Cypress CY14B101Q2 manual Data Retention and Endurance, Capacitance, Thermal Resistance, Soic DFN

Page 14

 

 

 

 

 

CY14B101Q1

 

 

 

 

 

 

 

 

 

PRELIMINARY

CY14B101Q2

 

 

 

 

CY14B101Q3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Data Retention and Endurance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

 

 

Description

Min

 

Unit

DATAR

Data Retention

 

20

 

 

Years

NVC

Nonvolatile STORE Operations

200

 

K

Capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter[6]

Description

Test Conditions

Max

 

Unit

CIN

Input Capacitance

TA = 25°C, f = 1MHz,

6

 

 

pF

 

 

VCC = 3.0V

 

 

 

 

COUT

Output Pin Capacitance

8

 

 

pF

Thermal Resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter [6]

Description

Test Conditions

8-SOIC

 

8-DFN

Unit

ΘJA

Thermal Resistance

Test conditions follow standard test

TBD

 

TBD

°C/W

 

(Junction to Ambient)

methods and procedures for measuring

 

 

 

 

 

 

 

thermal impedance, per EIA / JESD51.

 

 

 

 

ΘJC

Thermal Resistance

TBD

 

TBD

°C/W

 

(Junction to Case)

 

 

 

 

 

 

 

 

 

Figure 20. AC Test Loads and Waveforms

 

 

 

 

 

577Ω

3.0V

R1

OUTPUT

30 pF

 

3.0V

 

 

 

 

OUTPUT

R2

5 pF

789Ω

577Ω

R1

R2 789Ω

AC Test Conditions

Input Pulse Levels

0V to 3V

Input Rise and Fall Times (10% - 90%)

<3 ns

Input and Output Timing Reference Levels

1.5V

Note

6. These parameters are guaranteed by design and are not tested.

Document #: 001-50091 Rev. *A

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Contents Functional Overview FeaturesLogic Block Diagram Mbit NonVolatile Sram Internally organized as 128K xHold PinoutsPin Definitions Pin Name Type Description Sram Read Device OperationSram Write Store OperationHardware Store and HSB pin Operation Hardware Recall Power UpSoftware Store Operation Recall OperationSerial Peripheral Interface SPI OverviewSystem Configuration Using SPI nvSRAM SPI ModesSPI Operating Features SPI Functional DescriptionWrite Status Register Wrsr Instruction Status RegisterRead Status Register Rdsr Instruction Write Protection and Block Protection Write Enable Wren InstructionWrite Disable Wrdi Instruction Block ProtectionRead Sequence Read Memory AccessWrite Protect WP Pin Write Sequence WriteNvSRAM Special Instructions Function Name Opcode Operation NvSRAM Special InstructionsSoftware Store Hold Pin Operation AutoStore Disable AsdisbAutoStore Enable Asenb Operating Range DC Electrical CharacteristicsMaximum Ratings Parameter Description Test Conditions Min Max UnitThermal Resistance Data Retention and EnduranceCapacitance AC Test ConditionsAC Switching Characteristics Cypress Alt Description 40MHz Unit Parameter Min MaxParameters Description CY‘4B101QxA Unit Min Max AutoStore or Power Up RecallSwitching Waveforms Recall Duration 200 Software Controlled Store and Recall CyclesParameter Description CY14B101Q1 Unit Min Max Soft Sequence Processing Time 100Parameter Description CY14B101Q1 Unit Min To Output Active Time when write latch not setHardware Store Cycle Hardware Store Pulse WidthPart Numbering Nomenclature Ordering Code Package Package Type Operating Diagram RangeOrdering Information CY 14 B 101 Q 1-SF X C TPackage Diagrams Pin 300 mil DFN PackagePin 300 mil Soic Document History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions REV ECN no