ADVANCE

CY14E108L, CY14E108N

Switching Waveforms (continued)

Figure 8. SRAM Write Cycle #2: CE Controlled[13, 21, 22, 23]

ADDRESS

tSA

CE

WE

BHE , BLE

DATA IN

DATA OUT

tWC

tSCE

tAW

tPWE

tBW

tSD

DATA VALID

HIGH IMPEDANCE

tHA

tHD

Figure 9. AutoStore or Power Up RECALL[24]

 

STORE occurs only

No STORE occurs

VCC

if a SRAM write

without atleast one

has happened

SRAM write

 

VSWITCH

 

tVCCRISE

 

AutoStore

tSTORE

tSTORE

POWER-UP RECALL

tHRECALL

tHRECALL

Read & Write Inhibited

Note

24. Read and Write cycles are ignored during STORE, RECALL, and while VCC is below VSWITCH.

Document Number: 001-45524 Rev. *A

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Cypress CY14B102N, CY14E108N manual Sram Write Cycle #2 CE Controlled13, 21, 22

CY14E108N, CY14B102N specifications

Cypress Semiconductor, a leader in embedded memory solutions, offers a range of non-volatile memory products, among which the CY14B102N and CY14E108N stand out due to their advanced features and robust technology. Both devices are part of Cypress's NVSRAM (Non-Volatile Static Random Access Memory) family, combining the reliability of SRAM with the non-volatility of EEPROM.

The CY14B102N is a 1 Megabit (128 Kilobyte) NVSRAM that utilizes a 2.5V to 3.6V power supply. It features a fast access time of 45 ns, making it suitable for high-speed applications. This device offers a unique advantage by providing data retention for up to 20 years without the need for battery backups, ensuring critical information remains intact even in power-off situations. The CY14B102N also incorporates write cycling endurance rated for over a million cycles, which is ideal for applications requiring frequent data updates.

On the other hand, the CY14E108N features 8 Megabits (1 Megabyte) of NVSRAM, operating at a power supply voltage range of 3.0V to 3.6V. It is designed for higher density applications, while still achieving fast access times of 45 ns. The data retention performance of the CY14E108N similarly allows for up to 20 years of stable data storage under power-off conditions. The device supports a wide range of serial interface protocols, further enhancing its integration capabilities with various microcontrollers and systems.

Both devices implement Cypress's proprietary technology that enables nearly instant data access without requiring a dedicated battery. This makes them suitable for applications in automotive, industrial, consumer, and telecommunications sectors, where maintaining data integrity is critical. The combination of high speed, endurance, and data retention makes the CY14B102N and CY14E108N ideal for systems requiring fast and reliable data storage.

Furthermore, the compatibility of these devices with standard SRAM interfaces ensures seamless integration into existing designs, minimizing design complexity. With their advanced features and reliable performance, Cypress's NVSRAM products provide a compelling solution for high-performance non-volatile memory needs in modern electronic systems.