Cypress CY62157CV33 manual Document History, REV ECN no, Issue Date Orig. Description of Change

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CY62157CV30/33

Document History Page

Document Title: CY62157CV30/33 512K x 16 Static RAM

Document Number: 38-05014

REV.

ECN NO.

Issue Date

Orig. of

Description of Change

Change

 

 

 

 

 

**

106184

05/10/01

HRT/MGN

New data sheet – Advance Information

 

 

 

 

 

*A

107241

07/24/01

MGN

Made corrections to Advance Information

 

 

 

 

Added 55 ns bin

*B

109621

03/11/02

MGN

Changed from Advance Information to Final

 

 

 

 

 

*C

114218

05/01/02

GUG/MGN

Improved Typical and Max ICC values

*D

238448

See ECN

AJU

Added Automotive Product Information

 

 

 

 

 

*E

269729

See ECN

SYT

Added Automotive Product information for CY62157CV30 – 70 ns

 

 

 

 

Added IIX and IOZ values for Automotive range of CY62157CV33 – 70 ns

*F

498575

See ECN

NXR

Removed Industrial Operating Range

 

 

 

 

Removed 55 ns speed bin

 

 

 

 

Removed CY62157CV25 part number from the Product Offering

 

 

 

 

Added Automotive-A operating range

 

 

 

 

Updated the Ordering Information Table

Document #: 38-05014 Rev. *F

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Contents Logic Block Diagram FeaturesFunctional Description1 Cypress Semiconductor CorporationProduct Portfolio Pin Configurations2, 3Pin Definitions Maximum Ratings Electrical Characteristics Over the Operating RangeOperating Range Ambient Device RangeParameter Description Test Conditions Thermal Resistance7Fbga Capacitance7 Data Retention Characteristics Over the Operating RangeAC Test Loads and Waveforms Data Retention Waveform970 ns Parameter Description Unit Min Max Read Cycle Switching Characteristics Over the Operating RangeWrite Cycle Read Cycle No Address Transition Controlled15 Switching WaveformsRead Cycle No OE Controlled16 Data I/O Data in Valid Write Cycle No WE Controlled14, 18Write Cycle No WE Controlled, OE LOW19 Write Cycle No CE1 or CE2 Controlled 14, 18Truth Table Inputs/Outputs Mode PowerWrite Cycle No BHE/BLE Controlled, OE LOW19 BHE BLEOperating Current vs. Supply Voltage Typical DC and AC CharacteristicsOrdering Information Package DiagramBall 6 mm x 10 mm x 1.2 mm Fbga Document History Issue Date Orig. Description of ChangeREV ECN no

CY62157CV33, CY62157CV30 specifications

The Cypress CY62157CV30 and CY62157CV33 are high-performance synchronous static RAMs (SRAMs) designed for a wide range of applications in data storage and processing. These devices are notable for their speed, low power consumption, and versatility, making them ideal for use in systems where quick data access and high reliability are essential.

One of the main features of the CY62157CV30 and CY62157CV33 is their advanced synchronous operation. These SRAMs support a clock frequency of up to 100 MHz, allowing for high-speed data access and efficient performance in time-critical applications. With a 16K x 8-bit memory organization, these devices provide ample storage capacity, suitable for various applications ranging from telecommunications to consumer electronics.

The CY62157CV30 and CY62157CV33 utilize a 3.0V to 3.6V operating voltage range, making them well-suited for low-voltage applications. This low-voltage operation contributes to reduced power consumption, allowing for longer battery life in portable devices. The SRAMs are also designed with a low standby current, further enhancing their efficiency and making them optimal for systems that require prolonged periods of inactivity without significant power drain.

Another significant characteristic of these SRAM devices is their compatibility with various standard bus protocols, including asynchronous and synchronous data transfer methods. This adaptability ensures that they can be seamlessly integrated into different system architectures, offering designers flexibility in their hardware configurations.

The CY62157CV30 and CY62157CV33 feature a simple interface that allows for easy control and management of memory operations. They support both read and write operations and can be utilized in a variety of configurations depending on the system requirements. Additionally, these SRAMs provide excellent data retention characteristics, ensuring reliable data storage even in the event of power loss.

In summary, the Cypress CY62157CV30 and CY62157CV33 synchronous SRAMs offer a compelling combination of high speed, low power consumption, and adaptability. Their advanced features and technologies make them suitable for diverse applications in industries such as automotive, telecommunications, and consumer electronics. With their impressive performance characteristics, these SRAMs continue to meet the growing demands for efficient and reliable memory solutions in modern electronic systems.