system architectures, offering designers flexibility in their hardware configurations.

The CY62157CV30 and CY62157CV33 feature a simple interface that allows for easy control and management of memory operations. They support both read and write operations and can be utilized in a variety of configurations depending on the system requirements. Additionally, these SRAMs provide excellent data retention characteristics, ensuring reliable data storage even in the event of power loss.

In summary, the Cypress CY62157CV30 and CY62157CV33 synchronous SRAMs offer a compelling combination of high speed, low power consumption, and adaptability. Their advanced features and technologies make them suitable for diverse applications in industries such as automotive, telecommunications, and consumer electronics. With their impressive performance characteristics, these SRAMs continue to meet the growing demands for efficient and reliable memory solutions in modern electronic systems.