Cypress CY62157CV33, CY62157CV30 manual Write Cycle No CE1 or CE2 Controlled 14, 18

Page 9

CY62157CV30/33

Switching Waveforms (continued)

Write Cycle No. 2 (CE1 or CE2 Controlled) [14, 18, 19]

 

 

tWC

 

ADDRESS

 

 

 

 

 

tSCE

 

CE1

 

 

 

CE2

 

 

 

 

tSA

 

tHA

 

tAW

 

WE

 

tPWE

 

 

 

 

BHE/BLE

 

tBW

 

OE

 

 

 

 

 

tSD

t

 

 

 

HD

DATA I/O

NOTE 20

DATAIN VALID

 

 

tHZOE

 

 

Write Cycle No. 3 (WE Controlled, OE LOW)[19]

 

 

tWC

 

ADDRESS

 

 

 

 

 

tSCE

 

CE1

 

 

 

CE2

 

 

 

BHE/BLE

 

tBW

 

 

tAW

 

tHA

 

tSA

tPWE

 

WE

 

 

 

 

 

tSD

tHD

DATAI/O

NOTE 20

DATAIN VALID

 

 

tHZWE

 

tLZWE

Document #: 38-05014 Rev. *F

 

Page 9 of 13

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationPin Configurations2, 3 Product PortfolioPin Definitions Maximum Ratings Electrical Characteristics Over the Operating RangeOperating Range Ambient Device RangeThermal Resistance7 Parameter Description Test ConditionsFbga Capacitance7 Data Retention Characteristics Over the Operating RangeAC Test Loads and Waveforms Data Retention Waveform9Switching Characteristics Over the Operating Range 70 ns Parameter Description Unit Min Max Read CycleWrite Cycle Switching Waveforms Read Cycle No Address Transition Controlled15Read Cycle No OE Controlled16 Data I/O Data in Valid Write Cycle No WE Controlled14, 18Write Cycle No WE Controlled, OE LOW19 Write Cycle No CE1 or CE2 Controlled 14, 18Truth Table Inputs/Outputs Mode PowerWrite Cycle No BHE/BLE Controlled, OE LOW19 BHE BLEOperating Current vs. Supply Voltage Typical DC and AC CharacteristicsPackage Diagram Ordering InformationBall 6 mm x 10 mm x 1.2 mm Fbga Issue Date Orig. Description of Change Document HistoryREV ECN no

CY62157CV33, CY62157CV30 specifications

The Cypress CY62157CV30 and CY62157CV33 are high-performance synchronous static RAMs (SRAMs) designed for a wide range of applications in data storage and processing. These devices are notable for their speed, low power consumption, and versatility, making them ideal for use in systems where quick data access and high reliability are essential.

One of the main features of the CY62157CV30 and CY62157CV33 is their advanced synchronous operation. These SRAMs support a clock frequency of up to 100 MHz, allowing for high-speed data access and efficient performance in time-critical applications. With a 16K x 8-bit memory organization, these devices provide ample storage capacity, suitable for various applications ranging from telecommunications to consumer electronics.

The CY62157CV30 and CY62157CV33 utilize a 3.0V to 3.6V operating voltage range, making them well-suited for low-voltage applications. This low-voltage operation contributes to reduced power consumption, allowing for longer battery life in portable devices. The SRAMs are also designed with a low standby current, further enhancing their efficiency and making them optimal for systems that require prolonged periods of inactivity without significant power drain.

Another significant characteristic of these SRAM devices is their compatibility with various standard bus protocols, including asynchronous and synchronous data transfer methods. This adaptability ensures that they can be seamlessly integrated into different system architectures, offering designers flexibility in their hardware configurations.

The CY62157CV30 and CY62157CV33 feature a simple interface that allows for easy control and management of memory operations. They support both read and write operations and can be utilized in a variety of configurations depending on the system requirements. Additionally, these SRAMs provide excellent data retention characteristics, ensuring reliable data storage even in the event of power loss.

In summary, the Cypress CY62157CV30 and CY62157CV33 synchronous SRAMs offer a compelling combination of high speed, low power consumption, and adaptability. Their advanced features and technologies make them suitable for diverse applications in industries such as automotive, telecommunications, and consumer electronics. With their impressive performance characteristics, these SRAMs continue to meet the growing demands for efficient and reliable memory solutions in modern electronic systems.