ADVANCE

CY14E108L, CY14E108N

Table 1. Mode Selection (continued)

 

 

 

 

 

 

 

 

 

A15 - A0

Mode

IO

Power

 

CE

WE

OE

 

L

 

 

H

 

 

L

 

0x4E38

Read SRAM

Output Data

Active ICC2[3,4,5]

 

 

 

 

 

 

 

 

 

0xB1C7

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

0x83E0

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

0x7C1F

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

0x703F

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

0x8FC0

Nonvolatile Store

Output High Z

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

 

 

H

 

 

L

 

0x4E38

Read SRAM

Output Data

Active[3,4,5]

 

 

 

 

 

 

 

 

 

0xB1C7

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

0x83E0

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

0x7C1F

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

0x703F

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

0x4C63

Nonvolatile

Output High Z

 

 

 

 

 

 

 

 

 

 

 

Recall

 

 

Preventing AutoStore

The AutoStore function is disabled by initiating an AutoStore disable sequence. A sequence of read operations is performed in a manner similar to the software STORE initiation. To initiate the AutoStore disable sequence, the following sequence of CE controlled read operations must be performed:

1.Read address 0x4E38 Valid READ

2.Read address 0xB1C7 Valid READ

3.Read address 0x83E0 Valid READ

4.Read address 0x7C1F Valid READ

5.Read address 0x703F Valid READ

6.Read address 0x8B45 AutoStore Disable

The AutoStore is re-enabled by initiating an AutoStore enable sequence. A sequence of read operations is performed in a manner similar to the software RECALL initiation. To initiate the AutoStore enable sequence, the following sequence of CE controlled read operations must be performed:

1.Read address 0x4E38 Valid READ

2.Read address 0xB1C7 Valid READ

3.Read address 0x83E0 Valid READ

4.Read address 0x7C1F Valid READ

5.Read address 0x703F Valid READ

6.Read address 0x4B46 AutoStore Enable

If the AutoStore function is disabled or re-enabled a manual STORE operation (hardware or software) must be issued to save the AutoStore state through subsequent power down cycles. The part comes from the factory with AutoStore enabled.

Data Protection

The CY14E108L/CY14E108N protects data from corruption during low voltage conditions by inhibiting all externally initiated STORE and write operations. The low voltage condition is detected when VCC < VSWITCH. If the CY14E108L/CY14E108N is in a write mode (both CE and WE LOW) at power up, after a RECALL or STORE, the write is inhibited until a negative

transition on CE or WE is detected. This protects against inadvertent writes during power up or brown out conditions.

Noise Considerations

Refer CY Application Note AN1064.

Document Number: 001-45524 Rev. *A

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Cypress CY14B102N, CY14E108N manual Preventing AutoStore, Data Protection, Noise Considerations, Mode Selection A15 A0 Power

CY14E108N, CY14B102N specifications

Cypress Semiconductor, a leader in embedded memory solutions, offers a range of non-volatile memory products, among which the CY14B102N and CY14E108N stand out due to their advanced features and robust technology. Both devices are part of Cypress's NVSRAM (Non-Volatile Static Random Access Memory) family, combining the reliability of SRAM with the non-volatility of EEPROM.

The CY14B102N is a 1 Megabit (128 Kilobyte) NVSRAM that utilizes a 2.5V to 3.6V power supply. It features a fast access time of 45 ns, making it suitable for high-speed applications. This device offers a unique advantage by providing data retention for up to 20 years without the need for battery backups, ensuring critical information remains intact even in power-off situations. The CY14B102N also incorporates write cycling endurance rated for over a million cycles, which is ideal for applications requiring frequent data updates.

On the other hand, the CY14E108N features 8 Megabits (1 Megabyte) of NVSRAM, operating at a power supply voltage range of 3.0V to 3.6V. It is designed for higher density applications, while still achieving fast access times of 45 ns. The data retention performance of the CY14E108N similarly allows for up to 20 years of stable data storage under power-off conditions. The device supports a wide range of serial interface protocols, further enhancing its integration capabilities with various microcontrollers and systems.

Both devices implement Cypress's proprietary technology that enables nearly instant data access without requiring a dedicated battery. This makes them suitable for applications in automotive, industrial, consumer, and telecommunications sectors, where maintaining data integrity is critical. The combination of high speed, endurance, and data retention makes the CY14B102N and CY14E108N ideal for systems requiring fast and reliable data storage.

Furthermore, the compatibility of these devices with standard SRAM interfaces ensures seamless integration into existing designs, minimizing design complexity. With their advanced features and reliable performance, Cypress's NVSRAM products provide a compelling solution for high-performance non-volatile memory needs in modern electronic systems.