Cypress CY14B101Q3 Write Protection and Block Protection, Write Enable Wren Instruction, BP1 BP0

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CY14B101Q1

CY14B101Q2

PRELIMINARYCY14B101Q3

Figure 8. Write Status Register (WRSR) Instruction Timing

CS

0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7

SCK

 

 

 

Opcode

 

 

 

 

 

 

 

Data in

 

 

SI

0

0

0

0

0

0

0

1

D7

0

0

0

D3 D2

0

0

 

 

 

 

 

 

 

 

 

MSB

 

 

 

 

 

LSB

SOHI-Z

Write Protection and Block Protection

CY14B101Q1/CY14B101Q2/CY14B101Q3 provides features for both software and hardware write protection using WRDI instruction and WP. Additionally, this device also provides block protection mechanism through BP0 and BP1 pins of the Status Register.

The write enable and disable status of the device is indicated by WEN bit of the status register. The write instructions (WRSR and WRITE) and nvSRAM special instruction (STORE, RECALL, ASENB, and ASDISB) need the write to be enabled (WEN bit = 1) before they can be issued.

Write Enable (WREN) Instruction

On power up, the device is always in the write disable state. The following WRITE, WRSR, or nvSRAM special instruction must therefore be preceded by a Write Enable instruction. If the device is not write enabled (WEN = ‘0’), it ignores the write instructions and returns to the standby state when CS is brought HIGH. A new CS falling edge is required to re-initiate serial communi- cation. The instruction is issued following the falling edge of CS. When this instruction is used, the WEN bit of status register is set to ‘1’. WEN bit defaults to ‘0’ on power up.

Note After completion of a write instruction (WRSR or WRITE) or nvSRAM special instruction (STORE, RECALL, ASENB, and ASDISB) instruction, WEN bit is cleared to ‘0’. This is done to provide protection from any inadvertent writes. Therefore, WREN instruction needs to be used before a new write instruction is issued.

Figure 9. WREN Instruction

CS

 

 

 

 

 

 

 

 

 

0

1

2

3

4

5

6

7

SCK

 

 

 

 

 

 

 

 

SI

0

0

0

0

0

1

1

0

SO

 

 

 

Hi-Z

 

 

 

 

 

 

 

 

 

 

 

Write Disable (WRDI) Instruction

Write Disable instruction disables the write by clearing the WEN bit to ‘0’ in order to protect the device against inadvertent writes. This instruction is issued following falling edge of CS followed by opcode for WRDI instruction. The WEN bit is cleared on the rising edge of CS following a WRDI instruction.

Figure 10. WRDI Instruction

CS

 

 

 

 

 

 

 

 

 

0

1

2

3

4

5

6

7

SCK

 

 

 

 

 

 

 

 

SI

0

0

0

0

0

1

0

0

SO

 

 

 

Hi-Z

 

 

 

 

 

 

 

 

 

 

 

Block Protection

Block protection is provided using the BP0 and BP1 pins of the Status register. These bits can be set using WRSR instruction and probed using the RDSR instruction. The nvSRAM is divided into four array segments. One-quarter, one-half, or all of the memory segments can be protected. Any data within the protected segment is read only. Table 6 shows the function of Block Protect bits.

Table 6. Block Write Protect Bits

 

Status Register

 

Level

 

Bits

Array Addresses Protected

 

BP1

 

BP0

 

0

0

 

0

None

 

 

 

 

 

1 (1/4)

0

 

1

0x18000-0x1FFFF

 

 

 

 

 

2 (1/2)

1

 

0

0x10000-0x1FFFF

 

 

 

 

 

3 (All)

1

 

1

0x00000-0x1FFFF

 

 

 

 

 

Document #: 001-50091 Rev. *A

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Contents Logic Block Diagram FeaturesFunctional Overview Mbit NonVolatile Sram Internally organized as 128K xPinouts Pin Definitions Pin Name Type DescriptionHold Sram Write Device OperationSram Read Store OperationSoftware Store Operation Hardware Recall Power UpHardware Store and HSB pin Operation Recall OperationSPI Overview Serial Peripheral InterfaceSPI Modes System Configuration Using SPI nvSRAMSPI Functional Description SPI Operating FeaturesStatus Register Read Status Register Rdsr InstructionWrite Status Register Wrsr Instruction Write Disable Wrdi Instruction Write Enable Wren InstructionWrite Protection and Block Protection Block ProtectionWrite Protect WP Pin Memory AccessRead Sequence Read Write Sequence WriteNvSRAM Special Instructions Software StoreNvSRAM Special Instructions Function Name Opcode Operation AutoStore Disable Asdisb AutoStore Enable AsenbHold Pin Operation Maximum Ratings DC Electrical CharacteristicsOperating Range Parameter Description Test Conditions Min Max UnitCapacitance Data Retention and EnduranceThermal Resistance AC Test ConditionsCypress Alt Description 40MHz Unit Parameter Min Max AC Switching CharacteristicsAutoStore or Power Up Recall Switching WaveformsParameters Description CY‘4B101QxA Unit Min Max Parameter Description CY14B101Q1 Unit Min Max Software Controlled Store and Recall CyclesRecall Duration 200 Soft Sequence Processing Time 100Hardware Store Cycle To Output Active Time when write latch not setParameter Description CY14B101Q1 Unit Min Hardware Store Pulse WidthOrdering Information Ordering Code Package Package Type Operating Diagram RangePart Numbering Nomenclature CY 14 B 101 Q 1-SF X C TPin 300 mil DFN Package Package DiagramsPin 300 mil Soic Worldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History REV ECN no