Cypress CY14B101Q1, CY14B101Q3 manual Features, Functional Overview, Logic Block Diagram

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CY14B101Q1

CY14B101Q2

PRELIMINARYCY14B101Q3

1 Mbit (128K x 8) Serial SPI nvSRAM

Features

1 Mbit NonVolatile SRAM

Internally organized as 128K x 8

STORE to QuantumTrap® nonvolatile elements initiated au- tomatically on power down (AutoStore®) or by user using HSB pin (Hardware Store) or SPI instruction (Software Store)

RECALL to SRAM initiated on power up (Power Up Recall®) or by SPI Instruction (Software RECALL)

Automatic STORE on power down with a small capacitor

High Reliability

Infinite Read, Write, and RECALLl cycles

200,000 STORE cycles to QuantumTrap

Data Retention: 20 Years

High Speed Serial Peripheral Interface (SPI)

40 MHz Clock rate

Supports SPI Modes 0 (0,0) and 3 (1,1)

Write Protection

Hardware Protection using Write Protect (WP) Pin

Software Protection using Write Disable Instruction

Software Block Protection for 1/4,1/2, or entire Array

Low Power Consumption

Single 3V +20%, –10% operation

Average Vcc current of 10 mA at 40 MHz operation

Industry Standard Configurations

Commercial and industrial temperatures

CY14B101Q1 has identical pin configuration to industry stan- dard 8-pin NV Memory

8-pin DFN and 16-pin SOIC Packages

RoHS compliant

Functional Overview

The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1 Mbit nonvolatile static RAM with a nonvolatile element in each memory cell. The memory is organized as 128K words of 8 bits each. The embedded nonvolatile elements incor- porate the QuantumTrap technology, creating the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the QuantumTrap cell provides highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). Both STORE and RECALL operations can also be triggered by the user.

Logic Block Diagram

 

 

 

 

VCC

VCAP

 

CS

 

 

Quantum Trap

Power Control

 

Instruction decode

128K X 8

 

 

 

WP

 

 

 

 

 

Write protect

 

 

 

 

 

 

SCK

Control logic

 

SRAM ARRAY

STORE

STORE/RECALL

HSB

HOLD

 

 

 

Control

 

 

128K X 8

RECALL

 

 

 

 

 

 

 

 

 

Instruction

 

D0-D7

 

 

 

 

 

register

 

 

 

 

 

 

 

Address

A0-A16

 

 

 

 

 

 

 

 

 

 

 

 

 

Decoder

 

 

 

 

 

 

SI

 

 

Data I/O register

 

 

 

SO

 

 

 

Status register

 

 

 

 

Cypress Semiconductor Corporation • 198 Champion Court

San Jose, CA 95134-1709

408-943-2600

Document #: 001-50091 Rev. *A

 

Revised February 2, 2009

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Contents Logic Block Diagram FeaturesFunctional Overview Mbit NonVolatile Sram Internally organized as 128K xPin Definitions Pin Name Type Description PinoutsHold Sram Write Device OperationSram Read Store OperationSoftware Store Operation Hardware Recall Power UpHardware Store and HSB pin Operation Recall OperationSPI Overview Serial Peripheral InterfaceSPI Modes System Configuration Using SPI nvSRAMSPI Functional Description SPI Operating FeaturesRead Status Register Rdsr Instruction Status RegisterWrite Status Register Wrsr Instruction Write Disable Wrdi Instruction Write Enable Wren InstructionWrite Protection and Block Protection Block ProtectionWrite Protect WP Pin Memory AccessRead Sequence Read Write Sequence WriteSoftware Store NvSRAM Special InstructionsNvSRAM Special Instructions Function Name Opcode Operation AutoStore Enable Asenb AutoStore Disable AsdisbHold Pin Operation Maximum Ratings DC Electrical CharacteristicsOperating Range Parameter Description Test Conditions Min Max UnitCapacitance Data Retention and EnduranceThermal Resistance AC Test ConditionsCypress Alt Description 40MHz Unit Parameter Min Max AC Switching CharacteristicsSwitching Waveforms AutoStore or Power Up RecallParameters Description CY‘4B101QxA Unit Min Max Parameter Description CY14B101Q1 Unit Min Max Software Controlled Store and Recall CyclesRecall Duration 200 Soft Sequence Processing Time 100Hardware Store Cycle To Output Active Time when write latch not setParameter Description CY14B101Q1 Unit Min Hardware Store Pulse WidthOrdering Information Ordering Code Package Package Type Operating Diagram RangePart Numbering Nomenclature CY 14 B 101 Q 1-SF X C TPin 300 mil DFN Package Package DiagramsPin 300 mil Soic Worldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History REV ECN no