ADVANCE

CY14E108L, CY14E108N

Pinouts

 

Figure 1. Pin Diagram - 48 FBGA

48-FBGA

48-FBGA

(x8)

(x16)

Top View

Top View

(not to scale)

(not to scale)

1

2

3

4

5

6

 

NC

OE

A0

A1

A2

NC

A

NC

NC

A3

A4

CE

NC

B

DQ0

NC

A5

A6

NC

DQ4

C

VSS

DQ1

A17

A7

DQ5

VCC

D

VCC

DQ2

VCAP

A16

DQ6

VSS

E

DQ3

NC

A14

A15

NC

DQ7

F

[2]

HSB

A12

A13

WE

NC

G

NC

A18

A8

A9

A10

A11

A19

H

1

2

3

4

5

6

 

BLE

OE

A0

A1

A2

NC

A

DQ8

BHE

A

A

CE

DQ0

B

 

 

3

4

DQ9 DQ10

A5

A6

DQ1

DQ2

C

VSS

DQ11

A17

A7

DQ3

VCC

D

VCC DQ12 VCAP

A16

DQ4

VSS

E

DQ14 DQ13

A14

A15

DQ5

DQ6

F

DQ15 HSB

A12

A13

WE

DQ7

G

A18

A8

A9

A10

A11

[2]

H

NC

Figure 2. Pin Diagram - 44/54 TSOP II

NC

NC[2]

A0

A1

A2

A3

A4

CE DQ0 DQ1

VCC

VSS

DQ2

DQ3

WE A5 A6 A7 A8 A9

NC

NC

1

2

3

4

5

6

7

8

944 - TSOP II

10(x8)

11

12Top View

13(not to scale)

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

HSB

NC

A19 A18

A17

A16

A15

OE

DQ7 DQ6

VSS VCC

DQ5 DQ4

VCAP

A14

A13

A12

A11

A10

NC NC

 

 

NC

 

 

1

 

54

 

 

 

HSB

 

NC[2]

 

 

2

 

53

 

 

 

A18

 

 

 

 

 

 

 

 

 

 

 

 

A0

 

 

3

 

52

 

 

 

A17

 

 

 

 

 

 

 

 

 

 

 

 

A1

 

 

4

 

51

 

 

 

A16

 

 

 

 

 

 

 

 

 

 

 

 

A2

 

 

5

 

50

 

 

 

A15

 

 

 

 

 

 

 

 

 

 

 

 

A3

 

 

6

 

49

 

 

 

OE

 

 

 

 

 

 

 

 

 

 

A4

 

 

7

 

48

 

 

 

BHE

 

 

 

 

 

 

 

 

CE

 

 

 

8

 

47

 

 

 

BLE

 

 

 

 

 

 

 

 

 

 

 

DQ0

 

 

9

 

46

 

 

 

DQ15

 

 

 

 

 

 

 

 

 

 

DQ1

 

 

 

10

54 - TSOP II

45

 

 

 

DQ14

 

 

 

 

DQ2

 

 

11

44

 

 

 

DQ13

 

 

(x16)

 

 

 

DQ3

 

 

 

12

43

 

 

 

DQ12

 

 

 

 

 

 

VCC

 

 

13

Top View

42

 

 

 

VSS

 

 

 

 

 

 

 

 

VSS

 

 

 

14

(not to scale)

41

 

 

 

VCC

 

 

 

 

DQ4

 

 

15

 

40

 

 

 

DQ11

 

 

 

 

DQ5

 

 

16

 

39

 

 

 

DQ10

 

 

 

 

 

 

 

 

 

 

DQ6

 

 

17

 

38

 

 

 

DQ9

 

 

 

 

DQ7

 

 

18

 

37

 

 

 

DQ8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

36

 

 

 

 

 

 

 

 

WE

 

 

 

 

19

 

 

VCAP

 

 

 

 

 

 

 

 

 

 

 

35

 

 

 

 

 

A5

 

 

20

 

 

 

 

A14

 

 

 

 

 

 

 

 

 

34

 

 

 

 

 

A6

 

 

21

 

 

 

 

A13

 

 

 

33

 

 

 

 

 

A7

 

 

22

 

 

 

 

A12

 

 

 

32

 

 

 

 

 

A8

 

 

23

 

 

 

 

A11

 

 

 

 

 

 

 

 

31

 

 

 

 

 

A9

 

 

24

 

 

 

 

A10

 

 

 

 

 

30

 

 

 

 

NC

 

 

25

 

 

 

 

NC

 

NC

 

 

26

 

29

 

 

 

NC

 

 

 

 

 

 

NC

 

27

 

28

 

 

 

NC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note

2. Address expansion for 16 Mbit. NC pin not connected to die.

Document Number: 001-45524 Rev. *A

Page 2 of 20

[+] Feedback

Page 2
Image 2
Cypress CY14B102N, CY14E108N manual Pinouts, X16, Top View Not to scale

CY14E108N, CY14B102N specifications

Cypress Semiconductor, a leader in embedded memory solutions, offers a range of non-volatile memory products, among which the CY14B102N and CY14E108N stand out due to their advanced features and robust technology. Both devices are part of Cypress's NVSRAM (Non-Volatile Static Random Access Memory) family, combining the reliability of SRAM with the non-volatility of EEPROM.

The CY14B102N is a 1 Megabit (128 Kilobyte) NVSRAM that utilizes a 2.5V to 3.6V power supply. It features a fast access time of 45 ns, making it suitable for high-speed applications. This device offers a unique advantage by providing data retention for up to 20 years without the need for battery backups, ensuring critical information remains intact even in power-off situations. The CY14B102N also incorporates write cycling endurance rated for over a million cycles, which is ideal for applications requiring frequent data updates.

On the other hand, the CY14E108N features 8 Megabits (1 Megabyte) of NVSRAM, operating at a power supply voltage range of 3.0V to 3.6V. It is designed for higher density applications, while still achieving fast access times of 45 ns. The data retention performance of the CY14E108N similarly allows for up to 20 years of stable data storage under power-off conditions. The device supports a wide range of serial interface protocols, further enhancing its integration capabilities with various microcontrollers and systems.

Both devices implement Cypress's proprietary technology that enables nearly instant data access without requiring a dedicated battery. This makes them suitable for applications in automotive, industrial, consumer, and telecommunications sectors, where maintaining data integrity is critical. The combination of high speed, endurance, and data retention makes the CY14B102N and CY14E108N ideal for systems requiring fast and reliable data storage.

Furthermore, the compatibility of these devices with standard SRAM interfaces ensures seamless integration into existing designs, minimizing design complexity. With their advanced features and reliable performance, Cypress's NVSRAM products provide a compelling solution for high-performance non-volatile memory needs in modern electronic systems.